APT8052BFLL
APT8052SFLL
800V 15A
POWER MOS 7
R
FREDFET
0.520Ω
BFLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT8052BFLL_SFLL
UNIT
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
15
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
298
Watts
Linear Derating Factor
2.38
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
60
-55 to 150
°C
300
Amps
15
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
30
4
mJ
1210
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 7.5A)
TYP
MAX
UNIT
Volts
0.520
Ohms
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
7-2004
Characteristic / Test Conditions
050-7059 Rev B
Symbol
APT8052BFLL_SFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Ciss
Test Conditions
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
3
Total Gate Charge
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
RESISTIVE SWITCHING
VGS = 15V
VDD = 400V
tf
ID = 15A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
215
VDD = 533V, VGS = 15V
90
ID = 15A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
7
RG = 1.6Ω
Eon
UNIT
pF
60
75
11
50
9
6
23
ID = 15A @ 25°C
Turn-off Delay Time
MAX
2035
405
VDD = 400V
Rise Time
td(off)
TYP
VGS = 10V
Qgs
tr
MIN
µJ
420
VDD = 533V VGS = 15V
ID = 15A, RG = 5Ω
110
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
MAX
15
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
1
(Body Diode)
60
Diode Forward Voltage
2
(VGS = 0V, IS = -15A)
1.3
Volts
18
V/ns
Peak Diode Recovery
dt
UNIT
dv/
5
dt
t rr
Reverse Recovery Time
(IS = -15A, di/dt = 100A/µs)
Tj = 25°C
200
Tj = 125°C
350
Q rr
Reverse Recovery Charge
(IS = -15A, di/dt = 100A/µs)
Tj = 25°C
0.69
Tj = 125°C
2.66
IRRM
Peak Recovery Current
(IS = -15A, di/dt = 100A/µs)
Tj = 25°C
8
Tj = 125°C
14
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.42
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.35
0.7
0.25
0.5
0.20
Note:
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7059 Rev B
7-2004
0.45
0.30
0.3
0.10
0
Duty Factor D = t1/t2
0.1
Peak TJ = PDM x ZθJC + TC
0.05
10-5
t1
t2
SINGLE PULSE
0.05
10-4
10-3
°C/W
4 Starting Tj = +25°C, L = 10.76mH, RG = 25Ω, Peak IL = 15A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID15A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.40
UNIT
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT8052BFLL_SFLL
RC MODEL
Junction
temp. (°C)
0.164
0.00592F
Power
(watts)
0.257
0.125F
ID, DRAIN CURRENT (AMPERES)
40
Case temperature. (°C)
35
30
7V
25
6.5V
20
15
6V
10
5.5V
5
5V
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
30
25
20
15
TJ = +125°C
TJ = -55°C
5
0
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
14
12
10
8
6
4
2
0
25
I
V
D
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
5
10
15
20
25
30
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
= 7.5A
GS
= 10V
1.5
1.0
0.5
0.0
-50
D
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ I = 7.5A
GS
1.30
1.15
16
2.0
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
7-2004
10
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
050-7059 Rev B
ID, DRAIN CURRENT (AMPERES)
35
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
40
8V
VGS =15 &10 V
Typical Performance Curves
OPERATION HERE
LIMITED BY RDS (ON)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
100µS
5
1mS
1
10mS
.5
16
I
D
= 15A
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
td(off)
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
30
tf
25
V
DD
R
G
= 5Ω
T = 125°C
J
30
V
= 533V
tr and tf (ns)
40
L = 100µH
20
G
20
= 533V
DD
R
= 5Ω
T = 125°C
J
L = 100µH
15
10
10
5
700
15
20
25
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
R
G
600
0
10
V
15
20
25
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
= 533V
DD
I
D
E ON includes
diode reverse recovery.
Eon
300
200
Eoff
100
0
10
15
20
25
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
J
5
10
V
L = 100µH
400
5
= 5Ω
T = 125°C
500
tr
5
td(on)
0
100
35
50
td(on) and td(off) (ns)
100
10
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
60
SWITCHING ENERGY (µJ)
Coss
TC =+25°C
TJ =+150°C
SINGLE PULSE
20
40
60
80
100
120
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
7-2004
1,000
C, CAPACITANCE (pF)
10
.1
050-7059 Rev B
APT8052BFLL_SFLL
7,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
60
= 533V
= 15A
T = 125°C
800
J
Eoff
L = 100µH
EON includes
diode reverse recovery.
600
Eon
400
200
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT8052BFLL_SFLL
90%
Gate Voltage
10%
TJ125°C
Gate Voltage
td(off)
TJ125°C
td(on)
Drain Voltage
Drain Current
90%
tr
tf
90%
10%
5%
5%
0
Drain Current
Drain Voltage
10%
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF100
ID
V DD
V DS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7059 Rev B
0.46 (.018)
0.56 (.022) {3 Plcs}
7-2004
3.50 (.138)
3.81 (.150)