GaAs Multiplier Diodes Frequency Multiplier ® TM MV71001 – MV71013 Features ● High Efficiency ● Low Parasitic Packages ● Low Thermal Resistance Applications ● High-Power mmW Transceivers ● mmW Phase Arrays ● Drivers for Power Amplifiers ● Frequency Multipliers to 110 GHz and Beyond Description Specifications @ 25°C Part Number CJ @ 0 V ± 10% (pF)1, 3, 4 Typ.5 CT @ 0 V CT @ VBR Min. VBR @ 10 A (V) Typ. Q @ -4 V2 Microsemi’s GaAs frequency multiplier diodes are fabricated from epitaxial layers grown at using Chemical Vapor Deposition. The layers are processed at using proprietary techniques resulting in high Q factor and repeatable tuning curves. The diodes are available in a variety of microwave ceramic packages or chips for operation from UHF to mmW frequencies. MV71001 0.2 2.1 15 8000 MV71002 0.3 2.4 15 8000 MV71003 0.4 2.6 15 7500 MV71004 0.5 2.8 15 7000 MV71005 0.3 2.8 30 8000 MV71006 0.4 3.1 30 7500 Reverse Voltage Breakdown Voltage MV71007 0.5 3.4 30 7000 Forward Current 50 mA @ 25°C MV71008 0.6 3.6 30 6500 Incident Power +23 dBm @ 25°C MV71009 0.7 3.7 30 6000 Operating Temperature -55°C to +175°C MV71010 0.8 3.8 30 6000 Storage Temperature -55°C to +200°C MV71011 0.9 3.9 30 5700 MV71012 1.0 4.0 30 5700 MV71013 1.2 4.2 30 5000 Maximum Ratings Capacitance is specified at 1 MHz. Measured by DeLoach Technique and referenced to 50 MHz. 3 Tightened tolerances available upon request. 4 Package capacitance are not included in above specifications. 5 Capacitance ratio is calculated using CP = 0.15 pF. Ratios will vary depending upon case style selection. 1 2 IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com Specifications are subject to change. Consult factory for the latest information. 1 The MV71000 Series of products are supplied with a RoHS complaint Gold finish . These devices are ESD sensitive and must be handled using ESD precautions. Copyright 2007 Rev: 2009-01-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1