Document No. 001-65199 Rev. *A ECN #: 3083236 Cypress Semiconductor Product Qualification Report QTP# 082007 VERSION 1.2 November, 2010 Chip Network Processor (Neuron Product) Family S4D Technology, Fab4 CY7C53120E2 CY7C53120E4 CY7C53150 Neuron Chip Network Processor CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Fredrick Whitwer Principal Reliability Engineer (408) 432-2722 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 10 Document No. 001-65199 Rev. *A ECN #: 3083236 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 052004 PsoC 8C21001A Neutron Product Family on SONOS S4AD-5 Technology, Fab4 Aug 05 082007 Neuron (7C53120AT) Device in S4D Transfer Qualification from CTI to CMI Nov. 09 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 10 Document No. 001-65199 Rev. *A ECN #: 3083236 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualify Device Neuron (7C53120AT)Product Family on S4D Technology, Fab4 Marketing Part #: CY7C53120E2, CY7C53120E4, CY7C53150 Device Description: Chip Network Processor Cypress Division: Cypress Semiconductor Corporation – Consumer’s Communication Division (CCD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Metal 1: 500A Ti/6,000A Al 0.5% Cu /1,200A TiW Metal 2: 500A Ti/8,000A Al 0.5% Cu/300A TiW 3,000A TeOs / 6,000A Si3N4 Passivation Type and Thickness: Generic Process Technology/Design Rule (µ-drawn): Single Poly, Double Metal, 0.35 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A Name/Location of Die Fab (prime) Facility: Cypress Semiconductor - Minnesota Die Fab Line ID/Wafer Process ID: Fab 4, S4D, CMI SONOS PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 64-Lead TQFP CML-R 44L-Lead TQFP CML-R 32-Lead SOIC CML-R Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 10 Document No. 001-65199 Rev. *A ECN #: 3083236 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: SZ32 Mold Compound Flammability Rating: 32-Lead Small Outline Integrated Circuit Package (SOIC) Nitto MP8500C V-O per UL94 Mold Compound Alpha Emission Rate N/A Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Henkel Die Attach Material: QMI-509 Die Attach Method: Dispensing Bond Diagram Designation: 001-44793 Wire Bond Method: Thermosonic Wire Material/Size: Au, 0.9 mil Thermal Resistance Theta JA °C/W: 65.9°C/W Package Cross Section Yes/No: No Assembly Process Flow: 11-20049 Name/Location of Assembly (prime) facility: CML-R ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 10 Document No. 001-65199 Rev. *A ECN #: 3083236 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Dynamic Operating Condition, Vcc Max=5.5V, 125°C Result P/F P High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=5.75V, 125°C High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=5.5V, 125°C Dynamic Operating Condition, Vcc Max=5.75V, 125°C P High Accelerated Saturation Test (HAST) 130°C, 5.25V, 85%RH Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°°C+0, -5°C Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 1 P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°°C+0, -5°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°°C+0, -5°C 121°C, 100%RH Precondition: JESD22 Moisture Sensitivity Level 1 Pressure Cooker P 168 Hrs, 85C/85%RH+3IR-Reflow, 260°°C+0, -5°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°°C+0, -5°C Data Retention 150°C ± 5°C No Bias P High Temperature Steady State life 125°C, 5.5V, Vcc Max P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V MIL-STD-883, Method 3015.7 P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V Cypress Spec. 25-00020 P Endurance Test MIL-STD-883, Method 883-1033 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Current Density Cypress Spec 22-00029 P Low Temperature Operating Life -30C, 5.5V, 8MHZ P SEM Analysis MIL-STD-883, Method 883-2018-2 P Acoustic Microscopy Spec. 25-00104 P Dynamic Latch up 125C, 8.3V P Latch up Sensitivity 125C, 11V, ± 300mA P In accordance with JEDEC 17. Cypress Spec. 01-00081 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 10 Document No. 001-65199 Rev. *A ECN #: 3083236 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 3,097 Devices 0 N/A N/A 0 PPM 758,750 DHRs 0 0.7 55 22 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann's constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 10 Document No. 001-65199 Rev. *A ECN #: 3083236 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL1 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 15 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 15 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 10 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M COMP 10 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 256 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 500 256 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 254 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 500 252 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 1000 252 0 4516647 610521157 TAIWN-T COMP 45 0 STRESS: ENDURANCE CY8C21534 (8C21534A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 9 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 10 Document No. 001-65199 Rev. *A ECN #: 3083236 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 120 1002 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 120 1002 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 120 1002 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T 750 235 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T 750 235 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 76 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 76 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY8C21234 (8C21234A) 4516647 610527569 PHIL-M 128 49 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 128 44 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 128 44 0 500 45 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 5.5V) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 168 HR 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 168 45 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 336 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 336 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 168 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 336 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 11V, ±300mA) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4516674 610522255 TAIWN-T COMP 3 0 CY8C21534 (8C21534A) 4517851 610522404 TAIWN-T COMP 3 0 STRESS: DYNAMIC LATCH-UP (8.3V) CY8C21534 (8C21534A) 4516647 TAIWN-T COMP 3 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 10 610521157 Document No. 001-65199 Rev. *A ECN #: 3083236 Reliability Test Data QTP #: 052004 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRECONDITION 168 HRS 85C/85%RH (MSL1) CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 300 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 500 50 0 CY8C21534 (8C21534A) 4516647 610521157 TAIWN-T 1000 50 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 300 45 0 CY8C21234 (8C21234A) 4516674 610521849 PHIL-M 1000 45 0 CY8C21234 (8C21234A) 4517851 610522407 PHIL-M 300 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 10 Document No. 001-65199 Rev. *A ECN #: 3083236 Reliability Test Data QTP #: 082007 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DATA RETENTION, PLASTIC, 150C CY7C53120E4(7C531200D) 4807912 610829116 CML-R 500 77 0 CY7C53120E4(7C531200D) 4807912 610829116 CML-R 1000 77 0 610923288 CML-R 168 77 0 CML-R COMP 9 0 8 0 STRESS: ENDURANCE CY7C53120E4(7C531200D) 4903769 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY7C53120E4(7C531200D) 4807912 610829116 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C53120E4(7C531200D) 4807912 610829116 CML-R COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.75V, Vcc Max) CY7C53120E4(7C531200D) 4807912 610829116 CML-R 120 2098 0 CY7C53120E4(7C531200D) 4903769 610923288 CML-R 96 999 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.75V, Vcc Max) CY7C53120E4(7C531200D) 4807912 610829116 CML-R 168 200 0 CY7C53120E4(7C531200D) 4807912 610829116 CML-R 1000 200 0 CY7C53120E4(7C531200D) 4903769 610923288 CML-R 168 30 0 CY7C53120E4(7C531200D) 4903769 610923288 CML-R 1000 30 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE CONDITION 192 HR 30C/60%RH (MSL3) CY7C53120E4(7C531200D) 4807912 610829116 CML-R 96 77 0 CY7C53120E4(7C531200D) 4807912 610829116 CML-R 168 77 0 COMP 6 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.25V, ±200mA) CY7C53120E4(7C531200D) 4807912 610829116 CML-R STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH (MSL3) CY7C53120E4(7C531200D) 4807912 610829116 CML-R 500 77 0 CY7C53120E4(7C531200D) 4807912 610829116 CML-R 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 10