QTP#121306:HX3 DEVICE FAMILY (CYUSB33XX) LL65H-25ODR TECHNOLOGY,UMC FAB 12A QUALIFICATION REPORT

Document No.001-91243 Rev. *B
ECN # 4779540
Cypress Semiconductor
Product Qualification Report
QTP# 121306 VERSION*B
May, 2015
HX3 Device Family
LL65H-25ODR Technology, UMC Fab 12A
CYUSB33XX
HX3 USB 3.0 HUB
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda (JYF)
Reliability Engineer
Reviewed By:
Rene Rodgers (RT)
Reliability Manager
Approved By:
Don Darling (DCDA)
Reliability Director
Company Confidential
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Page 1 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
PRODUCT QUALIFICATION HISTORY
QTP
Number
Description of Qualification Purpose
Date
121306
Qualification of HX3 USB3.0 HUB Device 7C07500A in LL65H-25ODR
Technology at UMC-12A.
Sept.2013
134101
Qualification of HX3 USB3.0 HUB Device 7C07500A Rev.*A Silicon
in LL65H-25ODR Technology at UMC-12A
Dec. 2013
142202
Qualification of HX3 USB3.0 HUB Device 7C07500A Rev.*C Silicon
in LL65H-25ODR Technology at UMC-12A
Aug.2014
151408
Qualification of HX3 USB3.0 HUB Device 7C07500A Rev.*D Silicon
in LL65H-25ODR Technology at UMC-12A
May 2015
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Page 2 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
PRODUCT DESCRIPTION
Qualification Purpose: Qualify HX3 USB3.0 HUB Device 7C07500A in LL65H-25ODR Technology at UMC-12A
Marketing Part #:
CYUSB33XX
Device Description:
USB HUB Controllers
Cypress Division:
Cypress Semiconductor Corporation – Data Communication Division
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
M1 : CU 1.2KA , 100%CU
M2 : CU 1.75KA, 100%CU
M3 : CU 1.85KA, 100%CU
M4 : CU 1.85KA, 100%CU
M5 : CU 3.5KA, 100%CU
M6 : CU 10.1KA, 100%CU
SIN 0.07 um + Oxide 1.2 um + PSG 0.4 um + SIN 0.5 um
6
Metal Composition:
Passivation Type and Thickness:
Generic Process Technology/Design Rule (-drawn): 65nm
Gate Oxide Material/Thickness (MOS):
20 - 55 Angstrom
Name/Location of Die Fab (prime) Facility:
UMC Fab 12A
Die Fab Line ID/Wafer Process ID:
LL65H-25ODR
PACKAGE AVAILABILITY
PACKAGE
WIRE MATERIAL
ASSEMBLY FACILITY SITE
QTP NUMBER
68 QFN
CuPd
CML-RA
124702
68 & 88 QFN
CuPd
ASE-G
124301
Note: Package Qualification details upon request.
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Page 3 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
LT68C
Package Outline, Type, or Name:
Quad Flat No Lead (QFN)
Mold Compound Name/Manufacturer:
Sumitomo / GE7470
Mold Compound Flammability Rating:
V-0 UL94
Mold Compound Alpha Emission Rate:
<0.1
Oxygen Rating Index: >28%
54
Lead Frame Designation:
RMP
Lead Frame Material:
Copper
Substrate Material:
N/A
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
Wafer Saw
Die Attach Supplier:
Dexter
Die Attach Material:
QMI 519
Bond Diagram Designation
001-84296
Wire Bond Method:
Thermosonic
Wire Material/Size:
0.8mil / CuPd
Thermal Resistance Theta JA C/W:
15.92
Package Cross Section Yes/No:
Y
Assembly Process Flow:
11-21099
Name/Location of Assembly (prime) facility:
CML-RA
MSL LEVEL
3
REFLOW PROFILE
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA, ASE-G
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 4 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
Result
P/F
Electrostatic Discharge
Charge Device Model (ESD-CDM)
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260C Reflow)
500V/1000V/1250V
JESD22-C101
Electrostatic Discharge
Human Body Model (ESD-HBM)
1100V/2200V/2700V/3000V/3300V
JESD22, Method A114
P
High Temperature Operating Life
Dynamic Operating Condition, Vcc = 3.77V, 140C
JESD22-A108
P
Acoustic Microscopy
Early Failure Rate
High Temperature Operating Life
Latent Failure Rate
Pressure Cooker Test
Static Latch-up
Temperature Cycle
Dynamic Operating Condition, Vcc = 3.77V, 140C
JESD22-A108
JESD22-A102, 121C, 100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260C Reflow)
85C,+/- 140mA
85C,+/- 200mA
125C,+/- 140mA
JESD 78
MIL-STD-883, Method 1010, Condition C, -65C to 150C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30C, 60% RH, 260C Reflow)
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Page 5 of 12
P
P
P
P
P
P
Document No.001-91243 Rev. *B
ECN # 4779540
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
High Temperature Operating Life
Early Failure Rate
1,533
0
N/A
N/A
0 PPM
High Temperature Operating Life
Long Term Failure Rate
98,400 DHRs
0
0.7
170
85 FIT**
1
2
3
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T 2 is the junction temperature of the
device at use conditions.
