Document No. 001-91524 Rev. *B ECN #: 4802924 Cypress Semiconductor Product Qualification Report QTP# 133203 VERSION*B June, 2015 130nm F-RAM Device Family 130nm Technology, TI Fab FM1608B FM16W08 FM1808B FM18W08 FM24C04B FM24C16B FM24C64B FM24CL04B FM24CL16B FM24CL64B FM24V01 FM24V02 FM24W256 FM25040B FM25640B FM25C160B FM25CL64B FM25L04B FM25L16B FM25V01 FM25V02 FM25W256 64Kb Parallel (8192x8bits) 5V F-RAM Memory 64Kb Parallel (8192x8bits) Wide Voltage F-RAM Memory 256kb Parallel (32,768x8bits) 5V F-RAM Memory 256kb Parallel (32,768x8bits) Wide Voltage F-RAM Memory 4Kb I2C (512Kx8bits) 5V Serial F-RAM Memory 16Kb I2C (2,048Kx8bits) 5V Serial F-RAM Memory 64Kb I2C (8,192Kx8bits) 5V Serial F-RAM Memory 4Kb I2C (512Kx8bits) 3V Serial F-RAM Memory 16Kb I2C (2,048Kx8bits) 3V Serial F-RAM Memory 64Kb I2C (8,192Kx8bits) 3V Serial F-RAM Memory 128Kb (16,384Kx8bits) Serial 3V F-RAM Memory 256Kb (32,768Kx8bits) Serial 3V F-RAM Memory 256Kb I2C (32,768Kx8bits) Serial Wide Voltage F-RAM Memory 4Kb I2C (512Kx8bits) 5V Serial F-RAM Memory 64Kb SPI (8,192Kx8bits) 5V Serial F-RAM Memory 16Kb SPI (2,048Kx8bits) 5V Serial F-RAM Memory 64Kb SPI (8,192Kx8bits) 3V Serial F-RAM Memory 4Kb I2C (512Kx8bits) 3V Serial F-RAM Memory 16Kb SPI (2,048Kx8bits) 3V Serial F-RAM Memory 128Kb (16,384Kx8bits) Serial 3V F-RAM Memory 256Kb (32,768Kx8bits) Serial 3V F-RAM Memory 256Kb SPI (32,768Kx8bits) Serial Wide Voltage F-RAM Memory Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-91524 Rev. *B ECN #: 4802924 130nm F-RAM Device Family 130nm Technology, TI Fab FM28V020 FM31256 FM31276 FM31278 FM3164 FM31L276 FM31L278 FM33256B 256Kb (32Kx8bits) Bytewide F-RAM Memory 256Kb Integrated Processor Companion with F-RAM Memory 64Kb 5V Integrated Processor Companion with F-RAM Memory 256Kb 5V Integrated Processor Companion with F-RAM Memory 64Kb Integrated Processor Companion with F-RAM Memory 64Kb 3V Integrated Processor Companion with F-RAM Memory 256Kb 3V Integrated Processor Companion with F-RAM Memory 256Kb 3V Serial F-RAM Memory FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Rebecca Thomas Reliability Manager Approved By: Don Darling Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-91524 Rev. *B ECN #: 4802924 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number 133203 Description of Qualification Purpose Qualification of Additional Passivation Layers on F-RAM Products Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Date March 2014 Document No. 001-91524 Rev. *B ECN #: 4802924 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualification of Additional Passivation Layers on F-RAM Products FM1608B, FM16W08, FM1808B, FM18W08, FM24C04B, FM24C16B, FM24C64B, FM24CL04B, Marketing Part #: FM24CL16B, FM24CL64B, FM24V01, FM24V02, FM24W256, FM25040B, FM25640B, FM25C160B, FM25CL64B, FM25L04B, FM25L16B, FM25V01, FM25V02, FM25W256, FM28V020 FM31256, FM31276, FM31278, FM3164, FM31L276, FM31L278, FM33256B Device Description: F-RAM Cypress Division: Cypress Semiconductor Corporation – Memory Product Division (MPD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: Proprietary* Metal Composition: Proprietary* Proprietary* Passivation Type and Thickness: Generic Process Technology/Design Rule (-drawn): CMOS / 130nm Gate Oxide Material/Thickness (MOS): Proprietary* Name/Location of Die Fab (prime) Facility: Texas Instruments / Dallas Die Fab Line ID/Wafer Process ID: DMOS 5 / E035.1 *Texas Instruments’ proprietary information is available with signed NDA. ALTERNATIVE PACKAGE AVAILABILITY PACKAGE 8-Lead SOIC WIRE MATERIAL ASSEMBLY FACILITY SITE QTP REFERENCE Au Lingsen, Taiwan QTP#133202 Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No. 001-91524 Rev. *B ECN #: 4802924 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: (SZ815) Mold Compound Flammability Rating: 8-Lead SOIC G600/Sumitomo UL-97 – V0 Oxygen Rating Index: N/A Lead Frame Material: Copper Lead Finish, Composition / Thickness: Pure Sn Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Ablebond Die Attach Material: 8200T Die Attach Method: Epoxy Bond Diagram Designation: 001-86002 Wire Bond Method: Thermosonic Wire Material/Size: Au /0.8 mil Thermal Resistance Theta JA °C/W: 120 C/W Package Cross Section Yes/No: N/A Assembly Process Flow: 001-85970 Name/Location of Assembly (prime) facility: UTAC, Thailand MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: UTAC, Thailand Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No. 001-91524 Rev. *B ECN #: 4802924 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) Result P/F Acoustic Microscopy J-STD-020 Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C P Ball Shear JESD22-B116 P Bond Pull MIL-STD-883 – Method 2011, Cpk : 1.33, Ppk : 1.66 P Criteria: Meet external and internal characteristics of Constructional Analysis Cypress package P 125°C, 1000 Hours Data Retention JESD22-A117 and JESD22-A103 High Accelerated Saturation Test (HAST) JEDEC STD 22-A110: 130°C, 85%RH, 3.6V, Precondition: JESD22 Moisture Sensitivity Level 3 P P 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C High Temperature Operating Life Dynamic Operating Condition, 125°C, 3.6V, 96 Hours Early Failure Rate (EFR) JESD22-A-108 High Temperature Operating Life Dynamic Operating Condition, 125°C, 3.6V, 168,1000 Hours Latent Failure Rate (LFR) JESD22-A-108 Pressure Cooker JESD22-A102:121°C /100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity