Document No. 001-83005 Rev. ** ECN #: 3745939 Cypress Semiconductor Product Qualification Report QTP# 044504 October 2012 HX1TT Device Family C8Q-3R Technology, Fab 4 CY7C65620 CY7C65630 USB High-Speed Hub CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Rene Rodgers Reliability Engrg MTS (408) 943-2732 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 033805 FX2LP/FX1/AT2LP New Device family on New C8Q-3R Technology, Fab4 Jan 05 044504 Qualify HX1TT (7C65620/7C65630) Rev. B Feb 06 063307 Qualify HX1TT (7C65620/7C65630) Rev. C Sep 06 063607 Three Layer Mask Change to 7C65630 Rev. C Sep 06 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: HX1TT Device Family in C8Q-3R Technology from Fab4 Marketing Part #: CY7C65620, CY7C65630 Device Description: 3.3V, Commercial and Industrial, available in 56- QFN Cypress Division: Cypress Semiconductor Corporation – Data Communication Division TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Metal Composition: Metal 1: 100A Ti/3,200A Al 0.5% Cu /300A TiW Metal 2: 150A Ti/4,230A Al 0.5% Cu/300A TiW Metal 3: 150A Ti/4,230A Al 0.5% Cu/300A TiW Metal 4: 150A Ti/8,000A Al 0.5% Cu/300A TiW 1,000A TeOs / 9,000A Si3N4 Passivation Type and Materials: Generic Process Technology/Design Rule (µ-drawn): CMOS, 0.13 µm Gate Oxide Material/Thickness (MOS): SiO2 DGOX 32/55A Name/Location of Die Fab (prime) Facility: CMI/Bloomington MN Die Fab Line ID/Wafer Process ID: Fab4, C8Q-3R PACKAGE AVAILABILITY ASSEMBLY FACILITY SITE PACKAGE 56-Pin QFN Seoul-Korea (SEOL-L), Cypress Phil (CML-RA) Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: Oxygen Rating Index: Lead Frame Designation: LY56 Lead Frame Material: 56-Lead QFN Sumitomo EME-G700 V-O per UL94 N/A Full Paddle Copper Base Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: Sawing Die Attach Supplier: Ablestik Die Attach Material: Ablebond 8290 Die Attach Method: Epoxy Bond Diagram Designation: 10-06451 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 21.6 °C/W Package Cross Section Yes/No: No Assembly Process Flow: 49-10994 Name/Location of Assembly (prime) facility: SEOUL-KOREA (L) MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other package availability. 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Page 4 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Dynamic Operating Condition, Vcc Max=2.35V, 125°C Early Failure Rate (EFR) Dynamic Operating Condition, Vcc Max=3.8V, 125°C Result P/F P JESD22-A108 High Temperature Operating Life Dynamic Operating Condition, Vcc Max=3.8V, 125°C Latent Failure Rate (LFR) JESD22-A108 Low Temperature Operating Life -30C, 4.3V High Temperature Steady State life 125°C, 3.63V, Vcc Max High Accelerated Stress Test 130°C, 1.8V/3.63V, 85%RH, JESD22-A110 Precondition: JESD22 Moisture Sensitivity Level 3 (HAST) P P P 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 Temperature Cycle P 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C Pressure Cooker 121°C, 100%RH, 15Psig, JESD22-A102 Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114 Electrostatic Discharge 2,200V Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge 500V, JESD22-C101 P High Temperature Storage 150°C ± 5°C No Bias P Aged Bond Strength 200C, 4hrs MIL-STD-883, Method 2011 P Ball Shear JESD22-B116A P Acoustic Microscopy J-STD-020 P Dynamic Latch-up 125C, 6.9V Static Latch-up 125C, ± 300mA, JESD78 Charge Device Model (ESD-CDM) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 13 P Document No. 001-83005 Rev. ** ECN #: 3745939 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 2,477 Devices 0 N/A N/A 0 ppm 806,008 DHRs 0 0.7 55 21 FIT Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 Reliability Test Data QTP #: 033805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 17 0 CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G COMP 16 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 17 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 16 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 5 0 CY7C68013A (7C682001A) 4416701 610437657 TAIWN-G COMP 5 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 610437657 TAIWN-G COMP 5 0 TAIWN-G COMP 3 0 Failure Mechanism STRESS: ACOUSTIC-MSL3 STRESS: AGE BOND STRENGTH STRESS: BALL SHEAR CY7C68013A (7C682001A) 4416701 STRESS: DYNAMIC LATCH-UP TESTING (6.9V) CY7C68013A (7C682001A) 4416701 610437657 STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY7C68013A (7C682000A) 4416666 610437102 TAIWN-G COMP 9 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 3 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 3 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G 168 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 Reliability Test Data QTP #: 033805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G 80 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 96 499 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 96 514 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 168 200 0 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 1000 194 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 168 208 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 1000 208 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 96 276 0 CY2SSTU877 (7C82877A) 4416701 H20501 TAIWN-G 96 126 0 CY2SSTU877 (7C87741A) 4416701 H20500 TAIWN-G 96 89 0 CY2SSTU877 (7C87740A) 4416791B H20536 TAIWN-G 96 169 0 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 96 304 0 CY2SSTU877 (7C87741A) 4419587 H20650 TAIWN-G 96 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 1000 253 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 150 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 150 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 128 47 0 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 256 47 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G 128 47 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G 256 45 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 128 43 0 500 80 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 Reliability Test Data QTP #: 033805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING (125C, 5.5V, ±300mA) CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 COMP 3 0 TAIWN-G COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G STRESS: STATIC LATCH-UP TESTING (125C, 7.5V, ±300mA) CY7C68013A (7C682001A) 4416701 610437657 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 168 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 288 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY68013A (7C681000A) 610434407/8 TAIWN-G 288 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 168 47 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 288 47 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 288 45 0 4416701 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 Reliability Test Data QTP #: 033805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 300 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 1000 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 300 46 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 500 45 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 1000 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 300 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 Reliability Test Data QTP #: 044504 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C65630 (7C65630B) 4544425 610555576 SEOL-L COMP 9 0 9 0 COMP 3 0 COMP 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY7C65630 (7C65630B) 4544425 610555576 SEOL-L COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY7C65630 (7C65630B) 4544425 610555576 SEOL-L STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA) CY7C65630 (7C65630B) 4544425 610555576 SEOL-L Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 Reliability Test Data QTP #: 063307 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C65630 (7C65630C) 4622296 610639932 SEOL-L COMP 9 0 9 0 COMP 9 0 COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY7C65630 (7C65630C) 4622296 610639932 SEOL-L COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY7C65630 (7C65630C) 4622296 610639932 SEOL-L STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, ±300mA) CY7C65630 (7C65630C) 4622296 610639932 SEOL-L Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 13 Document No. 001-83005 Rev. ** ECN #: 3745939 Document History Page Document Title: Document Number: QTP 044504: HX1TT DEVICE FAMILY, C8Q-3R TECHNOLOGY, FAB 4 001-83005 Rev. ECN Orig. of No. Change ** 3745939 NSR Description of Change Initial Spec Release. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 13