TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1(G) 600V APT15GT60BRDQ1 APT15GT60BRDQ1G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 150KHz • Low Tail Current • Ultra Low Leakage Current G C 47 E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT15GT60BRDQ1(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 42 I C2 Continuous Collector Current @ TC = 110°C 20 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 45 Switching Safe Operating Area @ TJ = 150°C 45A @ 600V Total Power Dissipation Watts 184 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES (VCE = VGE, I C = 700µA, Tj = 25°C) 3 TYP 4 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25°C) 1.6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125°C) 2.8 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) MAX 5 Volts 2.5 50 1500 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units µA nA 6-2008 MIN Rev B Characteristic / Test Conditions 052-6284 Symbol DYNAMIC CHARACTERISTICS Symbol APT15GT60BRDQ1(G) Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area td(on) MIN TYP Capacitance 800 VGE = 0V, VCE = 25V 84 f = 1 MHz 52 Gate Charge 7.5 Test Conditions Characteristic VGE = 15V 75 VCE = 300V 6 I C = 15A 34 TJ = 150°C, R G = 10Ω, VGE = 15V, L = 100µH,VCE = 600V tr Current Rise Time VCC = 400V td(off) Turn-off Delay Time VGE = 15V tf Eon1 I C = 15A Current Fall Time Turn-on Switching Energy 4 Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy td(on) Turn-on Delay Time tr Current Rise Time td(off) tf Eon1 RG = 10Ω TJ = +25°C 5 6 VGE = 15V Turn-off Delay Time I C = 15A Current Fall Time Turn-on Switching Energy RG = 10Ω 44 Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 55 TJ = +125°C 6 V nC A 6 8 105 55 150 195 215 Inductive Switching (125°C) VCC = 400V UNIT pF 45 Inductive Switching (25°C) Turn-on Delay Time MAX ns µJ 6 8 125 100 150 325 325 TYP ns µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .68 RθJC Junction to Case (DIODE) 5.9 1.35 WT Package Weight MAX UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6284 Rev B 6-2008 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES TJ = 25°C 25 TJ = 125°C 20 15 10 IC, COLLECTOR CURRENT (A) TJ = -55°C 35 30 25 20 15 TJ = 25°C 10 TJ = 125°C 5 0 0 6V 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125°C) I = 15A C T = 25°C J 14 VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) 0 10 IC = 30A 3.5 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 3.0 2.5 IC = 15A 2.0 1.5 IC = 7.5A 1.0 0.5 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature 70 80 3.5 IC = 30A 3.0 2.5 IC = 15A 2.0 IC = 7.5A 1.5 1.0 0.5 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 60 IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 20 30 40 50 60 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4.0 1.15 7V 20 FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 8V 30 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 9V 40 0 40 10V 50 0 FIGURE 1, Output Characteristics(TJ = 25°C) 60 10 45 13V 70 5 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 80 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 6-2008 30 15V 90 Rev B IC, COLLECTOR CURRENT (A) = 15V TJ = -55°C 35 GE 052-6284 V 40 APT15GT60BRDQ1(G) 100 IC, COLLECTOR CURRENT (A) 45 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 8 VGE = 15V 6 4 2 VCE = 400V TJ = 25°C, or 125°C 0 RG = 10Ω L = 100µH tf, FALL TIME (ns) tr, RISE TIME (ns) 10 V = 400V 20 RCE= 10Ω G L = 100µH 0 RG = 10Ω, L = 100µH, VCE = 400V TJ = 125°C, VGE = 15V 150 100 50 0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 600 EOFF, TURN OFF ENERGY LOSS (µJ) V = 400V CE V = +15V GE R = 10Ω G 800 TJ = 125°C 600 400 200 TJ = 25°C TJ = 25°C, VGE = 15V 0 0 EON2, TURN ON ENERGY LOSS (µJ) 40 200 15 500 V = 400V CE V = +15V GE R = 10Ω G TJ = 125°C 400 300 200 TJ = 25°C 100 0 0 0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 0 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 1200 1000 1000 V = 400V CE V = +15V GE T = 125°C Eon2,30A J 800 Eoff,30A 600 Eon2,15A 400 Eoff,15A Eoff,7.5A 200 0 Eon2,7.5A 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) VGE =15V,TJ=25°C 60 250 RG = 10Ω, L = 100µH, VCE = 400V TJ = 25 or 125°C,VGE = 15V 6-2008 Rev B VGE =15V,TJ=125°C 80 30 1000 052-6284 100 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 5 120 5 10 15 20 25 30 35 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 20 140 0 0 25 APT15GT60BRDQ1(G) 160 10 V = 400V CE V = +15V GE R = 10Ω Eon2,30A G 800 600 400 Eoff,30A Eoff,15A 200 0 Eon2,15A Eoff,7.5A