APT29F100B2
APT29F100L
1000V, 30A, 0.44Ω Max, trr ≤270ns
N-Channel FREDFET
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
T-Ma x TM
TO-264
APT29F100B2
APT29F100L
D
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
30
Continuous Drain Current @ TC = 100°C
19
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1875
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
16
A
1
120
Thermal and Mechanical Characteristics
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
1040
RθJC
Junction to Case Thermal Resistance
0.12
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Microsemi Website - http://www.microsemi.com
0.11
-55
150
300
°C/W
°C
0.22
oz
6.2
g
10
in·lbf
1.1
N·m
8-2011
Typ
Rev D
Min
Characteristic
050-8079
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
1000
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 16A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1000V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.15
0.37
4
-10
0.44
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT29F100B2_L
Min
Test Conditions
VDS = 50V, ID = 16A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
34
8500
115
715
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
290
VGS = 0V, VDS = 0V to 667V
150
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 667V, ID = 16A
tr
td(off)
tf
Turn-Off Delay Time
260
46
125
39
35
130
VGS = 0 to 10V, ID = 16A,
VDS = 500V
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
33
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
30
A
G
120
S
ISD = 16A, TJ = 25°C, VGS = 0V
TJ = 25°C
TJ = 125°C
ISD = 16A 3
TJ = 25°C
diSD/dt = 100A/μs
TJ = 125°C
Unit
TJ = 25°C
TJ = 125°C
ISD ≤ 16A, di/dt ≤1000A/μs, VDD = 667V,
TJ = 125°C
230
500
13
35
11
15
1.1
270
640
V
ns
μC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 14.65mH, RG = 25Ω, IAS = 16A.
050-8079
Rev D
8-2011
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.47E-7/VDS^2 + 4.36E-8/VDS + 8.44E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT29F100B2_L
80
V
GS
30
= 10V
T = 125°C
J
70
25
ID, DRIAN CURRENT (A)
50
40
TJ = 25°C
30
20
TJ = 125°C
10
0
V
15
5V
10
5
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
4.5V
0
NORMALIZED TO
VGS = 10V @ 16A
2.5
1.5
1.0
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
TJ = -55°C
60
TJ = 25°C
40
TJ = 125°C
20
0.5
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
45
Ciss
10,000
40
35
TJ = -55°C
30
C, CAPACITANCE (pF)
TJ = 25°C
25
TJ = 125°C
20
15
10
1000
Coss
100
Crss
5
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
4
8
12
16
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
0
0
120
ID = 16A
14
0
10
20
50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
100
80
60
TJ = 25°C
40
TJ = 150°C
20
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
8-2011
0
ISD, REVERSE DRAIN CURRENT (A)
0
Rev D
gfs, TRANSCONDUCTANCE
VDS> ID(ON) x RDS(ON) MAX.
100
2.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
120
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
3.0
= 6, 7, 8 & 9V
GS
20
050-8079
ID, DRAIN CURRENT (A)
TJ = -55°C
60
APT29F100B2_L
200
200
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
IDM
10
13μs
100μs
1ms
1
Rds(on)
10ms
1
TJ = 150°C
TC = 25°C
1
DC line
0.1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
13μs
100μs
Rds(on)
1ms
10ms
Scaling for Different Case & Junction
Temperatures:
100ms
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
C
100ms
TJ = 125°C
TC = 75°C
0.1
10
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.12
D = 0.9
0.10
0.7
0.08
Note:
0.5
0.06
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.14
0.3
0.04
t2
t1 = Pulse Duration
SINGLE PULSE
0.02
0
t1
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0.1
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
D3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610)
16.26 (.640)
Drai n
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drai n
(Heat Sink)
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
1.0
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
1.016(.040)
050-8079
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Rev D
8-2011
0.46 (.018)
0.56 (.022) {3 Plcs}
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
Gate
Drai n
Source
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs. }
Source
Drai n
Gate
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated