012906.pdf

Cypress Semiconductor
Product Qualification Report
QTP# 012906 VERSION 1.2
May, 2003
CYS25G0101DX
Sonet C-48 Transceiver
B53D-3 Technology, Fab 4
CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:
Ed Russell
Reliability Director
(408) 432–7069
Shi-jie Wen
Reliability Engineering
(408) 943-4713
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 2 of 12
PRODUCT QALIFICATION HISTORY
Qual
Report
Description of Qualification Purpose
Date
002202
Technology transfer from Fab1 to Fab4 using CY7B993V / CY7B994V
Mar 01
011402
New SONET OC-48 Transceiver CYS25G0101DX
Nov 01
012906
All Layer Change
Jan 02
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 3 of 12
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: To qualify CYS25G0101DX in B53D-3Technology , Fab 4
Marketing Part #:
CYS25G0101DX
Device Description:
3.3V, Commercial and Industrial, available in 120-lead TQFP with heatsink.
Cypress Division:
Cypress Semiconductor Corporation – Data Com Division (DCD)
Overall Die (or Mask) REV:
What ID markings on Die:
Rev. B
7B9532AC
TECHNOLOGY/FAB PROCESS DESCRIPTION – B53D-3
Number of Metal Layers:
2
Metal Composition:
Metal 1: 500A TiW/6,000A Al/0.5%Cu/300A TiW
Metal 2: 300A Ti//8,000A Al/0.5%Cu/300A TiW
Passivation Type and Materials:
1,000A TEOS + 9,000A SiN
Free Phosphorus contents in top glass layer(%):
0%
Die Coating(s), if used:
N/A
Number of Transistors in Device:
70,689
Number of Gates in Device:
70,689
Generic Process Technology/Design Rule ( -drawn):
CMOS, Double Metal/0.25 m
Gate Oxide Material/Thickness (MOS):
SiO2 55Å
Name/Location of Die Fab (prime) Facility:
Cypress Semiconductor – Bloomington Minesota
Die Fab Line ID/Wafer Process ID:
Fab4 / B53D-3
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
120-lead TQFP with heatsink
Anam Seoul Korea (SEOL-L)
Note: Package Qualification details upon request.
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 4 of 12
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
AT120
120-pin Thin Quad Flat Pack (TQFP) with heatsink
Sumitomo EME7351UL
Mold Compound Flammability Rating:
V-O per UL 94
Oxygen Rating Index:
>28%
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
Solder Plated, 85%Sn, 15%Pb
Die Backside Preparation Method/Metallization:
N/A
Die Separation Method:
Wafer Saw
Die Attach Supplier:
Ablestik
Die Attach Material:
8361J
Bond Diagram Designation
10-03783
Wire Bond Method:
Thermosonic
Wire Material/Size:
1.0um
Thermal Resistance Theta JA °C/W:
45°C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
49-10044
Name/Location of Assembly (prime) facility:
Anam Seoul Korea (SEOL-L)
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
Anam Seoul Korea (SEOL-L)
Fault Coverage:
100%
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 5 of 12
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition
(Temp/Bias)
Result
P/F
High Temperature Operating Life
Dynamic Operating Condition, Vcc = 3.8V, 125°
P
Early Failure
Dynamic Operating Condition, Vcc = 4.0V, 125°
High Temperature Operating Life
Dynamic Operating Condition, Vcc = 3.8V, 125°
Latent Failure Rate
Dynamic Operating Condition, Vcc = 4.0V, 125°
High Temp Steady State Life Test
Static Operating Condition, Vcc = 3.63V, 125°C
P
Temperature Cycle
MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity MSL 3
P
P
192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+5, -0°C
Pressure Cooker
121°C, 100%RH
P
MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity MSL 3
192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+5, -0°C
High Accelerated Saturation Test
130°C, 85%RH, 3.63V
(HAST)
MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity MSL 3
P
192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+5, -0°C
Electrostatic Discharge
Human Body Model (ESD-HBM)
2,200V
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V
P
MIL-STD-883, Method 3015
Cypress Spec. 25-00020
P
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 6 of 12
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS (continuation)
Stress/Test
Test Condition
(Temp/Bias)
Result
P/F
Age Bond Strength
MIL-STD-883C, Method 2011
P
X-Ray
MIL-STD-883, Method 3012, Cypress Spec. 12-00292
P
High Temperature Storage
150°C, No Bias
P
External Visual
Cypress Spec. 12-00292
P
Physical Dimensions
Cypress Spec. 25-00031
P
Bond Pull Test
Cypress Spec. 12-00292
P
Low Temperature Operating Life
-30°C, 4.3V
P
Current Density
Cypress Spec. 22-00029
P
Acoustic Microscopy, MSL 3
Cypress Spec. 25-00104
P
Dynamic Latchup Sensitivity
Cypress Spec. 25-00020
P
Static Latchup Sensitivity
125°C, 10V, ± 300mA
P
In accordance with JEDEC 17. Cypress Spec. 01-00081
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 7 of 12
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Device Tested/
Device Hours
#
Fails
Activation
Energy
Acceleration
Factor3
Failure
Rate54
2,026
0
N/A
N/A
0 PPM
1,,189,808 HRs
0
0.7
55
13 FIT
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life1,2
Long Term Failure Rate
.
