Document No.001-93068 Rev. ** ECN # 4414926 Cypress Semiconductor Product Qualification Report QTP# 132402 June, 2014 CX3 Device Family LL65H-25ODR Technology, UMC Fab 12A CYUSB306X EZ-USB(R) CX3: MIPI CSI-2 to Superspeed USB Bridge Controller FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Rene Rodgers Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 16 Document No.001-93068 Rev. ** ECN # 4414926 PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 091706 Qualification of 65nm (LL65) Technology at UMC Fab 12A and New Device CY7C1553K Base Die Product Family Aug 2009 102402 Qualification of USB3.0 (CYUSB3014, CYUSB3021, CYWB0163BB, CYWB0263BB) Device in UMC LL65H-25ODR Dec 2011 132402 Qualification of 7C03064/065 (CX3) Device in LL65H-25ODR Technology at UMC-12A June 2014 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 16 Document No.001-93068 Rev. ** ECN # 4414926 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Marketing Part #: Qualification of 7C03064/065 (CX3) Device in LL65H-25ODR Technology at UMC-12A CYUSB306X Device Description: EZ-USB(R) CX3: MIPI CSI-2 to Superspeed USB Bridge Controller Cypress Division: Cypress Semiconductor Corporation –Data Communication Division TECHNOLOGY/FAB PROCESS DESCRIPTION – LL65H-25ODR Number of Metal Layers: 6 Metal Metal 1: Cu 0.18um, (0.09/0.09um) Composition: Metal 2: Cu 0.22um Metal 3: Cu 0.22um Metal 4: Cu 0.22um Metal 5: Cu 0.36um Metal 6: Cu 1.25um Passivation Type and Materials: 0.4um Oxide / 0.5um Nitride Generic Process Technology/Design Rule (µ-drawn): CMOS, 65nm Gate Oxide Material/Thickness (MOS): 19.5A EOT Nitride Oxide Name/Location of Die Fab (prime) Facility: UMC Fab 12 Die Fab Line ID/Wafer Process ID: LL65H-25ODR PACKAGE AVAILABILITY PACKAGE WIRE MATERIAL ASSEMBLY FACILITY SITE QTP NUMBER 121 FBGA Au ASE-Taiwan 132403 Note: Package Qualification details upon request. 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Page 3 of 16 Document No.001-93068 Rev. ** ECN # 4414926 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: BK121 (BK0AB) Package Outline, Type, or Name: 121 Ball Grid Array, Chip Scale Package (FBGA), 10x10x1.7mm) Mold Compound Name/Manufacturer: KE-G2270/Kyocera Mold Compound Flammability Rating: V-0 Mold Compound Alpha Emission Rate: < 0.1 Oxygen Rating Index: >28% 34 Lead Frame Designation: N/A Lead Frame Material: N/A Substrate Material: BT Resin Lead Finish, Composition / Thickness: SAC105 Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Saw Process Die Attach Supplier: Bond Diagram Designation Ablestik ATB125 (Top) ABL 2100A (Bottom) 001-87519 Wire Bond Method: Thermosonic Wire Material/Size: 0.8 mil /Au Wire Thermal Resistance Theta JA °C/W: 24.4 °C /W Package Cross Section Yes/No: No Assembly Process Flow: 001-90724 Name/Location of Assembly (prime) facility: ASE-Taiwan (G) MSL Level 3 Reflow Profile 260C Die Attach Material: ELECTRICAL TEST / FINISH DESCRIPTION Test Location: ASE-G Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 16 Document No.001-93068 Rev. ** ECN # 4414926 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F Dynamic Operating Condition, Boost Regulated at Core 1.45V, External 2.05V, 125°C Dynamic Operating Condition, 125°C, 3.795V JESD22-A108 Dynamic Operating Condition, Boost Regulated at Core 1.45V, External 2.05V, 125°C /150°C Dynamic Operating Condition, 125°C, 3.795V JESD22-A108 P Pre/Post LFR AC/DC Char AC/DC Critical Parameter Char at LFR 80hrs, 500hrs & 1000hrs P High Temperature Steady State Life Static Operating Condition, Vcc Max= 2.25V, 150°C JESD22-A108 P Low Temperature Operating Life Dynamic Operating Condition,Vcc = 2.25V /4.29V,-30°C, f=4MHz JESD22-A108 P High Temperature Operating Life Early Failure Rate High Temperature Operating Life Latent Failure Rate High Accelerated Saturation Test (HAST) Temperature Humidity Bias Test (THB) Temperature Cycle Pressure Cooker JEDEC STD 22-A110: 130°C, 85%RH, 2.25V / 3.63V Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) JESD22-A101: 85°C, 85%RH, 2.25V Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) MIL-STD-883, Method 1010, Condition C, -65 C to 150 C Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) JESD22-A102, 121 C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) P P P P P High Temperature Storage JESD22-A103:150°C ± 5°C, no bias Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114 Electrostatic Discharge Charge Device Model (ESD-CDM) 500V, JESD22-C101 Electrostatic Discharge Machine Model (ESD-MM) 200V, JESD22-A115 P Soft Error (Alpha Particle) JESD89 P Soft Error (Neutron/Proton) JESD89 P Current Density Meets the Technology Device Level Reliability Specifications P Age Bond Strength 200°C, 4HRS MIL-STD-883, Method 883-2011 P Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level (192 Hrs., 30°C, 60% RH, 260C Reflow) P Constructional Analysis Dynamic Latch-Up Static Latch-Up Criteria: Meet external and internal characteristics of Cypress package In accordance with JESD78 125C, ± 200mA, + 140mA, accordance with JESD78 85C,+/-140mA Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 16 P P P P P P Document No.001-93068 Rev. ** ECN # 4414926 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate High Temperature Operating Life Early Failure Rate 3,222 Devices 0 N/A N/A 0 PPM High Temperature Operating Life Long Term Failure Rate (150°C) 200,500 DHRs 0 0.7 170 High Temperature Operating Life Long Term Failure Rate (125°C) 891,500 DHRs 0 0.7 55 1 2 3 11 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 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Page 6 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 15 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 15 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 15 0 STRESS: ACOUSTIC, MSL3 STRESS: AGE BOND STRENGTH CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 5 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 5 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 5 0 610417278 CML-R COMP 3 0 STRESS: DYNAMIC LATCH-UP CY7C1470V33 (7C1470A) 4321389 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,200V CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 8 0 CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 9 0 610852338 TAIWN-G COMP 5 0 STRESS: ESD-MACHINE MODEL, 200V CY7C1514KV18 (7C1553K) 8842022 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 2.