Cypress Semiconductor Product Qualification Report QTP# 012906 VERSION 1.2 May, 2003 CYS25G0101DX Sonet C-48 Transceiver B53D-3 Technology, Fab 4 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432–7069 Shi-jie Wen Reliability Engineering (408) 943-4713 Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 2 of 12 PRODUCT QALIFICATION HISTORY Qual Report Description of Qualification Purpose Date 002202 Technology transfer from Fab1 to Fab4 using CY7B993V / CY7B994V Mar 01 011402 New SONET OC-48 Transceiver CYS25G0101DX Nov 01 012906 All Layer Change Jan 02 Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 3 of 12 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: To qualify CYS25G0101DX in B53D-3Technology , Fab 4 Marketing Part #: CYS25G0101DX Device Description: 3.3V, Commercial and Industrial, available in 120-lead TQFP with heatsink. Cypress Division: Cypress Semiconductor Corporation – Data Com Division (DCD) Overall Die (or Mask) REV: What ID markings on Die: Rev. B 7B9532AC TECHNOLOGY/FAB PROCESS DESCRIPTION – B53D-3 Number of Metal Layers: 2 Metal Composition: Metal 1: 500A TiW/6,000A Al/0.5%Cu/300A TiW Metal 2: 300A Ti//8,000A Al/0.5%Cu/300A TiW Passivation Type and Materials: 1,000A TEOS + 9,000A SiN Free Phosphorus contents in top glass layer(%): 0% Die Coating(s), if used: N/A Number of Transistors in Device: 70,689 Number of Gates in Device: 70,689 Generic Process Technology/Design Rule ( -drawn): CMOS, Double Metal/0.25 m Gate Oxide Material/Thickness (MOS): SiO2 55Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington Minesota Die Fab Line ID/Wafer Process ID: Fab4 / B53D-3 PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 120-lead TQFP with heatsink Anam Seoul Korea (SEOL-L) Note: Package Qualification details upon request. Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 4 of 12 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: AT120 120-pin Thin Quad Flat Pack (TQFP) with heatsink Sumitomo EME7351UL Mold Compound Flammability Rating: V-O per UL 94 Oxygen Rating Index: >28% Lead Frame Material: Copper Lead Finish, Composition / Thickness: Solder Plated, 85%Sn, 15%Pb Die Backside Preparation Method/Metallization: N/A Die Separation Method: Wafer Saw Die Attach Supplier: Ablestik Die Attach Material: 8361J Bond Diagram Designation 10-03783 Wire Bond Method: Thermosonic Wire Material/Size: 1.0um Thermal Resistance Theta JA °C/W: 45°C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 49-10044 Name/Location of Assembly (prime) facility: Anam Seoul Korea (SEOL-L) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: Anam Seoul Korea (SEOL-L) Fault Coverage: 100% Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 5 of 12 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Dynamic Operating Condition, Vcc = 3.8V, 125° P Early Failure Dynamic Operating Condition, Vcc = 4.0V, 125° High Temperature Operating Life Dynamic Operating Condition, Vcc = 3.8V, 125° Latent Failure Rate Dynamic Operating Condition, Vcc = 4.0V, 125° High Temp Steady State Life Test Static Operating Condition, Vcc = 3.63V, 125°C P Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 3 P P 192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+5, -0°C Pressure Cooker 121°C, 100%RH P MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+5, -0°C High Accelerated Saturation Test 130°C, 85%RH, 3.63V (HAST) MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 3 P 192 Hrs., 30°C/60%RH+3IR-Reflow, 235°C+5, -0°C Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V Electrostatic Discharge Charge