Document No. 001-81643 Rev. ** ECN #: 3695017 Cypress Semiconductor Product Qualification Report QTP# 044503 VERSION 5.0 July, 2012 FX2LP-100 Device Family C8Q-3R Technology, Fab 4 CY7C64713/14 CY7C68001 CY7C68013A CY7C68014A CY7C68015A CY7C68016A CY7C68023 CY7C68024 CY7C68320C CY7C68321C CY7C68300C CY7C68301C CY7C68034 EZ-USB FX1™ USB Microcontroller Full– Speed USB Peripheral Controller EZ-USB SX2™ High Speed USB Interface Device EZ-USB FX2LP™ USB Microcontroller EZ-USB NX2LP™ USB 2.0 NAND Flash Controller EZ-USB AT2LP™ USB2.0 to ATA/ATAPI Bridge EZ-USB NX2LP-FLEX(TM) Flexible USB NAND Flash Controller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Reliability Director (408) 943-2675 Rene Rodgers Reliability Engrg MTS (408) 943-2732 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 033805 FX2LP/FX1/AT2LP New Device family on New C8Q-3R Technology, Fab4 Jan 05 044503 FX2LP-100 All Mask Tape Out Device Family Qual Mar 05 060604 AT2LP (CY7C68300C) ROM Option Qual Feb 06 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: New Device Family FX2LP-100 in C8Q-3R Technology from Fab4 Marketing Part #: CY68013/4/5/6A, CY7C64713/14, CY7C68300/1C, CY7C68320/1C, CYC768001 Device Description: 3.3V, Commercial and Industrial, available in 100/128-pin TQFP, 56-pin SSOP and QFN Cypress Division: Cypress Semiconductor Corporation – Data Communication Division TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 4 Metal Composition: Metal 1: 100A Ti/3,200A Al 0.5% Cu /300A TiW Metal 2: 150A Ti/4,230A Al 0.5% Cu/300A TiW Metal 3: 150A Ti/4,230A Al 0.5% Cu/300A TiW Metal 4: 150A Ti/8,000A Al 0.5% Cu/300A TiW 1,000A TeOs / 9,000A Si3N4 Passivation Type and Materials: Generic Process Technology/Design Rule (-drawn): CMOS, 0.13 m Gate Oxide Material/Thickness (MOS): SiO2 DGOX 32/55A Name/Location of Die Fab (prime) Facility: CMI/Bloomington MN Die Fab Line ID/Wafer Process ID: Fab4, C8Q-3R PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 100/128-Pin TQFP JT-CHINA, G-TAIWAN 56-Pin SSOP JT-CHINA 56-Pin QFN CML-RA, AE-SHANGHAI Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Package Designation: Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Mold Compound Flammability Rating: Oxygen Rating Index: A100 Lead Frame Material: 100-Pin TQFP Hitachi CEL9200CYR V-O per UL94 N/A Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Grinding Die Separation Method: Sawing Die Attach Supplier: Dexter Die Attach Material: QMI 505 Die Attach Method: Dispensing Bond Diagram Designation: 10-05741 Wire Bond Method: Thermosonic Wire Material/Size: Au, 1.0mil Thermal Resistance Theta JA °C/W: 48.2°C/W Package Cross Section Yes/No: No Name/Location of Assembly (prime) facility: CML-R MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Dynamic Operating Condition, Vcc Max=2.35V, 125C Early Failure Rate (EFR) Dynamic Operating Condition, Vcc Max=3.8V, 125C Result P/F P JESD22-A108 High Temperature Operating Life Dynamic Operating Condition, Vcc Max=3.8V, 125°C Latent Failure Rate (LFR) JESD22-A108 Temperature Cycle MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 P P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C High Accelerated Stress Test (HAST) 130C, 1.8V/3.63V, 85%RH, JESD22-A110 Precondition: JESD22 Moisture Sensitivity Level 3 P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C High Temperature Steady State life 125C, 3.63V, Vcc Max Low Temperature Operating Life -30C, 4.3V Pressure Cooker 121C, 100%RH, 15Psig, JESD22-A102 Precondition: JESD22 Moisture Sensitivity Level 3 P P P 192 Hrs, 30C/60%RH+3IR-Reflow, 260C+0, -5C Aged Bond Strength 200C, 4hrs MIL-STD-883, Method 2011 P High Temperature Storage 150°C ± 5°C No Bias P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V, JESD22-A114 P Electrostatic Discharge 2,200V Human Body Model (ESD-HBM) MIL-STD-883, Method 3015.7 Electrostatic Discharge 500V, JESD22-C101 P Ball Shear JESD22-B116A P Acoustic Microscopy J-STD-020 P Dynamic Latch-up 125C, 6.9V Static Latch-up 125C, 300mA, JESD78 Charge Device Model (ESD-CDM) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 17 P Document No. 001-81643 Rev. ** ECN #: 3695017 RELIABILITY FAILURE RATE SUMMARY Stress/Test High Temperature Operating Life 1 Early Failure Rate 1, 2 High Temperature Operating Life Long Term Failure Rate 1 2 3 Device Tested/ Device Hours # Fails Activation Energy Thermal AF3 Failure Rate 1,290 Devices 0 N/A N/A 0 ppm 806,008 DHRs 0 0.7 55 21 FIT Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ACOUSTIC, MSL1 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 15 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 15 0 STRESS: AGE BOND STRENGTH CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 10 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 10 0 STRESS: DATA RETENTION, PLASTIC, 150C CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1500 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 336 256 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 256 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 336 256 0 9621713 610632687A PHIL-M COMP 47 0 STRESS: ENDURANCE CY8C24494 (8C24494A) STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24795A) 9623716 610639349 SEOL-L COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 9 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 9 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 9 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, (2,200V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M COMP 3 0 CY8C24494 (8C24494A) 9623715 610635880 PHIL-M COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 3 0 C-USA COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY8C24494 (8C24494A) 9623716 610639767 CY8C24494 (8C24994A) 9621713 CY8C24494 (8C24494A) 9623715 610638054 SEOL-L COMP 3 0 CY8C24494 (8C24995A) 9623716 610639350 SEOL-L COMP 3 0 PHIL-M COMP 2 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY8C24494 (8C24494A) 9621713 610632687 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 96 1005 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 96 1144 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 96 908 1 CAPACITOR DEFECT STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 1800 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 180 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 1000 180 0 CY8C24494 (8C24494A) 9623716 610639767A PHIL-M 1000 180 0 STRESS: HIGH TEMP STEADY STATE LIFE TEST (125C, 5.5V) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 80 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 336 80 0 45 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 5.5V CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 060605 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 128 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 128 49 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 168 HR 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 288 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 47 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 168 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 288 50 0 STRESS: TC COND. C -65C TO 150C, PRE COND 168 HRS 85C/85%RH (MSL1) CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 500 50 0 CY8C24494 (8C24494A) 9621713 610632687 PHIL-M 1000 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 500 49 0 CY8C24494 (8C24494A) 9623715 610635580 PHIL-M 1000 49 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 300 50 0 CY8C24494 (8C24494A) 9623716 610639767 PHIL-M 500 49 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 065001 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: DATA RETENTION, PLASTIC, 150C CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 500 77 0 CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 1000 77 0 168 88 0 STRESS: ENDURANCE (25C, 1000 Cycles, Bake 150C, 168hrs) CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 5.5V, Vcc Max) CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 96 789 0 CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 96 403 0 INDNS-O COMP 9 0 8 0 STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY7C63813 (7C63811BK) 9651744 510700277 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O COMP STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 40 Temp Cycles CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 128 46 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O 128 46 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O 128 46 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 5.5V, Vcc Max) CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 168 196 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 40 Temp Cycles CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 168 46 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O 128 46 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O 128 45 0 STRESS: STATIC LATCH-UP TESTING (125C, 8.5V, +/-200mA) CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O COMP 3 0 STRESS: INTERNAL VISUAL CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O COMP 5 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O COMP 5 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O COMP 5 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 065001 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 40 Temp Cycles CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 300 46 0 CY7C63813 (7C63811BK) 9651744 510700277 INDNS-O 500 43 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O 300 46 0 CY7C63813 (7C63811BK) 9651744 510700276 INDNS-O 500 46 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O 300 46 0 CY7C63813 (7C63811BK) 9651744 510700275 INDNS-O 500 46 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 033805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 17 0 CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G COMP 16 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 17 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 16 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G COMP 5 0 CY7C68013A (7C682001A) 4416701 610437657 TAIWN-G COMP 5 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 610437657 TAIWN-G COMP 5 0 TAIWN-G COMP 3 0 Failure Mechanism STRESS: ACOUSTIC-MSL3 STRESS: AGE BOND STRENGTH STRESS: BALL SHEAR CY7C68013A (7C682001A) 4416701 STRESS: DYNAMIC LATCH-UP TESTING (6.9V) CY7C68013A (7C682001A) 4416701 610437657 STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY7C68013A (7C682000A) 4416666 610437102 TAIWN-G COMP 9 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 9 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 9 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 9 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G COMP 3 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G COMP 3 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G 168 80 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 