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 128 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 128 77 0 TAIWN-G 1000 70 0 336 77 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CY7C1514KV18 (7C1553K) 8844020 610851583 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 150C, 2.25V, Vcc Max CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C15631KV18 (7C1553K) 8908001 610920385 TAIWN-G 96 2367 0 CY7C15631KV18 (7C1553K) 8912000 610920386 TAIWN-G 96 2217 0 CY7C15631KV18 (7C1553K) 8910015 610920548 TAIWN-G 96 1321 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 150C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G 500 178 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, BOOST REGULATED AT CORE 1.45V, EXTERNAL 2.05V CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 1000 178 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 1000 178 0 STRESS: LOW TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, -30C, 2.25V Vcc CY7C1514KV18 (7C1553K) 8842022 610852338 TAIWN-G 500 45 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 168 76 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 168 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 168 77 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G COMP 10 0 STRESS: STATIC LATCH-UP TESTING, 125C, 3.42V, +/-240mA CY7C1514KV18 (7C1553K) 8844020 610854680 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G COMP 9 0 CY7C1514KV18 (7C1553K) 8844021 610908348 TAIWN-G COMP 9 0 CY7C15631KV18 (7C1553K) 8911000 610922436 TAIWN-G COMP 9 0 STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 1000 77 0 CY7C1514KV18 (7C1553K) 8844020 610854240 TAIWN-G 1000 78 0 CY7C1514KV18 (7C1553K) 8844022 610906896 TAIWN-G 1000 77 0 STRESS: STRESS: TEMPRATURE HUMIDITY TEST, 85C, 85%RH, 2.25V, PRE COND 192 HR 30C/60%RH, MSL3 CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 091706 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom CY7C1514KV18 (7C1553K) 8842022 610851583 TAIWN-G COMP 3 610851583 TAIWN-G COMP 1WF 0 STRESS: X-SECTION/STEM XY AUDIT CY7C1514KV18 (7C1553K) 8842022 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 102402 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 15 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA COMP 14 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN COMP 15 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA COMP 15 0 STRESS: ACOUSTIC, MSL3 STRESS: AGE BOND STRENGTH CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 3 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA COMP 3 0 STRESS: CONSTRUCTIONAL ANALYSIS CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 5 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA COMP 5 0 611140448 CML-RA COMP 3 0 STRESS: DYNAMIC LATCH-UP CYUSB3014 (7C07201AO) 8117021 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,200V CYUSB3014 (7C07201AO) 8117021 611140448 CML-RA COMP 8 0 CYUSB3014 (7C07201AO) 8125000 611150816 CML-RA COMP 8 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CYUSB3014 (7C07201AO) 8117021 611140448 CML-RA COMP 9 0 CYUSB3014 (7C07201AO) 8125000 611150816 CML-RA COMP 9 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 128 78 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 128 81 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 256 81 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 500 82 0 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 1000 82 0 STRESS: LOW TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, -30C, 4.29V Vcc CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 500 78 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 10 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 102402 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.795V CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 96 3195 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 96 3370 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 96 2519 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA 96 1008 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 125C, 3.795V CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 500 176 0 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 1000 175 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 168 180 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 1000 180 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 168 180 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 1000 180 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 168 82 0 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 288 82 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA 168 82 0 CYUSB3014 (7C07201AO) 8103023 611135559 CML-RA 288 82 0 STRESS: STATIC LATCH-UP TESTING, 125C, 1.88V, 5.4V, 9V, +/-140mA CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 6 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA COMP 6 0 CYUSB3014 (7C07201AO) 8117021 611140448 CML-RA COMP 6 0 CYUSB3014 (7C07201AO) 8125000 611150816 CML-RA COMP 6 0 STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 500 81 0 CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA 1000 81 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 500 77 0 CYUSB3014 (7C07201AO) 8103024 611127694 CML-RA 1000 77 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 500 80 0 CYUSB3014 (7C07201AO) 8112001 611134663 GQ-TAIWAN 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 102402 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS : SER – ALPHA PARTICLE, 3-TEPM, 3-VOLTAGE, @ 85C, Vcc Nom CYUSB3014 (7C07201AO) 8103023 611119246 CML-RA COMP 611119246 CML-RA COMP 2 0 STRESS: X-SECTION/STEM XY AUDIT CYUSB3014 (7C07201AO) 8103023 1 WFR 0 Company Confidential A printed copy of this document is considered uncontrolled. 