ARF1519 ARF1519 BeO 104T-100 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz. • Specified 250 Volt, 13.56 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C VGS Gate-Source Voltage PD Total Device Dissipation @ TC = 25°C TJ,TSTG TL ARF1519 UNIT 1000 Volts 20 Amps ±30 Volts 1350 Watts -55 to 175 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 300μA) VDS(ON) On State Drain Voltage IDSS IGSS 1 TYP MAX 5 7 1000 (I D(ON) = 10A, VGS = 10V) 300 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 3000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±600 Forward Transconductance (VDS = 15V, ID = 10A) gfs MIN Visolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 6mA) 3 14 UNIT Volts μA nA mhos TBD Volts 2 4 Volts MAX UNIT Characteristic (per package unless otherwise noted) MIN TYP 0.13 RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) 0.09 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com °C/W 050-4935 Rev B Symbol 2-2008 THERMAL CHARACTERISTICS ARF1519 DYNAMIC CHARACTERISTICS Symbol Characteristic MIN Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V VDS = 150V f = 1 MHz TYP MAX 4600 5600 310 350 90 120 MAX UNIT pF FUNCTIONAL CHARACTERISTICS Symbol GPS 1 Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 13.56MHz 17 20 dB 70 75 % VGS = 0V η Drain Efficiency Ψ Electrical Ruggedness VSWR 10:1 VDD = 200V Pout = 750W No Degradation in Output Power Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. CAPACITANCE (pf) Coss Crss ID, DRAIN CURRENT (AMPERES) 60 Ciss 50 VDS> ID (ON) x RDS (ON)MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 40 30 20 10 TJ = +25°C TJ = +125°C 050-4935 Rev B 2-2008 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage UNIT 0 0 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics ARF1519 50 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 3, Typical Threshold Voltage vs Temperature 45 6.5V 6V 40 35 30 5.5V 25 20 5V 15 10 4.5V 5 4V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Output Characteristics 0.2 D=0.5 0.05 0.2 0.1 0.01 0.05 0.005 0.02 0.01 Note: SINGLE PULSE 0.001 PDM t1 t2 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 10 Table 1 - Typical Class AB Large Signal Impedance -- ARF1519 2.0 13.5 Zin (Ω) 10.6 -j 12.2 0.5 -j 2.7 ZOL (Ω) 31 -j 4.7 15.6 -j 16 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 200V 2-2008 F (MHz) 050-4935 Rev B Z JC, THERMAL IMPEDANCE (°C/W) q 0.1 ARF1519 -- 13.56 MHz Test Circuit 200V L3 C7 C9 C10 C8 L1 Output L2 RF Input C4 C5 T1 C6 DUT C1 C2 C3 C1-C3 1nF X7R 100V smt C4 2x 8.2 nF 1kV COG C5 270pF x2 ATC 100C C7-C10 8.2 nF 1kv COG C11 390 + 27 pF ATC 100C L1 2uH - 22t #24 enam. .312" dia. L2 368 nH - 5t #12 .625" dia .5" l L3 500nH 2t on 850u .5" bead R1 2.2k 0.5W T1 10:1t transformer R1 Parts placement - Not to Scale. 13.56 MHz Test Amp ARF1519 BeO 1525-100 ARF1518 J2 T1 J1 RF 12-04 Thermal Considerations and Package Mounting: 050-4935 Rev B 2-2008 .250 The rated 1350W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12°C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. Use 4-40 or M3 screws torqued to T = 4 - 6 in-lb (0.45 - 0.68 N-m). HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and mounting surface is beryllium oxideBeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste. D .466 G .500 .150r S ARF1519 .250 BeO .750 1.000 1 1525-100 .125d .500 2 3 1.250 1.500 4 .300 .200 .005 .040 1 2 3 4 Drain Source Source Gate