1
Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C.
Chi-squared 60% estimations used to calculate the failure rate.
3
Thermal Acceleration Factor is calculated from the Arrhenius equation
2
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device
at use conditions.
4
4
EFR and Failure Rate based on QTP #012906, QTP #011402
LFR FIT Rate based on QTP #011402 and QTP #002202.
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 8 of 12
Reliability Test Data
QTP #:
Device
Fab Lot #
002202
Assy Lot #
Assy Loc Duration
Samp
Rej
STRESS: ACOUSTIC, MSL3
CY7B993V-AC
4021265
610036043
TAIWN-G
COMP
15
0
CY7B994V-AC
4030964
610042957
TAIWN-G
COMP
15
0
CY7B994V-AC
4030964
610045835
TAIWN-G
15
0
COMP
STRESS: HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RAT, (125C, 4.0V, >VCC MAX
CY7B994V-AC
4030964
610042957
TAIWN-G
96
679
0
CY7B994V-AC
4030964
610045835
TAIWN-G
96
775
0
STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 4.0, >Vcc Max
CY7B994V-AC
4030964
610042957
TAIWN-G
168
330
0
CY7B994V-AC
4030964
610042957
TAIWN-G
1000
328
0
CY7B994V-AC
4030965
610045835
TAIWN-G
168
330
0
CY7B994V-AC
4030965
610045835
TAIWN-G
1000
239
0
CY7B994V-AC
4030965
610045835
TAIWN-G
2000
239
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST, 125C, 3.63V,>Vcc Max
CY7B993V-AC
4021265
610036043
TAIWN-G
168
78
0
CY7B993V-AC
4021265
610036043
TAIWN-G
336
78
0
STRESS: HIGH TEMP STORGAE, PLASTIC, 150C
CY7B993V-AC
4021265
610036043
TAIWN-G
500
48
0
CY7B993V-AC
4021265
610036043
TAIWN-G
1000
48
0
TAIWN-G
500
47
0
TAIWN-G
COMP
3
0
STRESS: LOW TEMPERATURE OPERATING LIKE, -30C,4.3V
CY7B993V-AC
4021265
610036043
STRESS: DYNAMIC LATCH-UP TESTING 6.79V
CY7B993V-AC
4021265
610036043
Failure Mechanism
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 9 of 12
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
002202
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CY7B993V-AC
4021265
610036043
TAIWN-G
COMP
9
0
CY7B994V-AC
4030964
610042957
TAIWN-G
COMP
9
0
CY7B994V-AC
4030964
610045835
TAIWN-G
COMP
9
0
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V
CY7B993V-AC
4021265
610036043
TAIWN-G
COMP
9
0
CY7B994V-AC
4030964
610042957
TAIWN-G
COMP
9
0
CY7B994V-AC
4030964
610045835
TAIWN-G
COMP
9
0
COMP
3
0
STRESS: STATIC LATCH-UP TESTING 125C, 10V, +/-300mA
CY7B993V-AC
4021265
610036043
TAIWN-G
CY7B994V-AC
4030965
610045835
TAIWN-G
COMP
3
0
CY7B994V-AC
4030964
610052500
TAIWN-G
COMP
3
0
610036043
TAIWN-G
COMP
30
0
STRESS: BOND PULL
CY7B993V-AC
4021265
STRESS: AGE BOND STRENGTH
CY7B994V-AC
4030964
610052500
TAIWN-G
COMP
15
0
CY7B994V-AC
4030965
610052501
TAIWN-G
COMP
15
0
STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3
CY7B993V-AC
4021265
610036043
TAIWN-G
128
46
0
STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3
CY7B993V-AC
4021265
610036043
TAIWN-G
168
48
0
CY7B994V-AC
4030964
610042957
TAIWN-G
168
48
0
CY7B994V-AC
4030964
610045835
TAIWN-G
168
46
0
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 10 of 12
