APT8043B_SLL_C.PDF

APT8043BLL
APT8043SLL
800V
POWER MOS 7
R
MOSFET
BLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-247
SLL
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
20A 0.430Ω
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8043BLL_SLL
UNIT
800
Volts
Drain-Source Voltage
20
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
PD
TJ,TSTG
1
80
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
20
(Repetitive and Non-Repetitive)
1
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 5A)
TYP
MAX
Volts
0.43
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
7-2004
Characteristic / Test Conditions
050-7056 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT8043BLL_SLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
485
Reverse Transfer Capacitance
f = 1 MHz
80
VGS = 10V
85
VDD = 400V
13
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 20A @ 25°C
tf
5
VDD = 400V
RG = 1.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
5
INDUCTIVE SWITCHING @ 25°C
6
280
VDD = 533V, VGS = 15V
6
ns
25
ID = 20A @ 25°C
Fall Time
nC
9
VGS = 15V
Turn-off Delay Time
pF
55
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
2500
VGS = 0V
3
MAX
ID = 20A, RG = 5Ω
125
INDUCTIVE SWITCHING @ 125°C
460
VDD = 533V, VGS = 15V
ID = 20A, RG = 5Ω
µJ
160
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
20
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -20A, dl S/dt = 100A/µs)
680
ns
Q
Reverse Recovery Charge (IS = -20A, dl S/dt = 100A/µs)
10.6
µC
rr
dv/
dt
Peak Diode Recovery
dv/
80
(Body Diode)
1.3
(VGS = 0V, IS = -20A)
dt
Amps
Volts
10
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.31
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 6.50mH, RG = 25Ω, Peak IL = 20A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID20A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.25
0.7
0.20
0.5
0.15
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7056 Rev C
7-2004
0.35
0.30
0.3
0.10
0.05
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
t1
t2
SINGLE PULSE
0.1
10-4
10-3
°C/W
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
RC MODEL
0.0258
Power
(watts)
0.107
0.177
0.00295F
0.0114F
0.174F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
APT8043BLL_SLL
50
VGS =15 &10 V
40
7.5V
30
7V
20
6.5V
10
6V
Case temperature. (°C)
5.5V
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
40
30
TJ = +125°C
TJ = -55°C
10
0
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
18
16
14
12
10
8
6
4
2
0
25
I
V
D
GS
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
5
10 15
20 25
30 35
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
= 5A
= 10V
1.5
1.0
0.5
0.0
-50
D
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ I = 5A
GS
1.30
1.15
20
2.0
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2004
20
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
050-7056 Rev C
ID, DRAIN CURRENT (AMPERES)
70
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
80
8V
80
5,000
OPERATION HERE
LIMITED BY RDS (ON)
10
100µS
10mS
= 20A
12
VDS=160V
VDS=400V
8
VDS=640V
4
0
500
Coss
100
Crss
0
20
40
60
80
100 120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
D
1,000
10
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
Ciss
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
50
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT8043BLL_SLL
10,000
60
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
45
50
V
40
td(off)
G
J
G
= 5Ω
T = 125°C
J
30
L = 100µH
20
td(on)
5
1000
10
V
DD
G
SWITCHING ENERGY (µJ)
7-2004
20
15
0
15
tr
20
25
30
35
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
= 533V
5
10
V
= 5Ω
I
1000
T = 125°C
800
050-7056 Rev C
25
5
20
25
30
35
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
R
J
L = 100µH
EON includes
diode reverse recovery.
600
Eon
400
Eoff
200
0
tf
10
10
0
L = 100µH
30
= 533V
tr and tf (ns)
DD
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
V
R
= 5Ω
T = 125°C
35
40
= 533V
DD
R
DD
D
15
= 533V
= 20A
Eoff
T = 125°C
J
L = 100µH
E ON includes
800
diode reverse recovery.
600
Eon
400
200
0
5
10
15
20
25
30
35
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT8043BLL_SLL
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
TJ125°C
td(off)
td(on)
tr
90%
90%
10%
0
5%
5%
Drain Voltage
tf
Drain Current
Drain Current
Drain Voltage
10%
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7056 Rev C
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)
7-2004
3.50 (.138)
3.81 (.150)
Similar pages