APT29F80J 800V, 29A, 0.21Ω Max, trr ≤370ns N-Channel FREDFET S S POWER MOS 8® is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D G SO 2 T- 27 "UL Recognized" file # E145592 IS OTO P ® D APT29F80J G Single die FREDFET S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 31 Continuous Drain Current @ TC = 100°C 19 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1979 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 24 A 1 173 Thermal and Mechanical Characteristics Min Characteristic Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 543 RθJC Junction to Case Thermal Resistance 0.23 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com 0.15 -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m 050-8171 Rev C 8-2011 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 800 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 24A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 800V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 1.41 0.19 4 -10 0.21 5 250 1000 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT29F80J Min Test Conditions VDS = 50V, ID = 24A VGS = 0V, VDS = 25V f = 1MHz Co(cr) 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Typ 43 9326 159 927 Max Unit S pF 438 VGS = 0V, VDS = 0V to 533V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 217 303 51 155 53 76 231 67 VGS = 0 to 10V, ID = 24A, VDS = 400V Resistive Switching VDD = 533V, ID = 24A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max 31 A G 173 S ISD = 24A, TJ = 25°C, VGS = 0V 1.0 370 710 TJ = 25°C TJ = 125°C ISD = 24A 3 TJ = 25°C diSD/dt = 100A/μs TJ = 125°C Unit TJ = 25°C TJ = 125°C 1.91 5.18 12 18 ISD ≤ 24A, di/dt ≤1000A/μs, VDD = 100V, TJ = 125°C V ns μC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A. 050-8171 Rev C 8-2011 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 100 V GE APT29F80J 60 = 10V J 90 TJ= 55°C 50 70 ID, DRAIN CURRENT (A) 80 TJ= 25°C 60 50 TJ= 125°C 40 30 TJ= 150°C 20 10 & 15V 40 5.5V 30 5V 20 10 4.5V 4V 10 3.5 0 0 5 10 15 20 25 30 35 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 2, Output Characteristics 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 1, Output Characteristics 160 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. VGS = 10V @ 24A 3.0 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 140 ID, DRAIN CURRENT (A) 2.5 2.0 1.5 1.0 0.5 120 TJ= 55°C 100 80 TJ= 25°C 60 40 TJ= 125°C 20 0 0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 3, RDS(ON) vs Junction Temperature 60 g fs, TRANSCONDUCTANCE 0 0 2 4 6 8 VGS , GATE-TO-SOURCE VOLTAGE (V) FIGURE 4, Transfer Characteristics Ciss TJ = -55°C 50 TJ = 25°C 40 TJ = 125°C 30 20 1,000 Coss 100 Crss 10 0 10 0 5 10 15 20 25 30 35 ID, DRAIN CURRENT (A) FIGURE 5, Gain vs Drain Current 12 VDS = 120V VDS = 300V 8 6 VDS = 480V 4 2 0 0 200 400 600 80 200 ID = 31A 10 0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 6, CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE 100 200 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) VGS, GATE-TOSOURCE VOLTAGE (V) 10 10,000 C, CAPACITANCE (pF) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 6 & 6.5V 160 120 80 TJ = 25°C TJ = 150°C 40 0 0 0.4 0.8 1.2 1.6 VSD, SOURCE-TO-DRAIN VOLTAGE (V) FIGURE 8, Reverse Drain Current vs Source-to-Drain Voltage 050-8171 Rev C 8-2011 ID, DRAIN CURRENT (A) T = 125°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 IDM 13μs 10 100μs 1ms Rds(on) 1 10ms 100ms 1 100 IDM 13μs 100μs 10 Rds(on) 1ms 10ms TJ = 150°C TC = 25°C 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 1 DC line TJ = 125°C TC = 75°C 0.1 APT29F80J 1000 1000 C 0.1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 1 10 100 1000 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 0.3 t1 t2 0.05 t1 = Pulse Duration 0.1 t 0.05 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 0 -5 10 10 -4 10 -3 10 -2 10 -1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 050-8171 Rev C 8-2011 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drai n * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal . 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) Gate