**Insufficient samples to calculate FIT Rate.
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Page 6 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
Reliability Test Data
QTP #: 121306
Device
Package
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp Rej Failure Mechanism
STRESS: ACOUSTIC, MSL3
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
COMP
15
0
611321399
CML-RA
COMP
9
0
611321399
CML-RA
COMP
3
0
611321399
CML-RA
COMP
3
0
COMP
3
0
COMP
8
0
COMP
3
0
1533
0
STRESS: ESD-CHARGE DEVICE MODEL(500V)
CYUSB3304 (7CP07501A)
LT68C
9313002
STRESS: ESD-CHARGE DEVICE MODEL(1,000V)
CYUSB3304 (7CP07501A)
LT68C
9313002
STRESS: ESD-CHARGE DEVICE MODEL(1,250V)
CYUSB3304 (7CP07501A)
LT68C
9313002
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (1,100V)
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (3,300V)
CYUSB3304 (7CP07501A)
STRESS:
LT68C
9313002
611321399
CML-RA
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (140C, 3.77V, Vcc Max)
CYUSB3304 (7CP07501B)
LT68C
9313002
611317473
CML-RA
72
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (140C, 3.77V, Vcc Max)
CYUSB3304 (7CP07501B)
LT68C
9313002
611317473
CML-RA
96
164
0
CYUSB3304 (7CP07501B)
LT68C
9313002
611317473
CML-RA
500
164
0
CYUSB3304 (7CP07501B)
LT68C
9313002
611317473
CML-RA
600
164
0
STRESS: PRE/POST LFR PARAMATER ASSESSMENT
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
0
30+2
0
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
600
30+2
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
168
77
0
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
288
77
0
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Page 7 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
Reliability Test Data
QTP #: 121306
Device
Package
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp Rej Failure Mechanism
STRESS: STATIC LATCH-UP TESTING (85C, 1.89/5.44/7.84V, +/-140mA)
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
COMP
3
0
STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C), PRE COND 192 HR 30C/60%RH (MSL3)
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
500
78
0
CYUSB3304 (7CP07501A)
LT68C
9313002
611321399
CML-RA
1000
77
0
Company Confidential
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Page 8 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
Reliability Test Data
QTP #: 134101
Device
Package
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp Rej Failure Mechanism
STRESS: ESD-CHARGE DEVICE MODEL(500V)
CYUSB3304 (7CP07501A)
LT68B
9314001
611341922
CML-RA
COMP
9
0
CYUSB3314 (7CP07500A)
LT68B
9314001
611341921
CML-RA
COMP
9
0
STRESS: ESD-CHARGE DEVICE MODEL(1,000V)
CYUSB3304 (7CP07501A)
LT68B
9314001
611341922
CML-RA
COMP
3
0
CYUSB3314 (7CP07500A)
LT68B
9314001
611341921
CML-RA
COMP
3
0
STRESS: ESD-CHARGE DEVICE MODEL(1,250V)
CYUSB3304 (7CP07501A)
LT68B
9314001
611341922
CML-RA
COMP
3
0
CYUSB3314 (7CP07500A)
LT68B
9314001
611341921
CML-RA
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (1,100V)
CYUSB3304 (7CP07501A)
LT68B
9314001
611342152
CML-RA
COMP
3
0
CYUSB3314 (7CP07500A)
LT68B
9314001
611341921
CML-RA
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CYUSB3304 (7CP07501A)
LT68B
9314001
611342152
CML-RA
COMP
8
0
CYUSB3314 (7CP07500A)
LT68B
9314001
611341921
CML-RA
COMP
8
0
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (3,300V)
CYUSB3304 (7CP07501A)
LT68B
9314001
611342152
CML-RA
STRESS: STATIC LATCH-UP TESTING (85C, 1.98V/5.44V/7.87V, +/-140mA)