Device Model (ESD-CDM) 500V P MIL-STD-883, Method 3015 Cypress Spec. 25-00020 P Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 6 of 12 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS (continuation) Stress/Test Test Condition (Temp/Bias) Result P/F Age Bond Strength MIL-STD-883C, Method 2011 P X-Ray MIL-STD-883, Method 3012, Cypress Spec. 12-00292 P High Temperature Storage 150°C, No Bias P External Visual Cypress Spec. 12-00292 P Physical Dimensions Cypress Spec. 25-00031 P Bond Pull Test Cypress Spec. 12-00292 P Low Temperature Operating Life -30°C, 4.3V P Current Density Cypress Spec. 22-00029 P Acoustic Microscopy, MSL 3 Cypress Spec. 25-00104 P Dynamic Latchup Sensitivity Cypress Spec. 25-00020 P Static Latchup Sensitivity 125°C, 10V, ± 300mA P In accordance with JEDEC 17. Cypress Spec. 01-00081 Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 7 of 12 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Acceleration Factor3 Failure Rate54 2,026 0 N/A N/A 0 PPM 1,,189,808 HRs 0 0.7 55 13 FIT High Temperature Operating Life Early Failure Rate High Temperature Operating Life1,2 Long Term Failure Rate . 1 Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. 3 Thermal Acceleration Factor is calculated from the Arrhenius equation 2 E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 4 4 EFR and Failure Rate based on QTP #012906, QTP #011402 LFR FIT Rate based on QTP #011402 and QTP #002202. Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 8 of 12 Reliability Test Data QTP #: Device Fab Lot # 002202 Assy Lot # Assy Loc Duration Samp Rej STRESS: ACOUSTIC, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G COMP 15 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 15 0 CY7B994V-AC 4030964 610045835 TAIWN-G 15 0 COMP STRESS: HIGH TEMP DYNAMIC OPERTING LIFE - EARLY FAILURE RAT, (125C, 4.0V, >VCC MAX CY7B994V-AC 4030964 610042957 TAIWN-G 96 679 0 CY7B994V-AC 4030964 610045835 TAIWN-G 96 775 0 STRESS: HIGH TEMP DYNAMIC OPERTING LIFE-LATENT FAILURE RATE, 125C, 4.0, >Vcc Max CY7B994V-AC 4030964 610042957 TAIWN-G 168 330 0 CY7B994V-AC 4030964 610042957 TAIWN-G 1000 328 0 CY7B994V-AC 4030965 610045835 TAIWN-G 168 330 0 CY7B994V-AC 4030965 610045835 TAIWN-G 1000 239 0 CY7B994V-AC 4030965 610045835 TAIWN-G 2000 239 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST, 125C, 3.63V,>Vcc Max CY7B993V-AC 4021265 610036043 TAIWN-G 168 78 0 CY7B993V-AC 4021265 610036043 TAIWN-G 336 78 0 STRESS: HIGH TEMP STORGAE, PLASTIC, 150C CY7B993V-AC 4021265 610036043 TAIWN-G 500 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 1000 48 0 TAIWN-G 500 47 0 TAIWN-G COMP 3 0 STRESS: LOW TEMPERATURE OPERATING LIKE, -30C,4.3V CY7B993V-AC 4021265 610036043 STRESS: DYNAMIC LATCH-UP TESTING 6.79V CY7B993V-AC 4021265 610036043 Failure Mechanism Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 9 of 12 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 002202 Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL, 500V CY7B993V-AC 4021265 610036043 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610045835 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2,200V CY7B993V-AC 4021265 610036043 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610042957 TAIWN-G COMP 9 0 CY7B994V-AC 4030964 610045835 TAIWN-G COMP 9 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING 125C, 10V, +/-300mA CY7B993V-AC 4021265 610036043 TAIWN-G CY7B994V-AC 4030965 610045835 TAIWN-G COMP 3 0 CY7B994V-AC 4030964 610052500 TAIWN-G COMP 3 0 610036043 TAIWN-G COMP 30 0 STRESS: BOND PULL CY7B993V-AC 4021265 STRESS: AGE