APT19F100J_E.pdf

APT19F100J
1000V, 20A, 0.44Ω Max, trr ≤290ns
N-Channel FREDFET
S
S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
G
SO
2
T-
27
"UL Recognized"
file # E145592
IS OTO P ®
D
APT19F100J
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
20
Continuous Drain Current @ TC = 100°C
13
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1875
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
16
A
1
120
Thermal and Mechanical Characteristics
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
460
RθJC
Junction to Case Thermal Resistance
0.27
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
VIsolation
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT
Torque
Package Weight
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
-55
150
°C/W
°C
V
2500
1.03
oz
29.2
g
10
in·lbf
1.1
N·m
8-2011
TJ,TSTG
0.15
Rev E
Min
Characteristic
050-8080
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
1000
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 16A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1000V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.15
0.39
4
-10
0.44
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT19F100J
Min
Test Conditions
VDS = 50V, ID = 16A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
34
8500
115
715
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
290
VGS = 0V, VDS = 0V to 667V
150
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 667V, ID = 16A
tr
td(off)
tf
260
46
125
36
37
140
VGS = 0 to 10V, ID = 16A,
VDS = 500V
RG = 2.2Ω 6 , VGG = 15V
Turn-Off Delay Time
Current Fall Time
nC
ns
35
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
Peak Recovery dv/dt
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Diode Forward Voltage
trr
dv/dt
Test Conditions
A
120
S
1.1
290
600
TJ = 25°C
TJ = 125°C
TJ = 25°C
VDD = 100V
TJ = 125°C
diSD/dt = 100A/μs
TJ = 25°C
Unit
20
G
ISD = 16A, TJ = 25°C, VGS = 0V
ISD = 16A 3
Max
TJ = 125°C
ISD ≤ 16A, di/dt ≤1000A/μs, VDD = 667V,
TJ = 125°C
1.3
3.5
10.6
14.2
V
ns
μC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 14.65mH, RG = 2.2Ω, IAS = 16A.
050-8080
Rev E
8-2011
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT19F100J
80
V
GS
30
= 10V
T = 125°C
J
25
TJ = -55°C
60
ID, DRIAN CURRENT (A)
50
40
TJ = 25°C
30
20
TJ = 125°C
10
0
V
15
5V
10
5
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
0
NORMALIZED TO
VGS = 10V @ 16A
2.5
1.5
1.0
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
TJ = -55°C
60
TJ = 25°C
40
TJ = 125°C
20
0.5
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
45
Ciss
10,000
40
35
TJ = -55°C
30
C, CAPACITANCE (pF)
TJ = 25°C
25
TJ = 125°C
20
15
10
1000
Coss
100
Crss
5
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
4
8
12
16
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
0
0
120
ID = 16A
14
0
10
20
50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
100
80
60
TJ = 25°C
40
TJ = 150°C
20
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
8-2011
0
ISD, REVERSE DRAIN CURRENT (A)
0
Rev E
gfs, TRANSCONDUCTANCE
VDS> ID(ON) x RDS(ON) MAX.
100
2.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
120
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
= 6, 7, 8 & 9V
GS
20
050-8080
ID, DRAIN CURRENT (A)
70
APT19F100J
200
200
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
IDM
10
13μs
100μs
1ms
1
0.1
Rds(on)
10ms
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
13μs
100μs
1ms
10ms
100ms
DC line
TJ = 150°C
TC = 25°C
1
100ms
TJ = 125°C
TC = 75°C
1
Rds(on)
10
C
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.25
D = 0.9
0.20
0.7
0.15
0.5
0.10
0.3
Note:
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.30
t1
t2
t1 = Pulse Duration
t
SINGLE PULSE
0.05
0
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
8-2011
3.3 (.129)
3.6 (.143)
Rev E
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
14.9 (.587)
15.1 (.594)
0.75 (.030)
0.85 (.033)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drai n
* Emitter terminals are shorte d
internally. Current handlin g
capability is equal for either
Source terminal .
38.0 (1.496)
38.2 (1.504)
* Source
050-8080
12.6 (.496)
12.8 (.504)
Dimensions in Millimeters and (Inches)
Gate
1.0
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