082007 Rev1.2

Document No. 001-65199 Rev. *A
ECN #: 3083236
Cypress Semiconductor
Product Qualification Report
QTP# 082007 VERSION 1.2
November, 2010
Chip Network Processor (Neuron Product) Family
S4D Technology, Fab4
CY7C53120E2
CY7C53120E4
CY7C53150
Neuron Chip Network
Processor
CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
Mira Ben-Tzur
Reliability Director
(408) 943-2675
Fredrick Whitwer
Principal Reliability Engineer
(408) 432-2722
Company Confidential
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Page 1 of 10
Document No. 001-65199 Rev. *A
ECN #: 3083236
PACKAGE/PRODUCT QUALIFICATION HISTORY
QTP
Number
Description of Qualification Purpose
Date
052004
PsoC 8C21001A Neutron Product Family on SONOS S4AD-5
Technology, Fab4
Aug 05
082007
Neuron (7C53120AT) Device in S4D Transfer Qualification from CTI to
CMI
Nov. 09
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Page 2 of 10
Document No. 001-65199 Rev. *A
ECN #: 3083236
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: Qualify Device Neuron (7C53120AT)Product Family on S4D Technology, Fab4
Marketing Part #:
CY7C53120E2, CY7C53120E4, CY7C53150
Device Description:
Chip Network Processor
Cypress Division:
Cypress Semiconductor Corporation – Consumer’s Communication Division (CCD)
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
2
Metal Composition:
Metal 1: 500A Ti/6,000A Al 0.5% Cu /1,200A TiW
Metal 2: 500A Ti/8,000A Al 0.5% Cu/300A TiW
3,000A TeOs / 6,000A Si3N4
Passivation Type and Thickness:
Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm
Gate Oxide Material/Thickness (MOS):
SiO2 / 110A
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor - Minnesota
Die Fab Line ID/Wafer Process ID:
Fab 4, S4D, CMI SONOS
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
64-Lead TQFP
CML-R
44L-Lead TQFP
CML-R
32-Lead SOIC
CML-R
Note: Package Qualification details upon request.
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Page 3 of 10
Document No. 001-65199 Rev. *A
ECN #: 3083236
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
SZ32
Mold Compound Flammability Rating:
32-Lead Small Outline Integrated Circuit Package (SOIC)
Nitto MP8500C
V-O per UL94
Mold Compound Alpha Emission Rate
N/A
Oxygen Rating Index:
N/A
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
100% Saw
Die Attach Supplier:
Henkel
Die Attach Material:
QMI-509
Die Attach Method:
Dispensing
Bond Diagram Designation:
001-44793
Wire Bond Method:
Thermosonic
Wire Material/Size:
Au, 0.9 mil
Thermal Resistance Theta JA °C/W:
65.9°C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
11-20049
Name/Location of Assembly (prime) facility:
CML-R
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-R
Note: Please contact a Cypress Representative for other package availability.
Company Confidential
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Page 4 of 10
Document No. 001-65199 Rev. *A
ECN #: 3083236
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition
(Temp/Bias)
Dynamic Operating Condition, Vcc Max=5.5V, 125°C
Result
P/F
P
High Temperature Operating Life
Early Failure Rate
Dynamic Operating Condition, Vcc Max=5.75V, 125°C
High Temperature Operating Life
Latent Failure Rate
Dynamic Operating Condition, Vcc Max=5.5V, 125°C
Dynamic Operating Condition, Vcc Max=5.75V, 125°C
P
High Accelerated Saturation Test
(HAST)
130°C, 5.25V, 85%RH
Precondition: JESD22 Moisture Sensitivity Level 1
P
168 Hrs, 85C/85%RH+3IR-Reflow, 260°°C+0, -5°C
Temperature Cycle
MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level 1
P
168 Hrs, 85C/85%RH+3IR-Reflow, 260°°C+0, -5°C
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260°°C+0, -5°C
121°C, 100%RH
Precondition: JESD22 Moisture Sensitivity Level 1
Pressure Cooker
P
168 Hrs, 85C/85%RH+3IR-Reflow, 260°°C+0, -5°C
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs, 30C/60%RH+3IR-Reflow, 260°°C+0, -5°C
Data Retention
150°C ± 5°C No Bias
P
High Temperature Steady State life
125°C, 5.5V, Vcc Max
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
JESD22, Method A114-B
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
MIL-STD-883, Method 3015.7
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V
Cypress Spec. 25-00020
P
Endurance Test
MIL-STD-883, Method 883-1033
P
Age Bond Strength
200C, 4hrs
MIL-STD-883, Method 883-2011
P
Current Density
Cypress Spec 22-00029
P
Low Temperature Operating Life
-30C, 5.5V, 8MHZ
P
SEM Analysis
MIL-STD-883, Method 883-2018-2
P
Acoustic Microscopy
Spec. 25-00104
P
Dynamic Latch up
125C, 8.3V
P
Latch up Sensitivity
125C, 11V, ± 300mA
P
In accordance with JEDEC 17. Cypress Spec. 01-00081
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Page 5 of 10
Document No. 001-65199 Rev. *A
ECN #: 3083236
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life
1
Early Failure Rate
1, 2
High Temperature Operating Life
Long Term Failure Rate
1
2
3
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
3,097 Devices
0
N/A
N/A
0 PPM
758,750 DHRs
0
0.7
55
22 FIT
