APT29F80J_C.pdf

APT29F80J
800V, 29A, 0.21Ω Max, trr ≤370ns
N-Channel FREDFET
S
S
POWER MOS 8® is a high speed, high voltage N-channel switch-mode power
MOSFET. This 'FREDFET' version has a drain-source (body) diode that has
been optimized for high reliability in ZVS phase shifted bridge and other circuits
through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate
charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent
niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching,
resulting in low EMI and reliable paralleling, even when switching at very high
frequency.
D
G
SO
2
T-
27
"UL Recognized"
file # E145592
IS OTO P ®
D
APT29F80J
G
Single die FREDFET
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
31
Continuous Drain Current @ TC = 100°C
19
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1979
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
24
A
1
173
Thermal and Mechanical Characteristics
Min
Characteristic
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
543
RθJC
Junction to Case Thermal Resistance
0.23
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
VIsolation
RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
WT
Torque
Package Weight
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
0.15
-55
150
°C/W
°C
V
2500
1.03
oz
29.2
g
10
in·lbf
1.1
N·m
050-8171 Rev C 8-2011
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
800
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 24A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 800V
TJ = 25°C
VGS = 0V
TJ = 125°C
Typ
Max
1.41
0.19
4
-10
0.21
5
250
1000
±100
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT29F80J
Min
Test Conditions
VDS = 50V, ID = 24A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Typ
43
9326
159
927
Max
Unit
S
pF
438
VGS = 0V, VDS = 0V to 533V
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Current Rise Time
Turn-Off Delay Time
217
303
51
155
53
76
231
67
VGS = 0 to 10V, ID = 24A,
VDS = 400V
Resistive Switching
VDD = 533V, ID = 24A
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
31
A
G
173
S
ISD = 24A, TJ = 25°C, VGS = 0V
1.0
370
710
TJ = 25°C
TJ = 125°C
ISD = 24A 3
TJ = 25°C
diSD/dt = 100A/μs
TJ = 125°C
Unit
TJ = 25°C
TJ = 125°C
1.91
5.18
12
18
ISD ≤ 24A, di/dt ≤1000A/μs, VDD = 100V,
TJ = 125°C
V
ns
μC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A.
050-8171 Rev C 8-2011
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any
value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
100
V
GE
APT29F80J
60
= 10V
J
90
TJ= 55°C
50
70
ID, DRAIN CURRENT (A)
80
TJ= 25°C
60
50
TJ= 125°C
40
30
TJ= 150°C
20
10 & 15V
40
5.5V
30
5V
20
10
4.5V
4V
10
3.5
0
0
5
10
15
20
25
30
35
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Output Characteristics
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
160
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 24A
3.0
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
ID, DRAIN CURRENT (A)
2.5
2.0
1.5
1.0
0.5
120
TJ= 55°C
100
80
TJ= 25°C
60
40
TJ= 125°C
20
0
0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 3, RDS(ON) vs Junction Temperature
60
g fs, TRANSCONDUCTANCE
0
0
2
4
6
8
VGS , GATE-TO-SOURCE VOLTAGE (V)
FIGURE 4, Transfer Characteristics
Ciss
TJ = -55°C
50
TJ = 25°C
40
TJ = 125°C
30
20
1,000
Coss
100
Crss
10
0
10
0
5
10
15
20
25
30
35
ID, DRAIN CURRENT (A)
FIGURE 5, Gain vs Drain Current
12
VDS = 120V
VDS = 300V
8
6
VDS = 480V
4
2
0
0
200
400
600
80
200
ID = 31A
10
0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 6, CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE
100
200
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 7, Gate Charge vs Gate-to-Source Voltage
ISD, REVERSE DRAIN CURRENT (A)
VGS, GATE-TOSOURCE VOLTAGE (V)
10
10,000
C, CAPACITANCE (pF)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
6 & 6.5V
160
120
80
TJ = 25°C
TJ = 150°C
40
0
0
0.4
0.8
1.2
1.6
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 8, Reverse Drain Current vs Source-to-Drain Voltage
050-8171 Rev C 8-2011
ID, DRAIN CURRENT (A)
T = 125°C
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
IDM
13μs
10
100μs
1ms
Rds(on)
1
10ms
100ms
1
100
IDM
13μs
100μs
10
Rds(on)
1ms
10ms
TJ = 150°C
TC = 25°C
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
1
DC line
TJ = 125°C
TC = 75°C
0.1
APT29F80J
1000
1000
C
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
D = 0.9
0.20
0.7
0.15
0.5
Note:
0.10
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.25
0.3
t1
t2
0.05
t1 = Pulse Duration
0.1
t
0.05
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
SINGLE PULSE
0
-5
10
10
-4
10 -3
10 -2
10 -1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
050-8171 Rev C 8-2011
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
14.9 (.587)
15.1 (.594)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drai n
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal .
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
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