APT15GN120B_SDQ1(G)_C.pdf

TYPICAL PERFORMANCE CURVES
APT15GN120BD_SDQ1(G)
APT15GN120SDQ1
APT15GN120BDQ1
APT15GN120BDQ1(G)
APT15GN120SDQ1(G)
1200V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
(B)
TO
-2
D3PAK
47
(S)
C
G
G
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
C
E
E
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT15GN120BD_SDQ1(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
45
I C2
Continuous Collector Current @ TC = 110°C
22
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
45
Switching Safe Operating Area @ TJ = 150°C
45A @ 1200V
Total Power Dissipation
Watts
195
Operating and Storage Junction Temperature Range
-55 to 150
°C
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
(VCE = VGE, I C = 600µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
Gate-Emitter Leakage Current (VGE = ±20V)
RGINT
Intergrated Gate Resistor
5.0
5.8
6.5
1.4
1.7
2.1
Units
Volts
2.0
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
I GES
MAX
1200
Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C)
I CES
TYP
200
2
120
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
TBD
nA
Ω
7-2009
V(BR)CES
MIN
Rev C
Characteristic / Test Conditions
050-7598
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT15GN120BD_SDQ1(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Qgc
SSOA
Total Gate Charge
3
Gate-Emitter Charge
TYP
Capacitance
1200
VGE = 0V, VCE = 25V
65
f = 1 MHz
50
Gate Charge
9.0
VGE = 15V
90
VCE = 600V
5
I C = 15A
55
Gate-Collector ("Miller ") Charge
TJ = 150°C, R G = 4.3Ω 7, VGE =
Switching Safe Operating Area
MIN
15V, L = 100µH,VCE = 1200V
Inductive Switching (25°C)
10
tr
Current Rise Time
VCC = 800V
9
td(off)
Turn-off Delay Time
VGE = 15V
150
I C = 15A
110
RG = 4.3Ω 7
410
Eon1
Turn-on Switching Energy
Eon2
Turn-on Switching Energy (Diode)
4
TJ = +25°C
5
Turn-off Switching Energy
td(on)
Turn-on Delay Time
Inductive Switching (125°C)
10
tr
Current Rise Time
VCC = 800V
9
Turn-off Delay Time
VGE = 15V
170
I C = 15A
RG = 4.3Ω 7
185
475
TJ = +125°C
1310
tf
6
44
Turn-on Switching Energy
Eon2
Turn-on Switching Energy (Diode)
Eoff
Turn-off Switching Energy
ns
µJ
950
Current Fall Time
Eon1
nC
730
Eoff
td(off)
V
A
Turn-on Delay Time
Current Fall Time
UNIT
pF
45
td(on)
tf
MAX
55
66
ns
µJ
1300
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case (IGBT)
RθJC
Junction to Case (DIODE)
WT
Package Weight
MIN
TYP
MAX
.64
1.18
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
050-7598
Rev C
7-2009
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT15GN120BD_SDQ1(G)
60
60
GE
= 15V
15V
IC, COLLECTOR CURRENT (A)
50
40
TJ = 125°C
30
TJ = 25°C
20
TJ = -55°C
10
IC, COLLECTOR CURRENT (A)
V
50
13V
40
12V
30
11V
10V
20
9V
10
8V
7V
0
0
0
1
2
3
4
5
6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
TJ = 125°C
30
20
10
0
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.0
IC = 30A
2.5
2.0
IC = 15A
1.5
IC = 7.5A
1.0
0.5
0
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
8
1.00
0.95
0.90
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
8
VCE =960V
6
4
2
0
20
40
60
80
GATE CHARGE (nC)
100
FIGURE 4, Gate Charge
1.10
1.05
VCE = 600V
10
0
4
8
12
16
20
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
VCE = 240V
12
3.0
2.5
IC = 30A
2.0
IC = 15A
1.5
IC = 7.5A
1.0
0.5
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
7-2009
TJ = 25°C
40
J
10
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
Rev C
TJ = -55°C
50
I = 15A
C
T = 25°C
14
050-7598
60
IC, DC COLLECTOR CURRENT(A)
IC, COLLECTOR CURRENT (A)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
70
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
80
0
2
4
6
8
10
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
APT15GN120BD_SDQ1(G)
200
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
12
10
VGE = 15V
8
6
4
VCE = 800V
2 T = 25°C, T =125°C
J
J
0
RG = 4.3Ω
L = 100 µH
180
160
140
VGE =15V,TJ=125°C
120
VGE =15V,TJ=25°C
100
80
60
40
VCE = 800V
20 RG = 4.3Ω
L = 100 µH
0
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
16
300
RG = 4.3Ω, L = 100µH, VCE = 800V
14
5
RG = 4.3Ω, L = 100µH, VCE = 800V
250
tf, FALL TIME (ns)
tr, RISE TIME (ns)
12
10
8
TJ = 25 or 125°C,VGE = 15V
6
200
TJ = 125°C, VGE = 15V
150
100
TJ = 25°C, VGE = 15V
4
50
2
0
0
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3500
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
3000
G
2500
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
TJ = 125°C
2000
1500
1000
500
TJ = 25°C
050-7598
