APT28F60B
APT28F60S
600V, 30A, 0.22Ω Max, trr ≤230ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
TO
-24
7
D 3 PAK
APT28F60B
APT28F60S
D
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
30
Continuous Drain Current @ TC = 100°C
19
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
780
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
14
A
1
105
Thermal and Mechanical Characteristics
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
520
RθJC
Junction to Case Thermal Resistance
0.24
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
0.11
-55
150
300
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
8-2011
Typ
Rev D
Min
Characteristic
050-8118
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
600
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 14A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 600V
TJ = 25°C
VGS = 0V
TJ = 125°C
Typ
Max
0.57
0.17
4
-10
0.22
5
250
1000
±100
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 1mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT28F60B_S
Min
Test Conditions
VDS = 50V, ID = 14A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
27
5575
55
510
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
270
VGS = 0V, VDS = 0V to 400V
140
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 400V, ID = 14A
tr
td(off)
tf
Turn-Off Delay Time
140
30
60
31
36
95
29
VGS = 0 to 10V, ID = 14A,
VDS = 300V
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
30
A
G
105
S
ISD = 14A, TJ = 25°C, VGS = 0V
1.0
230
430
TJ = 25°C
TJ = 125°C
ISD = 14A 3
TJ = 25°C
diSD/dt = 100A/μs
TJ = 125°C
VDD = 100V
TJ = 25°C
Unit
TJ = 125°C
ISD ≤ 14A, di/dt ≤1000A/μs, VDD = 400V,
TJ = 125°C
0.83
2.07
8.0
11.2
V
ns
μC
A
20
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 7.96mH, RG = 25Ω, IAS = 14A.
050-8118
Rev D
8-2011
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -1.33E-7/VDS^2 + 3.06E-8/VDS + 8.83E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT28F60B_S
120
V
GS
45
= 10V
T = 125°C
J
40
V
TJ = -55°C
80
TJ = 25°C
60
40
TJ = 150°C
20
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
100
30
6.5V
25
20
15
6V
10
5
TJ = 125°C
0
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
5.5V
5V
0
NORMALIZED TO
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
2.0
1.5
1.0
0.5
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
60
TJ = -55°C
TJ = 25°C
40
TJ = 125°C
20
0
50
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
10,000
40
TJ = -55°C
C, CAPACITANCE (pF)
gfs, TRANSCONDUCTANCE
VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 14A
2.5
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
100
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
= 7 &,10V
GS
35
TJ = 25°C
30
TJ = 125°C
20
Ciss
1000
Coss
100
10
Crss
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
100
200
300
400
500
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
VDS = 120V
10
VDS = 300V
8
6
VDS = 480V
4
2
0
20 40 60 80 100 120 140 160 180 200
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
90
80
70
60
50
TJ = 25°C
40
30
TJ = 150°C
20
10
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
8-2011
12
0
100
ID = 14A
14
0
10
35
Rev D
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
5
050-8118
0
ISD, REVERSE DRAIN CURRENT (A)
0
200
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
APT28F60B_S
200
10
13μs
100μs
Rds(on)
1
0.1
1ms
10ms
10
13μs
100μs
1ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
0.1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
10ms
TJ = 150°C
TC = 25°C
1
100ms
TJ = 125°C
TC = 75°C
1
IDM
Rds(on)
C
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.25
0.7
0.15
Note:
0.5
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
D = 0.9
0.20
0.10
t1
t2
0.3
t1 = Pulse Duration
t
0.05
SINGLE PULSE
0.1
0
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
D3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610)
16.26 (.640)
Drai n
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drai n
(Heat Sink)
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
1.0
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
050-8118
Rev D
8-2011
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
1.016(.040)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drai n
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs. }
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Source
Drai n
Gate
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated