APT19F100J 1000V, 20A, 0.44Ω Max, trr ≤290ns N-Channel FREDFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D G SO 2 T- 27 "UL Recognized" file # E145592 IS OTO P ® D APT19F100J Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 20 Continuous Drain Current @ TC = 100°C 13 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1875 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 16 A 1 120 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 460 RθJC Junction to Case Thermal Resistance 0.27 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m 8-2011 TJ,TSTG 0.15 Rev E Min Characteristic 050-8080 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 1000 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 16A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1000V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 1.15 0.39 4 -10 0.44 5 TJ = 25°C VGS = 0V 250 1000 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT19F100J Min Test Conditions VDS = 50V, ID = 16A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 34 8500 115 715 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 290 VGS = 0V, VDS = 0V to 667V 150 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 667V, ID = 16A tr td(off) tf 260 46 125 36 37 140 VGS = 0 to 10V, ID = 16A, VDS = 500V RG = 2.2Ω 6 , VGG = 15V Turn-Off Delay Time Current Fall Time nC ns 35 Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current Peak Recovery dv/dt Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage trr dv/dt Test Conditions A 120 S 1.1 290 600 TJ = 25°C TJ = 125°C TJ = 25°C VDD = 100V TJ = 125°C diSD/dt = 100A/μs TJ = 25°C Unit 20 G ISD = 16A, TJ = 25°C, VGS = 0V ISD = 16A 3 Max TJ = 125°C ISD ≤ 16A, di/dt ≤1000A/μs, VDD = 667V, TJ = 125°C 1.3 3.5 10.6 14.2 V ns μC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 14.65mH, RG = 2.2Ω, IAS = 16A. 050-8080 Rev E 8-2011 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT19F100J 80 V GS 30 = 10V T = 125°C J 25 TJ = -55°C 60 ID, DRIAN CURRENT (A) 50 40 TJ = 25°C 30 20 TJ = 125°C 10 0 V 15 5V 10 5 TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 NORMALIZED TO VGS = 10V @ 16A 2.5 1.5 1.0 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 TJ = -55°C 60 TJ = 25°C 40 TJ = 125°C 20 0.5 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 45 Ciss 10,000 40 35 TJ = -55°C 30 C, CAPACITANCE (pF) TJ = 25°C 25 TJ = 125°C 20 15 10 1000 Coss 100 Crss 5 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 4 8 12 16 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 200 400 600 800 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 200V 10 VDS = 500V 8 6 VDS = 800V 4 2 0 0 120 ID = 16A 14 0 10 20 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 100 80 60 TJ = 25°C 40 TJ = 150°C 20 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 8-2011 0 ISD, REVERSE DRAIN CURRENT (A) 0 Rev E gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 100 2.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 120 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 = 6, 7, 8 & 9V GS 20 050-8080 ID, DRAIN CURRENT (A) 70 APT19F100J 200 200 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 10 13μs 100μs 1ms 1 0.1 Rds(on) 10ms Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 13μs 100μs 1ms 10ms 100ms DC line TJ = 150°C TC = 25°C 1 100ms TJ = 125°C TC = 75°C 1 Rds(on) 10 C 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.25 D = 0.9 0.20 0.7 0.15 0.5 0.10 0.3 Note: P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 t1 t2 t1 = Pulse Duration t SINGLE PULSE 0.05 0 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 8-2011 3.3 (.129) 3.6 (.143) Rev E 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drai n * Emitter terminals are shorte d internally. Current handlin g capability is equal for either Source terminal . 38.0 (1.496) 38.2 (1.504) * Source 050-8080 12.6 (.496) 12.8 (.504) Dimensions in Millimeters and (Inches) Gate 1.0