12 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 033805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 3.63V) CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G 80 80 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 96 499 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 96 514 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 168 200 0 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 1000 194 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 168 208 0 CY7C68013A (7C682005A) 4417143 610443845 TAIWN-G 1000 208 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 2.35V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 96 276 0 CY2SSTU877 (7C82877A) 4416701 H20501 TAIWN-G 96 126 0 CY2SSTU877 (7C87741A) 4416701 H20500 TAIWN-G 96 89 0 CY2SSTU877 (7C87740A) 4416791B H20536 TAIWN-G 96 169 0 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 96 304 0 CY2SSTU877 (7C87741A) 4419587 H20650 TAIWN-G 96 500 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (125C, 3.8V, Vcc Max) CY2SSTU877 (7C87741A) 4416666B H20592 TAIWN-G 1000 253 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 150 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 150 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 3.63V), PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 128 47 0 CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G 256 47 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G 128 47 0 CY7C68013A (7C682000A) 4416701 610437702 TAIWN-G 256 45 0 STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 1.8V), PRE COND 192 HR, 30C/60%RH, MSL3 CY2SSTU877 (7C87741A) 4417975 H20583 TAIWN-G 128 43 0 500 80 0 STRESS: LOW TEMPERATURE OPERATING LIFE (-30C, 4.3V) CY7C68013A (7C682005A) 4416701 610438121 TAIWN-G Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 13 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 033805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: STATIC LATCH-UP TESTING (125C, 5.5V, 300mA) CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G COMP 3 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G COMP 3 0 COMP 3 0 TAIWN-G COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, 300mA) CY7C68013A (7C682001A) 4416666 610437607 TAIWN-G STRESS: STATIC LATCH-UP TESTING (125C, 7.5V, 300mA) CY7C68013A (7C682001A) 4416701 610437657 STRESS: HIGH TEMPERATURE STORAGE, 150C, no bias CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR, 30C/60%RH, MSL3 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 168 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 288 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY68013A (7C681000A) 610434407/8 TAIWN-G 288 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 168 47 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 288 47 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 168 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 288 45 0 4416701 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 14 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 033805 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS, 30C/60%RH, MSL3 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 300 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416666 610434406 TAIWN-G 1000 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 168 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 500 50 0 CY7C68013A (7C681000A) 4416701 610434407/8 TAIWN-G 1000 50 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 300 46 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 500 45 0 CY2SSTU877 (7C82877A) 4413035 H19747 TAIWN-G 1000 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 300 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 500 45 0 CY2SSTU877 (7C87740A) 4417143 H20549 TAIWN-G 1000 45 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 15 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Reliability Test Data QTP #: 044503 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C68013A (7C682001B) 4445387 610502976 CML-R COMP 9 0 9 0 3 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, 2200V CY7C68013A (7C682001B) 4445387 610502976 CML-R COMP STRESS: ESD-HUMAN BODY CIRCUIT PER MIL STD 883, METHOD 3015, 2200V CY7C68013A (7C682001B) 4445387 610502976 CML-R COMP STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (125C, 3.8V, Vcc Max) CY7C68013A (7C682005B) 4445387 610502370 CML-R 96 1290 0 COMP 3 0 STRESS: STATIC LATCH-UP TESTING (125C, 6.5V, 300mA) CY7C68013A (7C682001B) 4445387 610502976 CML-R Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 16 of 17 Document No. 001-81643 Rev. ** ECN #: 3695017 Document History Page Document Title: Document Number: QTP# 044503: FX2LP-100 DEVICE FAMILY C8Q-3R TECHNOLOGY, FAB 4 001-81643 Rev. ECN Orig. of No. Change ** 3695017 NSR Description of Change Initial Spec Release. Revision from the original qual report released in memo LGQ-699: - Updated the QTP#044503 Version 4.0 to Version 5.0 - Added device CY7C68034 in the title page. - Changed the contact Reliability Engineer to Rene Rodgers. - Added Industrial in the device description. - Changed the product division from CCD to DCD. - Updated the Assembly Facility site and added 128 TQFP package. - Removed obsolete spec Assembly Process Flow 11-20005. - Replaced the reference Cypress standards with the industry standards on the reliability tests performed table. Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 17 of 17