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
002202
Assy Loc Duration Samp
Rej
STRESS: TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3
CY7B993V-AC
4021265
610036043
TAIWN-G
300
48
0
CY7B993V-AC
4021265
610036043
TAIWN-G
500
48
0
CY7B993V-AC
4021265
610036043
TAIWN-G
1000
48
0
CY7B994V-AC
4030964
610042957
TAIWN-G
300
48
0
CY7B994V-AC
4030964
610042957
TAIWN-G
500
48
0
CY7B994V-AC
4030964
610042957
TAIWN-G
1000
48
0
CY7B994V-AC
4030964
610045835
TAIWN-G
300
48
0
4030964
610045835
500
48
0
1000
48
0
CY7B994V-AC
CY7B994V-AC
4030964
610045835
TAIWN-G
TAIWN-G
Failure Mechanism
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 11 of 12
Reliability Test Data
QTP #:
Device
011402
Fab Lot #
Assy Lot #
Ass Loc
Duration
Samp
Rej Failure Mechanism
4048706
610111752
SEOL-L
COMP
15
0
STRESS: ACOUSTIC, MSL3
CYS25G0101DX-ATC (7B9532A)
CYS25G0101DX -ATC (7B9532A) 4048706
610121607
SEOL-L
COMP
15
0
CYS25G0101DX -ATC (7B9532A) 4048679
610123195L1
SEOL-L
COMP
15
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max
CYS25G0101DX -ATC (7B9532A) 4048706
610118512L1
SEOL-L
96
1047
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max)
CYS25G0101DX -ATC (7B9532A) 4048706
610118512L1
SEOL-L
168
379
0
CYS25G0101DX -ATC (7B9532A) 4048706
610118512L1
SEOL-L
1000
366
0
610111752
SEOL-L
COMP
5
0
610111752
SEOL-L
COMP
15
0
610121607
SEOL-L
COMP
15
0
45
0
STRESS: PHYSICAL DIMENSIONS
CYS25G0101DX -ATC (7B9532A) 4048706
STRESS: EXTERNAL VISUAL
CYS25G0101DX -ATC (7B9532A) 4048706
STRESS: X-RAY
CYS25G0101DX -ATC (7B9532A) 4048706
STRESS: PRESSURE COOKER TEST, 121C, 100%RH), PRE COND 192 HR 30C/60%RH
CYS25G0101DX -ATC (7B9532A) 4040862
610102176
SEOL-L
168
STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3
CYS25G0101DX -ATC (7B9532A) 4048706
610111752
SEOL-L
300
51
0
CYS25G0101DX -ATC (7B9532A) 4048706
610111752
SEOL-L
500
48
0
CYS25G0101DX -ATC (7B9532A) 4048706
610111752
SEOL-L
1000
48
0
CYS25G0101DX -ATC (7B9532A) 4048706
610118512L1
SEOL-L
300
59
0
CYS25G0101DX -ATC (7B9532A) 4048706
610118512L1
SEOL-L
500
59
0
CYS25G0101DX -ATC (7B9532A) 4048706
610118512L1
SEOL-L
1000
59
0
CYS25G0101DX -ATC (7B9532A) 4048679
610123195L1
SEOL-L
300
59
0
CYS25G0101DX -ATC (7B9532A) 4048679
610123195L1
SEOL-L
500
57
0
CYS25G0101DX -ATC (7B9532A) 4048679
610123195L1
SEOL-L
1000
55
0
Cypress Semiconductor
SONET OC-48 Transceiver, B53D-3, Fab 4
Device: CYS25G0101DX
QTP# 012906, V. 1.2
May, 2003
Page 12 of 12
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot # Ass Loc
012906
Duration
Samp
Rej Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max
CYS25G0101DX -ATC (7B9532B) 4146731
610200339
SEOL-L
96
979
0
610200339
SEOL-L
COMP
9
0
STRESS: ESD-CHARGE DEVICE MODEL, 500V
CYS25G0101DX -ATC (7B9532B) 4146731
STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 1,100V
CYS25G0101DX -ATC (7B9532B) 4146731
610200339
SEOL-L
COMP
9
0
610200339
SEOL-L
COMP
3
0
STRESS: STATIC LATCHUP, 1215C, 10V
CYS25G0101DX -ATC (7B9532B) 4146731
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