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MXP1125
Photovoltaic By-Pass Diode
50 Volts, 1.0 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
KEY FEATURES
DESCRIPTION
Oxide passivated structure for
very low leakage currents
Epitaxial structure minimizes
forward voltage drop
Anode and cathode contacts on
same side
Forward voltage decreases with
radiation exposure
Qualified for space applications
Thin construction for fit with
photovoltaic cells
W W W. Microsemi .COM
Large area diode chip for medium current photovoltaic bypass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents. A
version with attached leads is available.
APPLICATIONS/BENEFITS
APPLICATIONS/BENEFITS
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
MAXIMUM RATINGS @ 25°C (UNLESS OTHERWISE SPECIFIED)
Description
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc≤ 135°C
Junction Temperature Range
Storage Temperature Range
Symbol
Max.
Unit
VRRM
VRWM
VR
IF(ave)
Tj
Tstg
50
50
50
1.0
-65 to +150
-65 to +200
Volts
Volts
Volts
Amps
°C
°C
ELECTRICAL PARAMETERS
Description
Reverse (Leakage)
Current (in dark)
Copyright  2002
MXP1125.PDF, 2002-05-01
Conditions
IR25
IR25
VF1
VF2
Cj1
BVR
VR= 4 Vdc, Ta= 25°C
VR= 50 Vdc, Ta= 25°C
IF= 1 A, Ta= 25°C
IF= 3.5 A, Ta= 25°C
VR= 4 Vdc
IR= 200 µA, Ta= 25°C
Min
Typ.
50
5
20
850
940
600
90
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Max
Unit
200
1000
1000
1000
nA
nA
mV
mV
pF
V
Page 1
MXP1125
Forward Voltage
pulse test, pw= 300 µs
Junction Capacitance
Breakdown Voltage
Symbol
MXP1125
Photovoltaic By-Pass Diode
50 Volts, 1.0 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
W W W. Microsemi .COM
Mechanical Outline
MXP1125 physical dimensions
120
93
anode
cathode
mils = 0.001 inches
R = 5.0, 8 pl.
29
0
0
24
88
159
233 250
mils = 0.001 inches
vertical dimensions in micrometers
132
130
125
electronic glass
silver metallization
5
Copyright  2002
MXP1125.PDF, 2002-05-01
MECHANICALS
0
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 2
MXP1125
Photovoltaic By-Pass Diode
50 Volts, 1.0 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
W W W. Microsemi .COM
MXP1125 typical forward characteristic
1.E+01
3
4
2
1.E+00
1
If (amperes)
0.5
1.E- 01
0.1
1.E- 02
0.01
1.E- 03
.
0.001
0.0005
1.E- 04
0.40
0.0001
0.45
0.50
0.55
0.60
0.65
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
Vf (volts)
MXP1125 typical capacitance vs. voltage characteristic
1000
pF 800
600
GRAPHS
400
0
Copyright  2002
MXP1125.PDF, 2002-05-01
10
20
30
40
Vr (volts)
50
60
70
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
80
Page 3
MXP1125
Photovoltaic By-Pass Diode
50 Volts, 1.0 Amps
SANTA ANA DIVISION
P RODUCT P REVIEW
W W W. Microsemi .COM
NOTES
NOTES
Copyright  2002
MXP1125.PDF, 2002-05-01
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 4