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Anti-Parallel
APT2x60DQ120J
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4
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3
4
SO
Parallel
APT2x61DQ120J
2
T-
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"UL Recognized"
ISOTOP ®
file # E145592
APT2x61DQ120J 1200V 60A
APT2x60DQ120J 1200V 60A
DUAL DIE ISOTOP® PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular SOT-227 Package
• Cooler Operation
• Low Forward Voltage
• Higher Reliability Systems
• Uninterruptible Power Supply (UPS)
• High Blocking Voltage
• Increased System Power
• Induction Heating
• Low Leakage Current
• High Speed Rectifiers
• Avalanche Energy Rated
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
MAXIMUM RATINGS
Symbol
VR
Density
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT2x61_60DQ120J
UNIT
1200
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5)
60
RMS Forward Current (Square wave, 50% duty)
73
IF(RMS)
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
EAVL
Avalanche Energy (1A, 40mH)
TJ,TSTG
Amps
540
Operating and StorageTemperature Range
20
mJ
-55 to 175
°C
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
MIN
TYP
MAX
IF = 60A
2.5
3.1
IF = 120A
3.07
IF = 60A, TJ = 125°C
1.82
Volts
VR = 1200V
100
VR = 1200V, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
70
UNIT
µA
pF
7-2006
VF
Characteristic / Test Conditions
053-4228 Rev D
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT2x61_60DQ120J
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 60A, diF/dt = -200A/µs
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 800V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 60A, diF/dt = -200A/µs
VR = 800V, TC = 125°C
IF = 60A, diF/dt = -1000A/µs
Maximum Reverse Recovery Current
VR = 800V, TC = 125°C
MIN
TYP
MAX
UNIT
-
60
-
265
-
560
-
5
-
350
ns
-
2890
nC
-
13
-
150
ns
-
4720
nC
-
40
Amps
MIN
TYP
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
RθJC
VIsolation
WT
Torque
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
MAX
UNIT
.56
°C/W
Volts
2500
Package Weight
1.03
oz
29.2
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.40
0.7
0.30
0.5
0.20
0.3
Note:
PDM
0.50
0
t
0.1
SINGLE PULSE
0.05
10-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
7-2006
TJ (°C)
053-4228 Rev D
t1
t2
0.10
TC (°C)
0.148
0.238
0.174
Dissipated Power
(Watts)
0.006
0.0910
0.524
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.60
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
200
TJ = 175°C
120
100
TJ = 125°C
80
60
TJ = 25°C
40
TJ = -55°C
20
0
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
7000
T = 125°C
J
V = 800V
R
6000
120A
5000
4000
60A
3000
30A
2000
1000
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
30A
200
150
100
50
T = 125°C
J
V = 800V
45
120A
R
40
35
30
25
60A
20
15
30A
10
5
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
90
Duty cycle = 0.5
T = 175°C
80
J
70
60
IRRM
0.4
50
40
30
Qrr
0.2
0.0
60A
250
0
trr
0.6
300
R
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
trr
0.8
350
0
Qrr
1.0
T = 125°C
J
V = 800V
120A
50
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
1.2
trr, REVERSE RECOVERY TIME
(ns)
160
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
180
140
APT2x61_60DQ120J
400
20
10
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
300
250
200
7-2006
150
100
50
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-4228 Rev D
CJ, JUNCTION CAPACITANCE
(pF)
350
APT2x61_60DQ120J
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
053-4228 Rev D
7-2006
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
1.95 (.077)
2.14 (.084)
Anti-parallel
APT2x60DQ120J
Anode 2
Parallel
APT2x61DQ120J
Cathode 1 Cathode 1
Anode 1
Anode 1
Anode 2
38.0 (1.496)
38.2 (1.504)
Dimensions in Millimeters and (Inches)
Cathode 2
Cathode 2
ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.