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Page 12 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 132402 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN COMP 15 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN COMP 15 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN COMP 15 0 STRESS: ACOUSTIC, MSL3 STRESS: AGED BOND STRENGTH CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN COMP 3 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN COMP 3 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN COMP 3 0 611328882 G-TAIWAN COMP 5 0 STRESS: CONSTRUCTIONAL ANALYSIS CYUSB3065 (7C03065A) 9315010 STRESS: ESD-CHARGE DEVICE MODEL, 500V CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN COMP 9 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN COMP 9 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN COMP 9 0 CYUSB3065 (7C03065A) 9315009 611341629 G-TAIWAN COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 1,100V CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN COMP 3 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN COMP 3 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 2,200V CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN COMP 8 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN COMP 8 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN COMP 8 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114, 3,300V CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN COMP 3 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN COMP 3 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN COMP 3 0 CYUSB3065 (7C03065A) 9315009 611341629 G-TAIWAN COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 132402 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-MACHINE MODEL, 200V CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN COMP 5 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN COMP 5 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN COMP 5 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN 128 80 0 CYUSB3065 (7C03065A) 9315010 611328318 G-TAIWAN 128 78 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN 128 80 0 CYUSB3065 (7C03065A) 9315009 611341629 G-TAIWAN 128 78 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.795V CYUSB3065 (7C03065A) 9315010 611328318 G-TAIWAN 48 1050 0 CYUSB3065 (7C03065A) 9315010 611332767 G-TAIWAN 48 1173 0 CYUSB3065 (7C03065A) 9315009 611341629 G-TAIWAN 48 999 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 150C, 3.795V CYUSB3065 (7C03065A) 9315010 611328318 G-TAIWAN 80 79 0 CYUSB3065 (7C03065A) 9315010 611328318 G-TAIWAN 500 76 0 CYUSB3065 (7C03065A) 9315010 611332767 G-TAIWAN 80 80 0 CYUSB3065 (7C03065A) 9315010 611332767 G-TAIWAN 500 74 0 CYUSB3065 (7C03065A) 9315009 611341629 G-TAIWAN 80 81 0 CYUSB3065 (7C03065A) 9315009 611341629 G-TAIWAN 500 73 0 STRESS: HIGH TEMPERATURE STORAGE, PLASTIC, 150C CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN 500 80 0 CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN 1000 80 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN 500 80 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN 1000 80 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN 500 80 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Reliability Test Data QTP #: 132402 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: LOW TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, -30C, 2.25V / 4.29V CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN 500 231 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, 15 Psig, PRE COND 192 HR 30C/60%RH, MSL3 CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN 168 80 0 CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN 288 80 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN 168 80 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN 288 79 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN 168 80 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN 288 80 0 STRESS: Pre-/ Post HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE CHAR CYUSB3065 (7C03065A) 9315010 611328318 G-TAIWAN COMP 32 0 CYUSB3065 (7C03065A) 9315010 611332767 G-TAIWAN COMP 32 0 CYUSB3065 (7C03065A) 9315009 611341629 G-TAIWAN COMP 25 0 STRESS: STATIC LATCH-UP TESTING, 85C,+/-140mA CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN COMP 6 0 CYUSB3065 (7C03065A) 9315010 611332767 G-TAIWAN COMP 6 0 CYUSB3065 (7C03065A) 9315009 611341629 G-TAIWAN COMP 6 0 STRESS: TEMPERATURE CYCLE COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH, MSL3 CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN 500 95 0 CYUSB3065 (7C03065A) 9315010 611328882 G-TAIWAN 1000 95 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN 500 80 0 CYUSB3064 (7C030654A) 9315010 611328378 G-TAIWAN 1000 79 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN 500 80 0 CYUSB3064 (7C030654A) 9315010 611332768 G-TAIWAN 1000 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 16 Document No.001-93068 Rev. ** ECN # 4414926 Document History Page Document Title: QTP#132402: CX3 DEVICE FAMILY (CYUSB306X) LL65H-25ODR TECHNOLOGY,UMC FAB 12A QUALIFICATION REPORT 001-93068 Document Number: Rev. ECN No. ** 4414926 Distribution: WEB Posting: Orig. of Change JYF Description of Change Initial release. None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 16