APTGT100DU170TG-Rev2.pdf

APTGT100DU170TG
Dual common source
Trench + Field Stop IGBT3
Power Module
C1
VCES = 1700V
IC = 100A @ Tc = 80°C
Application
 AC Switches
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
C2
Q1
Q2
G1
G2
E1
E2
Features
 Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
 Kelvin emitter for easy drive
 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
 High level of integration
 Internal thermistor for temperature monitoring
E
NTC1
NTC2
Benefits
 Stable temperature behavior
 Very rugged
 Solderable terminals for easy PCB mounting
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 Low profile
 RoHS Compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1700
150
100
200
±20
560
Tj = 125°C
200A @ 1600V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APTGT100DU170TG – Rev 2 October, 2012
Symbol
VCES
APTGT100DU170TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 100A
Tj = 125°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
5.0
Typ
2.0
2.4
5.8
Max
Unit
250
2.4
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 
VGE = 15V
Tj = 125°C
VBus = 900V
IC = 100A
Tj = 125°C
RG = 4.7 
Typ
9
0.36
0.3
370
40
nF
ns
650
180
400
50
800
ns
300
32
mJ
31
Chopper diode ratings and characteristics
VRRM
IRM
IF
Test Conditions
Min
Diode Forward Voltage
trr
Reverse Recovery Time
VR=1700V
IF = 100A
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
100
1.8
1.9
385
Tj = 125°C
Tj = 25°C
490
25
Qrr
Reverse Recovery Charge
Tj = 125°C
Tj = 25°C
Tj = 125°C
42
11
21
Er
Reverse Recovery Energy
IF = 100A
VR = 900V
di/dt =1000A/µs
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Unit
V
Tj = 25°C
Tj = 125°C
DC Forward Current
VF
Max
1700
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
250
500
µA
A
2.2
V
ns
µC
mJ
2-6
APTGT100DU170TG – Rev 2 October, 2012
Symbol Characteristic
APTGT100DU170TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Resistance @ 25°C
R25
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
Min
Typ
Max
0.22
0.39
Unit
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
 
exp  B25 / 85 
 T25 T 

Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
4000
-40
-40
-40
2.5
°C/W
V
150
125
100
4.7
160
°C
N.m
g
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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3-6
APTGT100DU170TG – Rev 2 October, 2012
SP4 Package outline (dimensions in mm)
APTGT100DU170TG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
200
200
175
TJ = 125°C
TJ=25°C
160
125
IC (A)
IC (A)
150
TJ=125°C
100
120
VGE=13V
VGE=15V
80
75
50
VGE=9V
40
25
0
0
0
0.5
1
1.5
2 2.5
VCE (V)
3
3.5
4
0
1
2
3
VCE (V)
4
5
Energy losses vs Collector Current
Transfert Characteristics
200
100
VCE = 900V
VGE = 15V
RG = 4.7Ω
TJ = 125°C
TJ=25°C
175
80
150
125
TJ=125°C
E (mJ)
IC (A)
VGE=20V
100
75
TJ=125°C
50
60
Eon
Eoff
40
20
Er
25
0
0
6
7
8
9
10
11
12
0
13
25
50
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
100
62.5
Eon
200
IC (A)
75
E (mJ)
250
VCE = 900V
VGE =15V
IC = 100A
TJ = 125°C
87.5
50
Eoff
37.5
25
12.5
Er
100
VGE=15V
TJ=125°C
RG=4.7Ω
0
0
5
10 15 20 25 30 35
Gate Resistance (ohms)
0.2
0.15
0
40
400
800
1200
1600
2000
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
Thermal Impedance (°C/W)
150
50
0
75 100 125 150 175 200
IGBT
0.9
0.7
0.5
0.1
0.05
0
0.00001
0.3
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-6
APTGT100DU170TG – Rev 2 October, 2012
5
APTGT100DU170TG
Forward Characteristic of diode
200
VCE=900V
D=50%
RG=4.7 Ω
TJ=125°C
TC=75°C
20
ZVS
15
ZCS
175
TJ=25°C
150
125
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
25
10
100
TJ=125°C
75
TJ=125°C
50
5
hard
switching
25
0
0
0
20
40
60
80
IC (A)
100
120
0
140
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
Diode
0.7
0.25
0.2
0.15
0.5
0.3
0.1
0.05
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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APTGT100DU170TG – Rev 2 October, 2012
Thermal Impedance (°C/W)
0.4
APTGT100DU170TG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
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warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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APTGT100DU170TG – Rev 2 October, 2012
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Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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