MSD52 Glass Passivated Three Phase Rectifier Bridge VRRM 800 to 1800V ID 50 Amp Applications y y y Circuit y Three phase rectifiers for power supplies Rectifiers for DC motor field supplies Battery charger rectifiers Input rectifiers for variable frequency drives + MSD Features ~ ~ ~ y y - y y Module Type TYPE MSD52 – 08 MSD52 – 12 MSD52 – 16 MSD52 – 18 Three phase bridge rectifier Blocking voltage: 800 to 1800V Heat transfer through aluminum oxide DCB ceramic isolated metal baseplate Glass passivated chip VRRM VRSM 800V 1200V 1600V 1800V 900V 1300V 1700V 1900V Maximum Ratings Symbol Conditions ID Tc=110℃ IFSM t=10mS Tvj =45℃ i2 t t=10mS Tvj =45℃ a.c.50Hz;r.m.s.;1min Visol Tvj Tstg Values Units 50 A 460 A 1050 A2s 3000 V -40 to 150 -40 to 125 Mt To terminals(M5) 5±15% ℃ ℃ Nm Ms To heatsink(M5) 5±15% Nm Weight Module 135 g Values Units 1.45 ℃/W 0.07 ℃/W Values Units 1.8 V ≤0.3 ≤5 mA mA Thermal Characteristics Symbol Conditions Per diode Rth(j-c) Module Rth(c-s) Electrical Characteristics Symbol Conditions VFM T=25℃ IFM =150A IRD MSD52-Rev 1 Dec, 2009 Tvj =25℃ VRD=VRRM Tvj =150℃ VRD=VRRM www.microsemi.com 1/3 MSD52 Performance Curves 200 A 120 W 150 Typ. 60 100 25℃ 125℃ 50 Pvtot IF 0 0 0 VF 0.5 1.0 1.5 0 2.0 V ID 25 50 A Fig2. Power dissipation Fig1. Forward Characteristics 2.0 ℃/ W 600 A 50Hz Zth(j-C 1.5 400 1.0 200 0.5 0 0.001 0.01 0.1 1 10 0 100 S 1 10 cycles 100 Fig4. Max Non-Repetitive Forward Surge Current Fig3. Transient thermal impedance 100 A 80 60 40 20 ID 0 0 Tc 50 100 150 °C Fig5.Forward Current Derating Curve MSD52-Rev 1 Dec, 2009 www.microsemi.com 2/3 MSD52 Package Outline Information CASE-M2 Dimensions in mm MSD52-Rev 1 Dec, 2009 www.microsemi.com 3/3