APT20M20B2_LLL_D.pdf

APT20M20B2LL
APT20M20LLL
200V 100A 0.020Ω
POWER MOS 7
R
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
TO-264
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
T-MAX™
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M20B2LL_LLL
UNIT
200
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
568
Watts
Linear Derating Factor
4.55
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
400
TL
EAS
100
5
-55 to 150
°C
300
Amps
100
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 50A)
TYP
MAX
Volts
0.020
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
4-2004
Characteristic / Test Conditions
050-7013 Rev D
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT20M20B2LL_LLL
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
2180
C rss
Reverse Transfer Capacitance
f = 1 MHz
95
VGS = 10V
110
VDD = 100V
43
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 100A @ 25°C
tf
40
VDD = 100V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
2
INDUCTIVE SWITCHING @ 25°C
7
465
VDD = 130V, VGS = 15V
7
ns
26
ID = 100A @ 25°C
Fall Time
nC
13
VGS = 15V
Turn-off Delay Time
pF
47
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
6850
VGS = 0V
3
MAX
ID = 100A, RG = 5Ω
455
INDUCTIVE SWITCHING @ 125°C
920
VDD = 130V, VGS = 15V
ID = 100A, RG = 5Ω
µJ
915
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
100
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID100A, dl S/dt = 100A/µs)
284
ns
Q rr
Reverse Recovery Charge (IS = -ID100A, dl S /dt = 100A/µs)
3.06
µC
dv/
Peak Diode Recovery
dt
dv/
400
(Body Diode)
1.3
(VGS = 0V, IS = -ID100A)
dt
6
Amps
Volts
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.22
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.50mH, RG = 25Ω, Peak IL = 100A
5 The maximum current is limited by lead temperature
6 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID75A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
7 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.9
0.7
0.15
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7013 Rev D
4-2004
0.25
0.20
0.3
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0
0.05
10-5
t1
t2
0.05
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
APT20M20B2LL_LLL
250
RC MODEL
Junction
temp. ( ”C)
0.0844
0.0124F
Power
(Watts)
0.138
0.218F
Case temperature
ID, DRAIN CURRENT (AMPERES)
VGS =15 &10V
9V
200
7.5V
150
7V
100
6.5
6V
50
5.5V
0
200
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
140
120
100
TJ = +125°C
80
TJ = +25°C
TJ = -55°C
60
40
20
0 1
2 3
4 5 6
7 8 9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
100
80
60
40
20
0
25
I
V
D
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
20 40
60 80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON)vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
= 50A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.20
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
1.30
1.15
120
NORMALIZED TO
= 10V @ I = 50A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
0
V
050-7013 Rev D
ID, DRAIN CURRENT (AMPERES)
180
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
100
100µS
1mS
10
10mS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
10,000
OPERATION HERE
LIMITED BY RDS (ON)
Crss
I
D
= 75A
VDS=40V
12
VDS=100V
VDS=160V
8
4
0
0
20
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
90
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
160
80
V
G
J
DD
R
G
L = 100µH
50
= 130V
tr and tf (ns)
V
= 5Ω
T = 125°C
J
L = 100µH
40
= 130V
= 5Ω
T = 125°C
120
60
DD
R
140
td(off)
70
td(on) and td(off) (ns)
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
40 60 80 100 120 140 160 180
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
30
td(on)
20
100
tf
80
tr
60
40
20
10
0
20
40
0
20
80
100
120
140
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
60
80
100
120
140
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1400
DD
R
G
= 5Ω
T = 125°C
J
1000
L = 100µH
EON includes
diode reverse recovery.
800
600
Eon
400
200
0
20
60
= 130V
SWITCHING ENERGY (µJ)
1200
40
2500
V
SWITCHING ENERGY (µJ)
Coss
1,000
10
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
4-2004
Ciss
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
050-7013 Rev D
APT20M20B2LL_LLL
20,000
508
2000
Eoff
1500
Eon
1000
V
I
= 130V
= 100A
T = 125°C
500
J
L = 100µH
E ON includes
Eoff
40
DD
D
diode reverse recovery.
60
80
100
120
140
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT20M20B2LL_LLL
Typical Performance Curves
90%
10%
Gate Voltage
Gate Voltage
TJ125°C
td(off)
td(on)
tf
tr
Drain Current
90%
5%
5%
10%
T 125°C
J
Drain Voltage
90%
10%
Drain Voltage
0
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT100S20B
V CE
IC
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7013 Rev D
Drain
20.80 (.819)
21.46 (.845)
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