APT26F120B2_L_C.pdf

APT26F120B2
APT26F120L
1200V, 27A, 0.58Ω Max, trr ≤335ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
T-Max®
TO-264
APT26F120B2
APT26F120L
D
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
27
Continuous Drain Current @ TC = 100°C
16
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
2165
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
14
A
1
105
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
1135
RθJC
Junction to Case Thermal Resistance
0.11
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
°C/W
Operating and Storage Junction Temperature Range
-55
150
°C
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
0.11
300
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
050-8143 Rev C 5-2009
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
VBR(DSS)
Drain-Source Breakdown Voltage
ΔVBR(DSS)/ΔTJ
Breakdown Voltage Temperature Coefficient
RDS(on)
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
ΔVGS(th)/ΔTJ
Min
1200
VGS = 10V, ID = 14A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1200V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.41
0.48
4
-10
0.58
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
µA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 250µA
APT26F120B2_L
Min
Test Conditions
VDS = 50V, ID = 14A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
31
9670
115
715
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
275
VGS = 0V, VDS = 0V to 800V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Current Rise Time
Turn-Off Delay Time
140
300
50
140
50
31
170
48
VGS = 0 to 10V, ID = 14A,
VDS = 600V
Resistive Switching
VDD = 800V, ID = 14A
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
A
105
S
1.1
335
640
TJ = 25°C
TJ = 125°C
TJ = 25°C
VDD = 100V
TJ = 125°C
diSD/dt = 100A/µs
TJ = 25°C
Unit
27
G
ISD = 14A, TJ = 25°C, VGS = 0V
ISD = 14A 3
Max
TJ = 125°C
ISD ≤ 14A, di/dt ≤1000A/µs, VDD = 800V,
TJ = 125°C
1.72
4.67
11
16
V
ns
µC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 22.09mH, RG = 25Ω, IAS = 14A.
050-8143 Rev C 5-2009
3 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -4.40E-7/VDS^2 + 5.34E-8/VDS + 7.59E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT26F120B2_L
70
25
V
GS
= 10V
T = 125°C
J
V
50
40
30
TJ = 25°C
20
10
0
15
5V
10
5
4.5V
TJ = 125°C
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
Figure 2, Output Characteristics
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 14A
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
2.5
80
2.0
1.5
1.0
0.5
60
TJ = -55°C
TJ = 25°C
40
TJ = 125°C
20
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
40
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
10,000
35
Ciss
TJ = -55°C
30
C, CAPACITANCE (pF)
gfs, TRANSCONDUCTANCE
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
100
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
TJ = 25°C
25
TJ = 125°C
20
15
10
1000
Coss
100
Crss
5
0
= 6, 7, 8 & 9V
GS
20
TJ = -55°C
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
60
10
0
2
4
6
8
10 12
14
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
0
200
400
600
800 1000 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
16
100
12
VDS = 240V
10
VDS = 600V
8
6
VDS = 960V
4
2
0
90
80
70
60
50
TJ = 25°C
40
TJ = 150°C
30
20
10
0
0
50
100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
050-8143 Rev C 5-2009
14
ISD, REVERSE DRAIN CURRENT (A)
VGS, GATE-TO-SOURCE VOLTAGE (V)
ID = 14A
200
200
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
APT26F120B2_L
10
13µs
100µs
1ms
1
Rds(on)
0.1
Rds(on)
10
13µs
100µs
1ms
TJ = 150°C
TC = 25°C
1
DC line
0.1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
10ms
Scaling for Different Case & Junction
Temperatures:
100ms
ID = ID(T = 25°C)*(TJ - TC)/125
C
DC line
100ms
TJ = 125°C
TC = 75°C
1
10ms
IDM
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.10
D = 0.9
0.08
0.7
0.06
0.5
Note:
0.04
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.12
0.3
t1
t2
SINGLE PULSE
0.02
t1 = Pulse Duration
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
T-MAX® (B2) Package Outline
1.0
TO-264 (L) Package Outline
e3 100% Sn Plated
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
050-8143 Rev C 5-2009
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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