APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT® E E The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. C G Features S • Low Forward Voltage Drop • RBSOA and SCSOA Rated • Low Tail Current • High Frequency Switching to 50KHz • Integrated Gate Resistor • Ultra Low Leakage Current OT 22 7 "UL Recognized" IS OT OP ® file # E145592 Low EMI, High Reliability • RoHS Compliant All Ratings: TC = 25°C unless otherwise specified. Maximum Ratings Symbol Parameter Ratings VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 IC1 Continuous Collector Current @ TC = 25°C 195 IC2 Continuous Collector Current @ TC = 100°C 100 ICM Pulsed Collector Current 1 600 SSOA PD TJ, TSTG Unit Volts Switching Safe Operating Area @ TJ = 150°C Amps 600A @ 600V Total Power Dissipation Operating and Storage Junction Temperature Range 500 Watts -55 to 150 °C Static Electrical Characteristics Min Typ Max V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA) 600 - - VGE(TH) Gate Threshold Voltage (VCE = VGE, IC = 4.0mA, Tj = 25°C) 3 4 5 Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 25°C) 1.6 2.0 2.5 Collector Emitter On Voltage (VGE = 15V, IC = 200A, Tj = 125°C) - 2.5 - Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 - - 25 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 - - 1000 Gate-Emitter Leakage Current (VGE = ±30V) - - 300 VCE(ON) ICES IGES Volts μA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com Unit nA 052-6298 Rev D 3 - 2012 Symbol Characteristic / Test Conditions Dynamic Characteristic Symbol APT200GT60JR Characteristic Test Conditions Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Min Typ Max - 8650 - - 546 - - 1180 - - 7.5 - VGE = 15V - 946 - VGE = 0V, VCE = 25V f = 1MHz Gate Charge Qg Total Gate Charge Qge Gate-Emitter Charge VCE= 300V - 58 - Gate-Collector Charge IC = 200A - 430 - TJ = 150°C, RG = 2.2Ω , VGE = 15V, 600 Qgc SSOA td(on) tr td(off) tf 3 Switching Safe Operating Area L = 100μH, VCE= 600V Current Rise Time Turn-Off Delay Time 72 - Inductive Switching (25°C) - 160 - VCC = 400V - 952 - - 212 - RG = 2.2Ω - - - TJ = +25°C - 9193 - VGE = 15V Current Fall Time IC = 200A Eon1 Turn-On Switching Energy 4 Eon2 Turn-On Switching Energy 5 Eoff Turn-Off Switching Energy 6 - 19290 - td(on) Turn-On Delay Time - 71 - Inductive Switching (125°C) - 157 - Turn-Off Delay Time VCC = 400V - 1030 - Current Fall Time VGE = 15V - 202 - Turn-On Switching Energy 4 IC = 200A - - Eon2 Turn-On Switching Energy RG = 2.2Ω - 5 - 10460 - Eoff Turn-Off Switching Energy 6 - 20210 - tr td(off) tf Eon1 Current Rise Time TJ = +125°C pF V nC A - Turn-On Delay Time Unit ns μJ ns μJ Thermal and Mechanical Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit RθJC Junction to Case (IGBT) - - 0.21 RθJC Junction to Case (DIODE) - - N/A WT Package Weight - 29.2 - g - - 10 in·lbf - - 1.1 N·m 2500 - - Volts °C/W Torque Terminals and Mounting Screws VIsolation RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) 052-6298 Rev D 3 - 2012 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages. 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance not including gate driver impedance. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves GE = 15V TJ= 25°C TJ= 125°C TJ= 150°C TJ= 55°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) V APT200GT60JR 400 13/15V 12V 350 11V 300 200 100 8V 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25°C) 5V 0 4 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25°C) TJ= -55°C TJ= 125°C VGE, GATE-TO-EMITTER VOLTAGE (V) 20 250μs PULSE TEST<0.5 % DUTY CYCLE IC, COLLECTOR CURRENT (A) 9V 150 0 TJ= 25°C 10V 250 I = 200A C T = 25°C J VCE = 120V 15 VCE = 300V 10 VCE = 480V 5 0 0 250 500 750 GATE CHARGE (nC) FIGURE 4, Gate charge 6 TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 5 4 IC = 400A 3 IC = 200A IC = 100A 2 1 0 6 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 1000 5 4 IC = 400A 3 IC = 200A IC = 100A 2 1 VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 0 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 1.00 0.95 0.90 0.85 0.80 0.75 -.50 -.25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature TC, Case Temperature (°C) FIGURE 8, DC Collector Current vs Case Temperature 052-6298 Rev D 3 - 2012 1.05 IC, DC COLLECTOR CURRENT (A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 Typical Performance Curves APT200GT60JR 1400 td(OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 100 VGE = 15V 80 60 40 VCE = 400V TJ = 25°C, or 125°C RG = 2.2Ω L = 100μH 20 1200 1000 VGE =15V,TJ=25°C 600 400 VCE = 400V RG = 2.2Ω L = 100μH 200 0 0 0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 400 VGE =15V,TJ=125°C 800 0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 450 RG = 2.2Ω, L = 100μH, VCE = 400V RG = 2.2Ω, L = 100μH, VCE = 400V 400 350 tr, FALL TIME (ns) tr, RISE TIME (ns) 300 200 100 TJ = 25°C, VGE = 15V 300 250 200 TJ = 125°C, VGE = 15V 150 100 TJ = 25 or 125°C,VGE = 15V 50 0 0 0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current V = 400V CE V = +15V GE R = 2.2Ω 35000 G 30000 25000 TJ = 125°C 20000 15000 10000 TJ = 25°C 5000 50000 EOFF, TURN OFF ENERGY LOSS (μJ) Eon2, TURN ON ENERGY LOSS (μJ) 0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 40000 0 J 80000 Eon2,400A 60000 Eoff,200A 40000 Eon2,200A 20000 30000 20000 TJ = 25°C 10000 60000 Eoff,400A Eoff,100A TJ = 125°C 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current SWITCHING ENERGY LOSSES (μJ) SWITCHING ENERGY LOSSES (μJ) 052-6298 Rev D 3 - 2012 V = 400V CE V = +15V GE T = 125°C G 40000 0 0 50 100 150 200 250 300 350 400 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 100000 V = 400V CE V = +15V GE R = 2.2Ω 50000 V = 400V CE V = +15V GE R = 2.2Ω G 40000 Eoff,400A 30000 20000 Eoff,200A 10000 Eon2,200A Eon2,100A 0 0 5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance Eon2,400A Eon2,100A Eoff,100A 0 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature Typical Performance Curves APT200GT60JR IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 100,000 Cies 10,000 1,000 Coes Cres 100 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area D = 0.9 0.20 0.7 0.15 0.5 Note: P DM 0.10 0.3 t1 t2 0.05 t 0.1 0.05 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 0 10-5 10-4 10-3 10-2 10 -1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 75°C 100°C T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 1.0Ω F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC G IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 052-6298 Rev D 3 - 2012 FMAX, OPERATING FREQUENCY (kHz) ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 APT200GT60JR 10% Gate Voltage td(on) APT100DQ60 TJ = 125°C tr Collector Current 90% IC V CC V CE 10% 5% 5% A CollectorVoltage D.U.T. Figure 21, Inductive Switching Test Circui Switching Energy t Figure 22, Turn-on Switching Waveforms and Definitions 90% TJ = 125°C Gate Voltage 90% td(off ) tf 10% 0 Collector Current CollectorVoltage Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 052-6298 Rev D 3 - 2012 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) *Emitter Collector *Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) Gate *Emitter Dimensions in Millimeters and (Inches )