CYUSB3304 (7CP07501A)
LT68B
9314001
611342152
CML-RA
COMP
6
0
CYUSB3314 (7CP07500A)
LT68B
9314001
611341921
CML-RA
COMP
6
0
Company Confidential
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Page 9 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
Reliability Test Data
QTP #: 142202
Device
Package
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp Rej Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (1,100V)
CYUSB3304 (7CP07501C)
LT68B
9340014
611429262
CML-RA
COMP
3
0
CYUSB3314 (7CP07500C)
LT88B
9340014
611429086
G-Taiwan
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CYUSB3304 (7CP07501C)
LT68B
9340014
611429262
CML-RA
COMP
8
0
CYUSB3314 (7CP07500C)
LT88B
9340014
611429086
G-Taiwan
COMP
8
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,700V)
CYUSB3304 (7CP07501C)
LT68B
9340014
611429262
CML-RA
COMP
3
0
CYUSB3314 (7CP07500C)
LT88B
9340014
611429086
G-Taiwan
COMP
3
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (3,000V)
CYUSB3304 (7CP07501C)
LT68B
9340014
611429262
CML-RA
COMP
3
0
CYUSB3314 (7CP07500C)
LT88B
9340014
611429086
G-Taiwan
COMP
3
0
COMP
6
0
COMP
3
0
3
0
STRESS: STATIC LATCH-UP TESTING (85C, 1.89V/5.44V/7.87V, +/-140mA)
CYUSB3304 (7CP07501C)
LT68B
9340014
611429262
CML-RA
STRESS: STATIC LATCH-UP TESTING (85C, 1.89V/5.44V/7.87V, +/-200mA)
CYUSB3304 (7CP07501C)
LT68B
9340014
611429262
CML-RA
STRESS: STATIC LATCH-UP TESTING (125C, 1.89V/5.44V/7.87V, +/-140mA)
CYUSB3304 (7CP07501C)
LT68B
9340014
611429262
CML-RA
COMP
LT68B
9314001
611342152
CML-RA
COMP
EQUIVALENT
LT68B
9314001
611342152
CML-RA
COMP
EQUIVALENT
YIELD: SORT
CYUSB3304 (7CP07501A)
YIELD: CLASS
CYUSB3304 (7CP07501A)
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Page 10 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
Reliability Test Data
QTP #: 151408
Device
Package
Fab Lot #
Assy Lot #
Assy Loc
Duration
Samp Rej Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (1,100V)
CYUSB3304 (7CP07501D)
LT68B
9509001
611515436
CML-RA
COMP
3
0
COMP
8
0
COMP
3
0
COMP
3
0
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CYUSB3304 (7CP07501D)
LT68B
9509001
611515436
CML-RA
STRESS: STATIC LATCH-UP TESTING (85C, 1.89V/5.44V/7.87V, +/-140mA)
CYUSB3304 (7CP07501D)
LT68B
9509001
611515436
CML-RA
STRESS: STATIC LATCH-UP TESTING (85C, 2.08V/5.99V/8.66V, +/-200mA)
CYUSB3304 (7CP07501D)
LT68B
9509001
611515436
CML-RA
STRESS: STATIC LATCH-UP TESTING (125C, 1.89V/5.44V/7.87V, +/-140mA)
CYUSB3304 (7CP07501D)
LT68B
9509001
611515436
CML-RA
COMP
3
LT68B
9509001
611515436
CML-RA
COMP
EQUIVALENT
CYUSB3304 (7CP07501D)
LT68B
9509001
611515436
CML-RA
COMP
EQUIVALENT
CYUSB3314 (7CP07500D)
LT88B
9509001
611515245
CML-RA
COMP
EQUIVALENT
YIELD: SORT
CYUSB3304 (7CP07501D)
YIELD: CLASS
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Page 11 of 12
Document No.001-91243 Rev. *B
ECN # 4779540
Document History Page
Document Title:
QTP#121306: HX3 DEVICE FAMILY (CYUSB33XX) LL65H-25ODR TECHNOLOGY,UMC FAB
12A QUALIFICATION REPORT
001-91243
Document Number:
Rev. ECN
Orig. of
No.
Change
**
4293693
JYF
*A 4481271
JYF
*B
4779540
JYF
Description of Change
Initial release.
Updated QTP title page for template alignment.
Added HX3 Rev.*C qualification data (QTP#142202).
Updated reference for Reliability Director in QTP title page;
Added HX3 Rev.*D qualification data (QTP#151408).
Distribution: WEB
Posting:
None
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Page 12 of 12