APT20M11JVFR
200V
POWER MOS V ®
0.011Ω
175A
FREDFET
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
ISOTOP®
• Fast Recovery Body Diode
• 100% Avalanche Tested
D
FREDFET
• Lower Leakage
• Popular SOT-227 Package
G
• Faster Switching
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M11JVFR
UNIT
200
Volts
Drain-Source Voltage
175
Continuous Drain Current @ T C = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ T C = 25°C
700
Watts
Linear Derating Factor
5.6
W/°C
VGSM
PD
TJ,TSTG
700
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
175
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
Volts
175
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.011
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (V GS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (V DS = VGS , ID = 5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-802 8
FAX: (541) 388-036 4
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5603 Rev B
Symbol
APT20M11JVFR
DYNAMIC CHARACTERISTICS
Test Conditions
Characteristic
Symbol
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
18000
21600
Coss
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
4100
1350
5740
2025
Qg
Total Gate Charge
VGS = 10V
690
1035
Qgs
Gate-Source Charge
VDD = 0.5 VDSS
Qgd
Gate-Drain ("Miller ") Charge
ID = ID [Cont.] @ 25°C
95
290
140
435
VGS = 15V
20
40
VDD = 0.5 VDSS
40
80
ID = ID [Cont.] @ 25°C
75
10
115
20
TYP
MAX
t d(on)
3
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
RG = 0.6Ω
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
IS
MIN
175
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
dt
Peak Diode Recovery
700
1.3
(Body Diode)
(VGS = 0V, IS = -ID [Cont.])
dv/ 5
dt
5
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
150
250
Tj = 125°C
500
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
250
0.9
Tj = 125°C
2.5
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
12
Tj = 125°C
20
UNIT
Amps
Volts
V/ns
ns
µC
Amps
THERMAL /PACKAGE CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
2500
j
G
= 25Ω, Peak IL = 175A
VR = 200V
0.05
0.2
0.1
0.01
0.005
0.05
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5603 Rev B
0.2
D=0.5
0.01
SINGLE PULSE
0.0005
10-5
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-4
lb•in
5 I ≤ -I [Cont.], di/ = 100A/µs, V
S
D
DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
°C/W
Volts
13
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 235µH, R
UNIT
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT20M11JVFR
VGS =7V, 8V, 9V, 10V & 15V
360
300
6V
240
180
5.5V
120
5V
60
4.5V
4V
0
0
20
40
60
80
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
300
TJ = +125°C
VDS> I D (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ < 0.5 % DUTY CYCLE
240
180
120
T J = +125°C
60
T J = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
T J = +25°C
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
100
0
6V
180
5.5V
120
5V
60
4.5V
1.15
NORMALIZED TO
V GS = 10V @ 0.5 ID [Cont.]
1.10
V GS=10V
1.05
1.00
0.95
VGS =20V
0.90
0.85
0
100
200
300
400
ID , DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
25
0.90
-50
-25
0
25 50 75 100 125 150
T J, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
GS
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
T J, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID = 0.5 I D [Cont.]
V
= 10V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
T C, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5603 Rev B
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
T C, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
240
DSS
50
BV
I , DRAIN CURRENT (AMPERES)
D
200
150
6.5V
9V
4V
0
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
DS
T J = -55°C
300
8V
7V
0
R
I , DRAIN CURRENT (AMPERES)
D
360
VGS=15V
10V
6.5V
I , DRAIN CURRENT (AMPERES)
D
I , DRAIN CURRENT (AMPERES)
D
360
APT20M11JVFR
50,000
10µS
OPERATION HERE
LIMITED BY RDS (ON)
500
Ciss
100µS
C, CAPACITANCE (pF)
ID , DRAIN CURRENT (AMPERES)
1,000
100
1mS
50
10mS
10
TC =+25°C
TJ =+150°C
SINGLE PULSE
5
100mS
DC
Crss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
5,000
500
1
5
10
50 100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
ID = 0.5 ID [Cont.]
VDS =40V
VDS =100V
12
VDS =160V
8
4
0
Coss
1,000
1
16
10,000
0
200 400 600 800 1000 1200 1400
Qg , TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
400
TJ =+150°C
100
T J =+25°C
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
050-5603 Rev B
V
Isolation
, RMS Voltage (50-60 Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Minute) = 2500 Volts Minimum
ISOTOP® is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592