Encore Device Family, S8di-5r Technology, Fab 4 Qualification Report.pdf

Document No. 001-81646 Rev. *C
ECN #: 4900058
Cypress Semiconductor
Product Qualification Report
QTP # 090808 VERSION*C
August 2015
enCoRe Device Family
S8DI-5R Technology, Fab 4
CY7C64345
CY7C6431x
CY7C6435x
CY7C64315
CY7C64316
enCoRe (TM) V FULL SPEED USB
CONTROLLER
enCoRe (TM) V FULL SPEED USB
MICROCONTROLLER DIE/WAFER
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda (JYF)
Reliability Engineer
Reviewed By:
Rene Rodgers (RT)
MTS Reliability Engineer
Approved By:
Don Darling (DCDA)
Reliability Director
Company Confidential
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Page 1 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
PRODUCT QUALIFICATION HISTORY
QTP
Number
083401
090808
091801
Description of Qualification Purpose
Qualify SONOS S8DI-5R Technology in Fab 4 using PsoC 8C20066BC
Krypton Device
Qualify CY7C64345 Device on S8DI-5R Technology
Qualify 2um Top Metal-3 Process on S8DI-5R Technology at CMI
Using Krypton (8C20066EC) Rev. E1 (Note: For marketing part number
with ‘A’)
Company Confidential
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Page 2 of 12
Date
Jan 09
May 09
Sep 09
Document No. 001-81646 Rev. *C
ECN #: 4900058
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: enCoRe V Device Qualification on S8 (S8DI-5R) Technology in Fab4
Marketing Part #:
CY7C64345, CY7C6431x, CY7C6435x
Device Description:
Full Speed USB Microcontroller System
Cypress Division:
Cypress Semiconductor – Data Communication Division
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
3
Metal Composition:
Metal 1: 100A Ti/3,200A Al 0.5% Cu/300A TiW
Metal 2: 100A Ti/3,200A Al 0.5% Cu/300A TiW
Metal 3:
Pad: 500A Ti / 20000A Al 0.5% Cu
Non Pad: 500A Ti / 20000A Al 0.5%Cu / 300 A TiW
4,000A TEOS /7,000A Si3N4
Passivation Type and Thickness:
Generic Process Technology/Design Rule (-drawn): 1P3M, 0.15 um
SiO2 / 110A & SiO2 / 32A
Gate Oxide Material/Thickness (MOS):
Name/Location of Die Fab (prime) Facility:
Fab 4, CMI-Minnesota
Die Fab Line ID/Wafer Process ID:
S8DIN-5R
PACKAGE AVAILABILITY
ASSEMBLY FACILITY SITE
PACKAGE
32 and 48-Lead QFN
MALAYSIA-CA
16-Lead QFN
AMKOR-MB
Wafer Sales/ Die Sales
N/A
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Page 3 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
LQ32
Mold Compound Flammability Rating:
32 Saw Quad Flat No Lead (QFN)
EME-G770 / Sumitomo
V-O per UL94
Oxygen Rating Index:
None
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
Blade Sawing
Die Attach Supplier:
Henkel
Die Attach Material:
QMI509
Die Attach Method:
Die Attach Epoxy
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au. 1.0 mil
Thermal Resistance Theta JA °C/W:
22.17
Package Cross Section Yes/No:
N/A
Name/Location of Assembly (prime) facility:
Carsem-Malaysia
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-R
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 4 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life
Latent Failure Rate
High Temperature Steady State life
Low Temperature Operating Life
High Accelerated Saturation Test (HAST)
Temperature Cycle
Pressure Cooker
Acoustic Microscopy
Age Bond Strength
Test Condition (Temp/Bias)
Dynamic Operating Condition, Vcc Max=2.1V, 150°C
JESD22-A108
Dynamic Operating Condition, Vcc Max=2.1V, 150°C
JESD22-A108
Static Operating Condition, Vcc Max=2.1V, 150°C
JESD22-A108
Dynamic Operating Condition, Vcc Max=2.1V, -30°C
JESD22-A108
JEDEC STD 22-A110: 130°C, 5.25V, 85%RH
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C
JESD22-A102: 121°C, 100%RH, 15 Psig
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C
200C, 4hrs
MIL-STD-883, Method 883-2011
Result
P/F
P
P
P
P
P
P
P
P
P
Ball Shear
JESD22-B116
P
Constructional Analysis
Criteria: Meet external and internal characteristics of
Cypress package
P
Current Density
Meets the Technology Device Level Reliability Specifications
P
150°C, No Bias
JESD22-A117 and JESD22-A103
125C, 8.5V
JESD 78
Data Retention
Dynamic Latch-up
P
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
JESD22, Method A114
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V
JESD22-C101
P
Endurance Test
MIL-STD-883, Method 883-1033
P
Static Latch-up
125C, +/- 200mA
JESD 78
P
SEM Analysis
MIL-STD-883, Method 2018
P
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Page 5 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
High Temperature Operating Life
Early Failure Rate
5,516 Devices
1
N/A
N/A
181 PPM
High Temperature Operating Life1,2
Long Term Failure Rate
585,000 DHRs
0
0.7
170
9 FIT
3
3
3
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
K = Boltzmann’s constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T 2 is the junction temperature of the
device at use conditions.
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Page 6 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
Reliability Test Data
QTP #: 090808
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY7C64345
4810486
610828990
Malaysia-CA COMP
15
0
CY7C64345
4815537
610834184
Malaysia-CA COMP
15
0
CY7C64345
4835945
610847274
Malaysia-CA COMP
15
0
STRESS: AGE BOND STRENGTH
CY7C64345
4827949
610844164
CML-R
COMP
3
0
CY7C64345
4804681
610822808
Malaysia-CA COMP
3
0
CY7C64345
4836589
610852813
Malaysia-CA COMP
3
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY7C64345
4815537
610834184
Malaysia-CA 500
77
0
CY7C64345
4815537
610834184
Malaysia-CA 1000
77
0
CY7C64345
4835945
610847274
Malaysia-CA 500
78
0
CY7C64345
4835945
610847274
Malaysia-CA 1000
78
0
CY7C64345
4836589
610851914
CML-R
500
78
0
CY7C64345
4836589
610851914
CML-R
1000
78
0
CY7C64345
4810486
610830786
CML-R
168
77
0
CY7C64345
4815537
610835437
CML-R
168
77
0
CY7C64345
4827949
610844164
CML-R
168
79
0
CY7C64345
4835945
610848270
CML-R
168
78
0
CY7C64345
4836589
610851914
CML-R
168
76
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY7C64345
4810486
610830371
CML-R
500
9
0
CY7C64345
4815537
610834184
Malaysia-CA 500
9
0
CY7C64345
4835945
610847274
Malaysia-CA 500
9
0
N/A
N/A
1
0
STRESS:
CY7C64345
SEM CROSS SECTION
4810486
COMP
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Page 7 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
Reliability Test Data
QTP #: 090808
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: STATIC LATCH-UP (85C, 8.25V)
CY7C64345
4835945
610847274
Malaysia-CA COMP
6
0
CY7C64345
4836589
610852813
Malaysia-CA COMP
6
0
CY7C64345
4837410
410.23.02
Promex
6
0
COMP
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CY7C64345
4810486
610830371
CML-R
2200
8
0
CY7C64345
4815537
610834184
Malaysia-CA 2200
8
0
CY7C64345
4835945
610847274
Malaysia-CA 2200
8
0
STRESS: DYNAMIC LATCH-UP (125C, 8.5V)
CY7C64345
4810486
610828990
Malaysia-CA COMP
5
0
CY7C64345
4815537
610834184
Malaysia-CA COMP
5
0
CY7C64345
4835945
610847274
Malaysia-CA COMP
5
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY7C64345
4827949
610844164
CML-R
48
1002
0
CY7C64345
4815537
610835437
CML-R
48
1008
0
CY7C64345
4835945
610847274
Malaysia-CA 48
1004
1
CY7C64345
4836589
610851747
Malaysia-CA 48
1004
0
STRESS:
Read NV Latch (1)
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max)
CY7C64345
4815537
610834184
Malaysia-CA 48
45
0
CY7C64345
4835945
610848270
CML-R
45
0
48
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max)
CY7C64345
4810486
610828990
Malaysia-CA 96
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max)
CY7C64345
4815537
610834184
Malaysia-CA 80
390
0
CY7C64345
4815537
610834184
Malaysia-CA 500
390
0
CY7C64345
4835945
610847274
Malaysia-CA 80
390
0
CY7C64345
4835945
610847274
Malaysia-CA 500
390
0
CY7C64345
4836589
610851747
Malaysia-CA 80
390
0
CY7C64345
4836589
610851747
Malaysia-CA 500
390
0
(1) Destroyed during failure analysis
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Page 8 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
Reliability Test Data
QTP #: 090808
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V)
CY7C64345
4810486
610828990
Malaysia-CA 80
77
0
CY7C64345
4810486
610828990
Malaysia-CA 168
77
0
CY7C64345
4815537
610834184
Malaysia-CA 80
77
0
CY7C64345
4815537
610834184
Malaysia-CA 168
77
0
CY7C64345
4835945
610848270
CML-R
80
77
0
CY7C64345
4835945
610848270
CML-R
168
77
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V
CY7C64345
4815537
610835437
CML-R
500
77
0
CY7C64345
4835945
610848270
CML-R
500
77
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3)
CY7C64345
4810486
610828990
Malaysia-CA 128
77
0
CY7C64345
4815537
610834184
Malaysia-CA 128
77
0
CY7C64345
4815537
610834184
Malaysia-CA 256
77
0
CY7C64345
4835945
610847274
Malaysia-CA 128
77
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY7C64345
4810486
610828990
Malaysia-CA 168
77
0
CY7C64345
4810486
610828990
Malaysia-CA 333