Eon2,7.5A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 500 P C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A) Cies 1,000 Coes 100 50 APT15GT60BRDQ1(G) 50 2,000 Cres 45 40 35 30 25 20 15 10 5 10 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.70 0.7 0.50 0.40 0.5 0.30 Note: 0.3 0.20 0.10 10-5 t1 t2 SINGLE PULSE 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 PDM ZθJC, THERMAL IMPEDANCE (°C/W) D = 0.9 0.60 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.271 0.0013 0.00675 0.0969 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 10 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 10Ω G fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC 0 5 10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 6-2008 0.165 Fmax = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 50 Rev B 0.243 Dissipated Power (Watts) 100 052-6284 TC (°C) ZEXT TJ (°C) FMAX, OPERATING FREQUENCY (kHz) 180 APT15GT60BRDQ1(G) 10% APT15DQ60 Gate Voltage TJ = 125°C IC V CC td(on) V CE tr Collector Current 90% A Switching Energy D.U.T. 90% TJ = 125°C td(off) tf 90% Collector Voltage 10% Switching Energy 0 Collector Current Rev B 6-2008 Figure 23, Turn-off Switching Waveforms and Definitions 052-6284 Collector Voltage Figure 22, Turn-on Switching Waveforms and Definitions Figure21,InductiveSwitchingTestCircuit Gate Voltage 5% 10% TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. APT15GT60BRDQ1(G) UNIT Characteristic / Test Conditions IF(AV) IF(RMS) Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5) 15 RMS Forward Current (Square wave, 50% duty) 30 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) IFSM Amps 110 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions VF MIN TYP IF = 15A 2.0 Forward Voltage IF = 30A 2.5 IF = 15A, TJ = 125°C 1.5 MIN TYP MAX UNIT Volts DYNAMIC CHARACTERISTICS Characteristic Symbol Test Conditions MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C F F R J - 15 trr Reverse Recovery Time - 19 Qrr Reverse Recovery Charge - 21 - 2 - 105 ns - 250 nC - 5 - 55 ns - 420 nC - 15 Amps IRRM IF = 15A, diF/dt = -200A/µs VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 15A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 15A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps D = 0.9 1.20 1.00 0.7 0.80 0.5 Note: 0.3 0.40 t 0.1 SINGLE PULSE 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION TC (°C) 0.583 0.767 Dissipated Power (Watts) 0.0022 6-2008 TJ (°C) 0.060 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL Rev B 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 052-6284 t1 t2 0.20 0 PDM 0.60 ZEXT ZθJC, THERMAL IMPEDANCE (°C/W) 1.40 50 TJ = 175°C 40 TJ = 125°C 30 20 10 TJ = 25°C TJ = -55°C 0 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage IRRM, REVERSE RECOVERY CURRENT (A) 30A 500 15A 300 7.5A 200 100 0 0 200 400 600 800 1000120014001600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change trr 0.6 trr 0.4 T =125°C J V =400V R 20 30A 15 10 15A 7.5A 5 Duty cycle = 0.5 T =175°C J 20 15 10 Qrr 5 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 29. Dynamic Parameters vs. Junction Temperature 0 0 75 100 125 150 175 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature 90 80 70 60 50 40 30 20 10 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 1 CJ, JUNCTION CAPACITANCE (pF) 25 30 IRRM 0 20 25 0.2 6-2008 Rev B 052-6284 40 35 0.8 0.0 7.5A 60 0 200 400 600 800 1000120014001600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Current vs. Current Rate of Change Qrr 1.0 15A 80 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 1.2 30A 100 0 200 400 600 800 1000120014001600 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 26. Reverse Recovery Time vs. Current Rate of Change R 400 R 0 T =125°C J V =400V 600 T =125°C J V =400V 120 Qrr, REVERSE RECOVERY CHARGE (nC) 700 APT15GT60BRDQ1(G) 140 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 60 25 50 TYPICAL PERFORMANCE CURVES APT15GT60BRDQ1(G) Vr diF /dt Adjust +18V APT6017LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure32.DiodeTestCircuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure33,DiodeReverseRecoveryWaveformandDefinitions TO-247PackageOutline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) Collector (Cathode) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 2.21 (.087) 2.59 (.102) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector (Cathode) Emitter (Anode) 6-2008 19.81 (.780) 20.32 (.800) Rev B 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 052-6284 5 1