SWITCHING ENERGY LOSSES (µJ)
3000
G
TJ = 125°C
2500
2000
1500
1000
TJ = 25°C
500
0
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
5
10
15
20
25
30
35
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
5000
3500
V
= 800V
CE
V
= +15V
GE
T = 125°C
4500
J
Eon2,30A
4000
Eoff,30A
3500
3000
2500
Eon2,15A
2000
1500
500
0
Eon2,7.5A
Eoff,15A
1000
Eoff,7.5A
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
Rev C
7-2009
0
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
V
= 800V
CE
V
= +15V
GE
R = 4.3Ω
3000
Eoff,30A
G
2500
2000
Eon2,30A
1500
Eoff,15A
1000
Eon2,15A
500
0
Eoff,7.5A
Eon2,7.5A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
Cies
1,000
P
C, CAPACITANCE ( F)
500
100
Coes
50
APT15GN120BD_SDQ1(G)
50
2,000
Cres
45
40
35
30
25
20
15
10
5
10
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
D = 0.9
0.60
0.50
0.7
0.40
0.5
Note:
0.30
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.70
0.3
0.20
SINGLE PULSE
0.10
0
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
10-5
t1
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
100
50
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 4.3Ω
10
6
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
G
5
10
15
20
25
30
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
Rev C
7-2009
0
050-7598
FMAX, OPERATING FREQUENCY (kHz)
140
APT15GN120BD_SDQ1(G)
10%
APT15DQ120
Gate Voltage
TJ = 125°C
td(on)
IC
V CC
90%
V CE
tr
5%
Collector Current
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
td(off)
90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
050-7598
Rev C
7-2009
Figure 23, Turn-off Switching Waveforms and Definitions
TJ = 125°C
TYPICAL PERFORMANCE CURVES
APT15GN120BD_SDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT15GN120BD_SDQ1(G) UNIT
Maximum Average Forward Current (TC = 127°C, Duty Cycle = 0.5)
15
RMS Forward Current (Square wave, 50% duty)
29
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Amps
110
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
MIN
Forward Voltage
TYP
IF = 15A
2.8
IF = 30A
2.4
IF = 15A, TJ = 125°C
MAX
UNIT
Volts
2.45
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F
F
R
J
-
21
trr
Reverse Recovery Time
-
240
Qrr
Reverse Recovery Charge
-
260
-
3
-
290
ns
-
960
nC
-
6
-
130
ns
-
1340
nC
-
19
Amps
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
IF = 15A, diF/dt = -200A/µs
VR = 800V, TC = 25°C
Maximum Reverse Recovery Current
Reverse Recovery Time
IF = 15A, diF/dt = -200A/µs
Reverse Recovery Charge
Maximum Reverse Recovery Current
VR = 800V, TC = 125°C
Reverse Recovery Time
IF = 15A, diF/dt = -1000A/µs
Reverse Recovery Charge
VR = 800V, TC = 125°C
Maximum Reverse Recovery Current
ns
nC
-
-
Amps
Amps
D = 0.9
1.00
0.7
0.80
0.5
0.60
Note:
0.40
PDM
0.3
t1
t2
0.20
SINGLE PULSE
0.1
0.05
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
7-2009
10-4
Rev C
10-5
050-7598
ZθJC, THERMAL IMPEDANCE (°C/W)
1.20
APT15GN120BD_SDQ1(G)
60
400
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
TJ = 175°C
50
TJ = 125°C
40
TJ = 25°C
30
TJ = -55°C
20
10
T = 125°C
J
V = 800V
R
350
30A
300
250
15A
7.5A
200
150
100
50
0
1
2
3
4
5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
2500
T = 125°C
J
V = 800V
R
30A
2000
1500
15A
1000
7.5A
500
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
1.2
trr
15
15A
10
7.5A
5
Duty cycle = 0.5
T = 175°C
J
30
Qrr
20
15
0.4
10
5
0
80
CJ, JUNCTION CAPACITANCE
(pF)
20
25
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
7-2009
30A
R
35
IRRM
0.6
0.0
Rev C
T = 125°C
J
V = 800V
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
1.0
0.8
25
0
Qrr
0.2
050-7598
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
trr
0
IRRM, REVERSE RECOVERY CURRENT
(A)
0
70
60
50
40
30
20
10
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature
TYPICAL PERFORMANCE CURVES
APT15GN120BD_SDQ1(G)
Vr
diF /dt Adjust
+18V
APT10078BLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 33, Diode Reverse Recovery Waveform and Definitions
3
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Collector (Cathode)
(Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
and Leads are Plated
Emitter (Anode)
Collector (Cathode)
Gate
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7598
Rev C
Dimensions in Millimeters and (Inches)
Gate
Collector (Cathode)
Emitter (Anode)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
7-2009
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)
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