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann's constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
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Page 6 of 10
Document No. 001-65199 Rev. *A
ECN #: 3083236
Reliability Test Data
QTP #: 052004
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL1
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
15
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
15
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
15
0
STRESS: AGE BOND STRENGTH
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
10
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
COMP
10
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
COMP
10
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
500
256
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
1000
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
500
256
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
254
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
500
252
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
1000
252
0
4516647
610521157
TAIWN-T
COMP
45
0
STRESS: ENDURANCE
CY8C21534 (8C21534A)
STRESS: ESD-CHARGE DEVICE MODEL, (500V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
9
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
3
0
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Page 7 of 10
Document No. 001-65199 Rev. *A
ECN #: 3083236
Reliability Test Data
QTP #: 052004
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
120
1002
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
120
1002
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
120
1002
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
750
235
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
750
235
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
750
235
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
168
76
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
336
76
0
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE CONDITION 168 HR 85C/85%RH (MSL1)
CY8C21234 (8C21234A)
4516647
610527569
PHIL-M
128
49
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
128
44
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
128
44
0
500
45
0
STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
168
45
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
336
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
336
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
168
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
336
45
0
STRESS: STATIC LATCH-UP TESTING (125C, 11V, ±300mA)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4516674
610522255
TAIWN-T
COMP
3
0
CY8C21534 (8C21534A)
4517851
610522404
TAIWN-T
COMP
3
0
STRESS: DYNAMIC LATCH-UP (8.3V)
CY8C21534 (8C21534A)
4516647
TAIWN-T
COMP
3
0
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Page 8 of 10
610521157
Document No. 001-65199 Rev. *A
ECN #: 3083236
Reliability Test Data
QTP #: 052004
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1)
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
300
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
500
50
0
CY8C21534 (8C21534A)
4516647
610521157
TAIWN-T
1000
50
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
300
45
0
CY8C21234 (8C21234A)
4516674
610521849
PHIL-M
1000
45
0
CY8C21234 (8C21234A)
4517851
610522407
PHIL-M
300
45
0
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Page 9 of 10
Document No. 001-65199 Rev. *A
ECN #: 3083236
Reliability Test Data
QTP #: 082007
Device
Fab Lot #
Assy Lot #
Assy Loc Duration Samp
Rej
Failure Mechanism
STRESS: DATA RETENTION, PLASTIC, 150C
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
500
77
0
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
1000
77
0
610923288
CML-R
168
77
0
CML-R
COMP
9
0
8
0
STRESS: ENDURANCE
CY7C53120E4(7C531200D) 4903769
STRESS: ESD-CHARGE DEVICE MODEL, (500V)
CY7C53120E4(7C531200D) 4807912
610829116
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V)
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
COMP
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.75V, Vcc Max)
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
120
2098
0
CY7C53120E4(7C531200D) 4903769
610923288
CML-R
96
999
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.75V, Vcc Max)
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
168
200
0
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
1000
200
0
CY7C53120E4(7C531200D) 4903769
610923288
CML-R
168
30
0
CY7C53120E4(7C531200D) 4903769
610923288
CML-R
1000
30
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 192 HR 30C/60%RH (MSL3)
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
96
77
0
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
168
77
0
COMP
6
0
STRESS: STATIC LATCH-UP TESTING (125C, 8.25V, ±200mA)
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH (MSL3)
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
500
77
0
CY7C53120E4(7C531200D) 4807912
610829116
CML-R
1000
77
0
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Page 10 of 10
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