APT24M80B APT24M80S 800V, 25A, 0.39Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. TO -24 7 D 3 PAK APT24M80B APT24M80S D Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 25 Continuous Drain Current @ TC = 100°C 16 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 975 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 12 A 1 85 Thermal and Mechanical Characteristics Max Unit W PD Total Power Dissipation @ TC = 25°C 625 RθJC Junction to Case Thermal Resistance 0.20 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 °C/W °C 0.22 oz 6.2 g 10 in·lbf 1.1 N·m 7-2011 Typ Rev C Min Characteristic 050-8135 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 800 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 12A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 800V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.87 0.31 4 -10 0.39 5 100 500 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 3 VGS = VDS, ID = 1mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT24M80B_S Min Test Conditions VDS = 50V, ID = 12A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 21 4595 80 455 Max Unit S pF 215 VGS = 0V, VDS = 0V to 533V 105 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 533V, ID = 12A tr td(off) tf Turn-Off Delay Time 150 25 75 26 38 115 33 VGS = 0 to 10V, ID = 12A, VDS = 400V RG = 4.7Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage ISD = 12A, TJ = 25°C, VGS = 0V trr Reverse Recovery Time ISD = 12A, VDD = 100V 3 Qrr Reverse Recovery Charge Peak Recovery dv/dt Typ Max Unit 25 A G VSD dv/dt Min D 85 S diSD/dt = 100A/μs, TJ = 25°C ISD ≤ 12A, di/dt ≤1000A/μs, VDD = 533V, TJ = 125°C 1.0 880 11 V ns μC 10 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 13.54mH, RG = 10Ω, IAS = 12A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 050-8135 Rev C 7-2011 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = 1.46E-8/VDS^2 + 1.87E-8/VDS + 7.21E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT24M80B_S 60 V GS 30 = 10V T = 125°C J TJ = -55°C V = 10, & 15V GS 25 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 50 40 TJ = 25°C 30 20 TJ = 125°C 10 V = 6, & 6.5V GS 5.5V 20 15 5V 10 5 4.5V TJ = 150°C 0 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4V 0 Figure 2, Output Characteristics 90 NORMALIZED TO 2.5 VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 VGS = 10V @ 12A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 2.0 1.5 1.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.5 70 60 50 TJ = -55°C 40 TJ = 25°C 30 TJ = 125°C 20 10 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 6,000 30 TJ = -55°C Ciss 20 TJ = 125°C 15 10 1,000 Coss 100 5 Crss 100 200 300 400 500 600 700 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 160V 10 VDS = 400V 8 6 VDS = 640V 4 2 0 0 90 ID = 12A 14 0 10 20 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 80 70 60 50 TJ = 25°C 40 TJ = 150°C 30 7-2011 16 5 10 15 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 20 10 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev C 0 050-8135 0 VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TJ = 25°C ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE 25 200 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) APT24M80B_S 200 10 13μs 100μs 1ms 1 10ms Rds(on) 100ms 0.1 TJ = 125°C TC = 75°C 1 IDM 10 13μs 100μs 1 Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 1ms 10ms 100ms DC line Rds(on) TJ = 150°C TC = 25°C C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.20 D = 0.9 0.15 0.7 Note: 0.5 0.10 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 t1 t2 0.3 t1 = Pulse Duration 0.05 0 10-5 t Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 0.1 0.05 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration D3PAK Package Outline TO-247 (B) Package Outline e3 100% Sn Plated 15.49 (.610) 16.26 (.640) Drai n 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drai n (Heat Sink) e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 1.0 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 1.016(.040) 050-8135 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Rev C 7-2011 0.46 (.018) 0.56 (.022) {3 Plcs} 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters (Inches) Gate Drai n Source 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs. } Source Drai n Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated