2N4261 Compliant available PNP Small Signal Silicon Transistor Qualified per MIL-PRF-19500/511 Qualified Levels: JAN, JANTX, JANTXV and JANS DESCRIPTION This 2N4261 small signal transistor comes in a hermetically sealed metal TO-72 package and is military qualified for high-reliability applications. It is also available in a low-profile UB surface mount package or with a ceramic lid in the UBC package. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Popular JEDEC registered 2N4261 number • JAN, JANTX, JANTXV and JANS qualification is available per MIL-PRF-19500/511. TO-72 Package (See part nomenclature for all available options.) • RoHS compliant version available Also available in: UB package (surface mount) 2N4261UB UBC package APPLICATIONS / BENEFITS • • • (Ceramic Lid surface mount) 2N4261UBC Leaded, hermetically sealed TO-72 package Lightweight Military and other high-reliability applications MAXIMUM RATINGS @ T A = 25 ºC Parameters/Test Conditions Junction and Storage Temperature (1) Thermal Resistance Junction-to-Ambient Collector – Emitter Voltage Collector – Base Voltage Emitter - Base Voltage (1) (1) Total Power Dissipation @ TA = +25 ºC (2) @ TC = +25 ºC Collector Current Symbol TJ & TSTG R ӨJA V CEO V CBO V EBO Value -65 to +200 0.860 -15 -15 -4.5 Unit o C o C/W V V V PT 0.2 W IC -30 mA NOTES: 1. Derate linearly 1.14 mW/°C above T A = +25°C MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0150, Rev 3 (10/9/13) ©2013 Microsemi Corporation Page 1 of 4 2N4261 MECHANICAL and PACKAGING • • • • • • CASE: Ni plated kovar, Ni cap TERMINALS: Gold over nickel plated kovar leads, solder dipped. RoHS compliant are available without solder dip on commercial grade only. MARKING: Manufacturer’s ID, date code, part number POLARITY: PNP, see case outline on last page WEIGHT: Approximately 0.322 grams See Package Dimensions on last page. PART NOMENCLATURE JAN 2N4261 Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level JANS = JANS level Blank = Commercial grade SYMBOLS & DEFINITIONS Definition Symbol IB IC V CB V CBO V CE V CEO V CC V EBO V EB JEDEC type number (see Electrical Characteristics table) Base current: The value of the dc current into the base terminal. Collector current: The value of the dc current into the collector terminal. Collector-base voltage: The dc voltage between the collector and the base. Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is open-circuited. Collector-emitter voltage: The dc voltage between the collector and the emitter. Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base terminal is open-circuited. Collector-supply voltage: The supply voltage applied to a circuit connected to the collector. Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal open-circuited. Emitter-base voltage: The dc voltage between the emitter and the base T4-LDS-0150, Rev 3 (10/9/13) ©2013 Microsemi Corporation Page 2 of 4 2N4261 ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted Parameters / Test Conditions Symbol Min V (BR)CEO -15 Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage I C = -10 mA Collector-Base Cutoff Current V CB = -15 V Emitter-Base Cutoff Current V EB = -4.5 V Collector-Emitter Cutoff Current V CE = -10 V, V BE = -0.4 V V CE = -10 V, V BE = -2.0 V ON CHARACTERISTICS (1) Forward-Current Transfer Ratio I C = -1.0 mA, V CE = -1.0 V I C = -10 mA, V CE = -1.0 V I C = -30 mA, V CE = -1.0 V Collector-Emitter Saturation Voltage I C = -1.0 mA, I B = -0.1 mA I C = -10 mA, I B = -1.0 mA Base-Emitter Saturation Voltage (Non-Saturated) V CE = -1.0 V, I C = -1.0 mA V CE = -1.0 V, I C = -10 mA DYNAMIC CHARACTERISTICS Parameters / Test Conditions Magnitude of Small–Signal Forward Current Transfer Ratio I C = -5.0 mA, V CE = -4.0 V, f = 100 MHz I C = -10 mA, V CE = -10 V, f = 100 MHz Output Capacitance V CB = -4 V, I E = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance V EB = -0.5V, I C = 0, 100 kHz ≤ f ≤ 1.0 MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Turn-On Time V CC = -17 V; I C = -10 mA Turn-Off Time V CC = -17 V; I C = -10 mA V I CBO -10 µA I EBO -10 µA I CEX -50 -5 nA nA h FE 25 30 20 150 V CE(sat) -0.15 -0.35 V V BE -0.8 -1.0 V Max Unit C obo 2.5 pF C ibo 2.5 pF Max Unit t on 2.5 ns t off 3.5 ns Symbol |h fe | Symbol Min 15 20 Min (1) Pulse Test: pulse width = 300 µs, duty cycle ≤ 2.0% T4-LDS-0150, Rev 3 (10/9/13) ©2013 Microsemi Corporation Page 3 of 4 2N4261 PACKAGE DIMENSIONS Ltr TL TH HD CD LD LC CH LL P Q 1 2 3 4 Dimensions Inch Millimeters Min Max Min Max 0.028 0.048 0.071 1.22 0.036 0.046 0.091 1.17 0.209 0.230 5.31 5.84 0.178 0.195 4.52 4.95 0.016 0.021 0.410 0.53 0.100 TP 2.54 TP 0.170 0.210 4.32 5.33 0.500 0.750 12.70 19.05 0.100 2.54 0.040 1.02 Notes 5 5 7, 8 7, 8 7, 8 5 Emitter Base Collector Case NOTES: 1. Dimensions are in inches. 2. Millimeters are given for information only. 3. Beyond r (radius) maximum, TH shall be held for a minimum length of 0.011 (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All four leads. 9. Dimension r (radius) applies to both inside corners of tab. 10. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. 11. Lead 1 = emitter, lead 2 = base, lead 3 = collector, lead 4 = case (electrically connected). T4-LDS-0150, Rev 3 (10/9/13) ©2013 Microsemi Corporation Page 4 of 4