APT22F120B2_L_D.pdf

APT22F120B2
APT22F120L
1200V, 23A, 0.70Ω Max, trr ≤270ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
T-Ma x TM
TO-264
APT22F120B2
APT22F120L
D
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol Parameter
ID
Unit
Ratings
Continuous Drain Current @ TC = 25°C
23
Continuous Drain Current @ TC = 100°C
15
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1875
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
12
A
1
90
Thermal and Mechanical Characteristics
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
1040
RθJC
Junction to Case Thermal Resistance
0.12
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
0.11
-55
150
300
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Rev D 8-2011
Min
Characteristic
050-8081
Symbol
Static Characteristics
Symbol
VBR(DSS)
∆VBR(DSS)/∆TJ
Parameter
Test Conditions
Min
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
1200
Drain-Source On Resistance 3
VGS(th)
Gate-Source Threshold Voltage
VGS = 10V, ID = 12A
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1200V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
APT22F120B2_L
Typ
Max
1.41
0.53
4
-10
0.70
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
∆VGS(th)/∆TJ
TJ = 25°C unless otherwise specified
Min
Test Conditions
VDS = 50V, ID = 12A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
27
8370
100
615
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
240
VGS = 0V, VDS = 0V to 800V
125
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 800V, ID = 12A
tr
td(off)
tf
Turn-Off Delay Time
260
42
120
45
27
145
42
VGS = 0 to 10V, ID = 12A,
VDS = 600V
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
23
A
G
90
S
ISD = 12A, TJ = 25°C, VGS = 0V
TJ = 25°C
TJ = 125°C
ISD = 12A 3
TJ = 25°C
diSD/dt = 100A/μs
TJ = 125°C
Unit
TJ = 25°C
TJ = 125°C
ISD ≤ 12A, di/dt ≤1000A/μs, VDD = 800V,
TJ = 125°C
375
720
2.2
5.8
12.3
16.5
1.1
425
850
V
ns
μC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 26.04mH, RG = 25Ω, IAS = 12A.
050-8081
Rev D 8-2011
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -3.80E-7/VDS^2 + 4.62E-8/VDS + 6.57E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT22F120B2_L
60
V
GS
20
= 10V
T = 125°C
J
16
TJ = -55°C
ID, DRIAN CURRENT (A)
40
30
TJ = 25°C
20
10
GS
12
5V
8
4
4.5V
TJ = 125°C
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
Figure 2, Output Characteristics
90
NORMALIZED TO
2.5
2.0
1.5
1.0
0.5
70
60
TJ = -55°C
50
TJ = 25°C
40
TJ = 125°C
30
20
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
Ciss
10,000
30
C, CAPACITANCE (pF)
TJ = -55°C
25
TJ = 25°C
20
TJ = 125°C
15
10
1000
Coss
100
5
0
Crss
0
16
2
4
6
8
10
12
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800 1000 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 240V
10
VDS = 600V
8
6
VDS = 960V
4
2
0
0
90
ID = 12A
14
0
10
14
50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
ISD, REVERSE DRAIN CURRENT (A)
gfs, TRANSCONDUCTANCE
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
35
VGS, GATE-TO-SOURCE VOLTAGE (V)
VDS> ID(ON) x RDS(ON) MAX.
80
VGS = 10V @ 12A
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
80
70
60
50
40
TJ = 25°C
30
TJ = 150°C
20
10
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev D 8-2011
0
= 6, 7, 8 & 9V
V
050-8081
ID, DRAIN CURRENT (A)
50
200
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
APT22F120B2_L
200
10
13μs
100μs
1ms
1
10ms
Rds(on)
0.1
Rds(on)
10
13μs
100μs
1ms
TJ = 150°C
TC = 25°C
1
DC line
0.1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
10ms
Scaling for Different Case & Junction
Temperatures:
100ms
ID = ID(T = 25°C)*(TJ - TC)/125
C
DC line
100ms
TJ = 125°C
TC = 75°C
1
IDM
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.12
D = 0.9
0.10
0.7
0.08
Note:
0.5
0.06
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.14
0.3
0.04
t2
t1 = Pulse Duration
SINGLE PULSE
0.02
0
t1
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
T-MAX® (B2) Package Outline
1.0
TO-264 (L) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drai n
Drai n
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
050-8081
Rev D 8-2011
0.40 (.016)
1.016(.040)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drai n
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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