77
0
CY7C64345
4815537
610834184
Malaysia-CA 168
77
0
CY7C64345
4815537
610834184
Malaysia-CA 288
77
0
CY7C64345
4835945
610847274
Malaysia-CA 168
77
0
CY7C64345
4835945
610847274
Malaysia-CA 288
77
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY7C64345
4810486
610828990
Malaysia-CA 500
77
0
CY7C64345
4810486
610828990
Malaysia-CA 1000
77
0
CY7C64345
4815537
610834184
Malaysia-CA 500
77
0
CY7C64345
4815537
610834184
Malaysia-CA 1000
77
0
CY7C64345
4835945
610847274
Malaysia-CA 500
77
0
CY7C64345
4835945
610847274
Malaysia-CA 1000
77
0
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Page 9 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
Reliability Test Data
QTP #: 091801
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: AGED BOND
CY7C64345
4909973
610916428
Malaysia-CA COMP
3
0
CY7C64345
4909973
610921200
Malaysia-CA COMP
3
0
CY7C64345
4909973
610916429
Malaysia-CA COMP
10
0
CY7C64345
4909973
610921200
Malaysia-CA COMP
10
0
Malaysia-CA COMP
5
0
STRESS: BALL SHEAR
STRESS: CONSTRUCTIONAL ANALYSIS
CY7C64345
4909973
610916428
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY7C64345
4909973
610916428
Malaysia-CA
48
748
0
CY7C64345
4909973
610921200
Malaysia-CA
48
750
0
STRESS:
ESD-CHARGE DEVICE MODEL (500V)
CY7C64345
4909973
610916427
Malaysia-CA COMP
9
0
CY7C64345
4909973
610921200
Malaysia-CA COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY7C64345
4909973
610916427
Malaysia-CA COMP
8
0
CY7C64345
4909973
610921200
Malaysia-CA COMP
8
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3)
CY7C64345
4909973
610916428
Malaysia-CA
128
76
0
CY7C64345
4909973
610921200
Malaysia-CA
128
77
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY7C64345
4909973
610916428
Malaysia-CA
168
77
0
CY7C64345
4909973
610916428
Malaysia-CA
288
77
0
CY7C64345
4909973
610921199
Malaysia-CA
168
77
0
CY7C64345
4909973
610921199
Malaysia-CA
288
77
0
Malaysia-CA COMP
6
0
STRESS: STATIC LATCH-UP 85C, 5.25V, ±200mA)
CY7C64345
4909973
610916427
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Page 10 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
Reliability Test Data
QTP #: 091801
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY7C64345
4909973
610916428
Malaysia-CA
500
77
0
CY7C64345
4909973
610916428
Malaysia-CA
1000
77
0
CY7C64345
4909973
610921199
Malaysia-CA
500
77
0
Company Confidential
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Page 11 of 12
Document No. 001-81646 Rev. *C
ECN #: 4900058
Document History Page
Document Title:
Document Number:
QTP 090808: ENCORE DEVICE FAMILY, S8DI-5R TECHNOLOGY, FAB 4
001-81646
Rev. ECN
Orig. of
No.
Change
**
3695017 NSR
*A
4105599 JYF
*B
4490321 JYF
*C
4900058 JYF
MEL
Description of Change
Initial Spec Release.
Revision from the original qual report released in memo HGA-959:
- Updated the QTP#090808 Version 2.0 to Version 3.0
- Added devices CY7C64315 and CY7C64316 in the title page.
- Changed the contact Reliability Engineer to Rene Rodgers.
- Changed the product division from CCD to DCD.
- Added the wafer sales and die sales in package availability table.
- Replaced the reference Cypress standards with the industry
standards on the reliability tests performed table.
- Added ball shear and constructional analysis on the reliability tests
performed table.
Sunset Spec Review:
Deleted Version 3.0 in QTP title page;
Updated Reliability Tests Performed Table:
- Deleted “3IR” in reflow step of HAST, TCT, PCT and Acoustic
- Deleted revisions of Jedec/Military standards. Revision changes
from time to time
Sunset Review:
Updated QTP title page for template alignment.
Sunset Review:
Updated reference for Reliability Director;Updated Reliability Tests
Performed table (HTSSL/LTOL/Ball Shear/Dynamic Latch Up) for
template alignment;Deleted obsolete specs 001-11286/001-42703.
Removed Distribution: WEB and Posting: None from the document
history page
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Page 12 of 12
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