APT20M22LVFR(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 200V 100A 0.022Ω POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-264 Package TO-264 D FREDFET G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT20M22LVR(G) Drain-Source Voltage 200 Continuous Drain Current @ TC = 25°C 1 5 Volts 100 5 UNIT Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 520 Watts Linear Derating Factor 4.16 W/°C VGSM PD TJ,TSTG 400 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 5 -55 to 150 100 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 200 Volts 100 Amps On State Drain Current 2 5 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.022 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5549 Rev B Symbol APT20M22LVFR(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 8500 10200 Coss Output Capacitance VDS = 25V 1950 2730 Crss Reverse Transfer Capacitance f = 1 MHz 560 840 VGS = 10V 290 435 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 66 120 100 180 VGS = 15V 16 32 VDD = 0.5 VDSS 25 50 ID = ID [Cont.] @ 25°C 48 72 RG = 0.6Ω 5 10 TYP MAX Qg Total Gate Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 100 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ dt Peak Diode Recovery dv/dt 400 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 220 Tj = 125°C 420 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 0.8 Tj = 125°C 3.0 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 10 Tj = 125°C 18 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.24 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% VR = 200V. D=0.5 0.1 0.2 0.1 0.05 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5549 Rev B 0.3 0.01 0.02 0.005 0.01 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 500µH, R = 25Ω, Peak I = 100A j G L 5 I ≤ -I [Cont.], di/ = 100A/µs, V S D DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.05 UNIT 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT20M22LVFR(G) 200 VGS=7V, 8V, 10V & 15V VGS=15V 6.5V 160 6V 120 5.5V 80 5V 40 4.5V ID, DRAIN CURRENT (AMPERES) 160 6V 120 5.5V 80 5V 40 4.5V 4V 4V 0 0 ID, DRAIN CURRENT (AMPERES) TJ = -55°C TJ = +25°C 160 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 80 TJ = +125°C 40 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 100 80 60 40 20 0 0 1 2 3 4 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 20 40 60 80 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 200 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.3 1.2 VGS=10V 1.1 1.0 VGS=20V 0.9 0.8 0 50 100 150 200 250 300 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 1.2 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 2.5 10V 8V 7V 6.5V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5549 Rev B ID, DRAIN CURRENT (AMPERES) 200 APT20M22LVFR(G) 10µS OPERATION HERE LIMITED BY RDS (ON) 100 50 1mS 10mS 10 TC =+25°C TJ =+150°C SINGLE PULSE 5 100mS D VDS=100V 12 VDS=160V 8 4 0 5,000 Coss Crss 1,000 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE VDS=40V 16 Ciss 100 I = I [Cont.] D 10,000 DC 1 5 10 50 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 C, CAPACITANCE (pF) 100µS 1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 30,000 0 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 500 400 TJ =+150°C 100 TJ =+25°C 50 10 5 1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-264 Package Outline e3 SAC: Tin, Silver, Copper 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) Drain 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 050-5549 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) Gate Drain Source