Level 3 P P P 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C Temperature Cycle MIL-STD-883, Method 1010, Condition C, -65 °C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+ Reflow, 260°C+0, -5°C Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 P Document No. 001-91524 Rev. *B ECN #: 4802924 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate High Temperature Operating Life Early Failure Rate 2,398 Devices 0 N/A N/A 0 PPM High Temperature Operating Life Long Term Failure Rate 1,009,000 DHRs 0 0.7 170 16 FIT * 1 2 3 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T 2 is the junction temperature of the device at use conditions. *LFR data leveraged from QTP# 124901 (TI 130nm F-RAM Process) and QTP# 125003 (128KB/256KB F-RAM AEC-Q100) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No. 001-91524 Rev. *B ECN #: 4802924 Reliability Test Data QTP #: 133203 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej STRESS: ACOUSTIC, MSL3 FM25V02-G (FM25V02A) 2327007 611339585 UTL COMP 15 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL COMP 15 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL COMP 15 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL COMP 5 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL COMP 5 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL COMP 5 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL COMP 5 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL COMP 5 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL COMP 5 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL COMP EQUIVALENT FM25V02-G (FM25V02A) 2329042 611339583 UTL COMP EQUIVALENT FM25V02-G (FM25V02A) 2329041 611339581 UTL COMP EQUIVALENT STRESS: BALL SHEAR STRESS: BOND PULL STRESS: CLASS YIELD STRESS: CONSTRUCTIONAL ANALYSIS FM25V02-G (FM25V02A) 2327007 611339585 UTL COMP 5 0 FM25V02-G (FM25V02A) 2329042 611340083 UTL COMP 5 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL COMP 5 0 STRESS: DATA RETENTION, 125C FM25V02-G (FM25V02A) 2327007 611339585 UTL 500 77 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 500 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 001-91524 Rev. *B ECN #: 4802924 Reliability Test Data QTP #: 133203 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.6V), PRE COND 192 HR 30C/60%RH (MSL3) FM25V02-G (FM25V02A) 2327007 611339585 UTL 128 63 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 128 63 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 128 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 128 71 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 128 66 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 128 66 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.6V, Vcc Max) FM25V02-G (FM25V02A) 2327007 611339585 UTL 96 800 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 96 800 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 96 800 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 96 800 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 96 798 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 96 798 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.6V, Vcc Max) FM25V02-G (FM25V02A) 2327007 611339585 UTL 168 77 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 1000 77 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 1000 77 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 168 57 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 168 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-91524 Rev. *B ECN #: 4802924 Reliability Test Data QTP #: 133203 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej STRESS: PRESSURE COOKER TEST (121C, 100%RH, 15 Psig), PRE COND 192 HR 30C/60%RH (MSL3) FM25V02-G (FM25V02A) 2327007 611339585 UTL 168 77 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 288 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 168 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 288 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 168 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 288 77 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL COMP EQUIVALENT FM25V02-G (FM25V02A) 2329042 611339583 UTL COMP EQUIVALENT FM25V02-G (FM25V02A) 2329041 611339581 UTL COMP EQUIVALENT STRESS: SORT YIELD STRESS: TEMPERATURE CYCLE (COND. C, -65C TO 150C), PRE COND 192 HR 30C/60%RH (MSL3) FM25V02-G (FM25V02A) 2327007 611339585 UTL 500 77 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 1000 77 0 FM25V02-G (FM25V02A) 2327007 611339585 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 500 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329042 611339583 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 500 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 1000 77 0 FM25V02-G (FM25V02A) 2329041 611339581 UTL 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No. 001-91524 Rev. *B ECN #: 4802924 Document History Page Document Title: Document Number: Rev. ECN No. ** *A *B 4308820 4315968 4802924 QTP#133203: 130NM F-RAM DEVICE FAMILY, 130NM TECHNOLOGY, TI FAB 001-91524 Orig. of Change JYF BECK BECK Description of Change Initial release. Standardized format, corrected typos Indicated “Proprietary” Items on the “TECHNOLOGY/FAB PROCESS DESCRIPTION” Table, Page 4, and removed proprietary items from Page 3 (Qualification History) and Page 4 (Product Description). Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11