BOND STRENGTH CY7B994V-AC 4030964 610052500 TAIWN-G COMP 15 0 CY7B994V-AC 4030965 610052501 TAIWN-G COMP 15 0 STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.63V, PRE COND 192 HR 30C/60%RH, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G 128 46 0 STRESS: PRESSURE COOKER TEST, 121C, 100%RH, PRE COND 192HRS 30C/60%RH, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G 168 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 168 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 168 46 0 Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 10 of 12 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # 002202 Assy Loc Duration Samp Rej STRESS: TC CONDITION C, -65C TO 150C, PRE COND. 192 HRS 30C/60% RH, MSL3 CY7B993V-AC 4021265 610036043 TAIWN-G 300 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 500 48 0 CY7B993V-AC 4021265 610036043 TAIWN-G 1000 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 300 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 500 48 0 CY7B994V-AC 4030964 610042957 TAIWN-G 1000 48 0 CY7B994V-AC 4030964 610045835 TAIWN-G 300 48 0 4030964 610045835 500 48 0 1000 48 0 CY7B994V-AC CY7B994V-AC 4030964 610045835 TAIWN-G TAIWN-G Failure Mechanism Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 11 of 12 Reliability Test Data QTP #: Device 011402 Fab Lot # Assy Lot # Ass Loc Duration Samp Rej Failure Mechanism 4048706 610111752 SEOL-L COMP 15 0 STRESS: ACOUSTIC, MSL3 CYS25G0101DX-ATC (7B9532A) CYS25G0101DX -ATC (7B9532A) 4048706 610121607 SEOL-L COMP 15 0 CYS25G0101DX -ATC (7B9532A) 4048679 610123195L1 SEOL-L COMP 15 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max CYS25G0101DX -ATC (7B9532A) 4048706 610118512L1 SEOL-L 96 1047 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CYS25G0101DX -ATC (7B9532A) 4048706 610118512L1 SEOL-L 168 379 0 CYS25G0101DX -ATC (7B9532A) 4048706 610118512L1 SEOL-L 1000 366 0 610111752 SEOL-L COMP 5 0 610111752 SEOL-L COMP 15 0 610121607 SEOL-L COMP 15 0 45 0 STRESS: PHYSICAL DIMENSIONS CYS25G0101DX -ATC (7B9532A) 4048706 STRESS: EXTERNAL VISUAL CYS25G0101DX -ATC (7B9532A) 4048706 STRESS: X-RAY CYS25G0101DX -ATC (7B9532A) 4048706 STRESS: PRESSURE COOKER TEST, 121C, 100%RH), PRE COND 192 HR 30C/60%RH CYS25G0101DX -ATC (7B9532A) 4040862 610102176 SEOL-L 168 STRESS: TC COND. C -65C TO 150C, PRECONDITION 192 HRS 30C/60%RH, MSL3 CYS25G0101DX -ATC (7B9532A) 4048706 610111752 SEOL-L 300 51 0 CYS25G0101DX -ATC (7B9532A) 4048706 610111752 SEOL-L 500 48 0 CYS25G0101DX -ATC (7B9532A) 4048706 610111752 SEOL-L 1000 48 0 CYS25G0101DX -ATC (7B9532A) 4048706 610118512L1 SEOL-L 300 59 0 CYS25G0101DX -ATC (7B9532A) 4048706 610118512L1 SEOL-L 500 59 0 CYS25G0101DX -ATC (7B9532A) 4048706 610118512L1 SEOL-L 1000 59 0 CYS25G0101DX -ATC (7B9532A) 4048679 610123195L1 SEOL-L 300 59 0 CYS25G0101DX -ATC (7B9532A) 4048679 610123195L1 SEOL-L 500 57 0 CYS25G0101DX -ATC (7B9532A) 4048679 610123195L1 SEOL-L 1000 55 0 Cypress Semiconductor SONET OC-48 Transceiver, B53D-3, Fab 4 Device: CYS25G0101DX QTP# 012906, V. 1.2 May, 2003 Page 12 of 12 Reliability Test Data QTP #: Device Fab Lot # Assy Lot # Ass Loc 012906 Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 3.8V, Vcc Max CYS25G0101DX -ATC (7B9532B) 4146731 610200339 SEOL-L 96 979 0 610200339 SEOL-L COMP 9 0 STRESS: ESD-CHARGE DEVICE MODEL, 500V CYS25G0101DX -ATC (7B9532B) 4146731 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 1,100V CYS25G0101DX -ATC (7B9532B) 4146731 610200339 SEOL-L COMP 9 0 610200339 SEOL-L COMP 3 0 STRESS: STATIC LATCHUP, 1215C, 10V CYS25G0101DX -ATC (7B9532B) 4146731