MSD200 Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 200 Amp Applications y y y y Circuit + MSD Three phase rectifiers for power supplies Rectifiers for DC motor field supplies Battery charger rectifiers Input rectifiers for variable frequency drives Features ~ ~ ~ y y y - y Three phase bridge rectifier Blocking voltage: 800 to 1800V Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Glass passivated chip Module Type TYPE VRRM VRSM MSD200 – 08 MSD200 – 12 MSD200 – 16 MSD200 – 18 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions ID Tc=100℃ IFSM t=10mS Tvj =45℃ i2 t t=10mS Tvj =45℃ a.c.50Hz;r.m.s.;1min Visol Tvj Tstg Values Units 200 A 2240 A 25000 A2s 3000 V -40 to 150 ℃ -40 to 125 Mt To terminals(M6) 5±15% ℃ Nm Ms To heatsink(M6) 5±15% Nm Weight Module 230 g Values Units 0.45 ℃/W 0.025 ℃/W Values Units 1.55 V ≤0.3 ≤5 mA mA Thermal Characteristics Symbol Conditions Per diode Rth(j-c) Module Rth(c-s) Electrical Characteristics Symbol Conditions VFM T=25℃ IFM =300A IRD MSD200-Rev 1 Dec, 2009 Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM www.microsemi.com 1/4 MSD200 Performance Curves 400 A 480 W 300 Typ. 200 240 25℃ 125℃ 100 Pvtot IF 0 0 0 VF 0.5 1.0 1.5 0 ID 2.0 V 200 A Fig2. Power dissipation Fig1. Forward Characteristics 0.5 ℃/ W 100 3000 A 50Hz Zth(j-C) 2250 0.25 1500 750 0 0 0.001 0.01 0.1 1 10 1 100 S 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Current Fig3. Transient thermal impedance 250 A 200 150 100 50 ID 0 0 Tc 50 100 150 °C Fig5.Forward Current Derating Curve MSD200-Rev 1 Dec, 2009 www.microsemi.com 2/4 MSD200 Package Outline Information CASE-M3 Dimensions in mm MSD200-Rev 1 Dec, 2009 www.microsemi.com 3/4