APTGT100DU170TG Dual common source Trench + Field Stop IGBT3 Power Module C1 VCES = 1700V IC = 100A @ Tc = 80°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies C2 Q1 Q2 G1 G2 E1 E2 Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring E NTC1 NTC2 Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 150 100 200 ±20 560 Tj = 125°C 200A @ 1600V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT100DU170TG – Rev 2 October, 2012 Symbol VCES APTGT100DU170TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 100A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V 5.0 Typ 2.0 2.4 5.8 Max Unit 250 2.4 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 100A RG = 4.7 Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 100A RG = 4.7 VGE = 15V Tj = 125°C VBus = 900V IC = 100A Tj = 125°C RG = 4.7 Typ 9 0.36 0.3 370 40 nF ns 650 180 400 50 800 ns 300 32 mJ 31 Chopper diode ratings and characteristics VRRM IRM IF Test Conditions Min Diode Forward Voltage trr Reverse Recovery Time VR=1700V IF = 100A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 100 1.8 1.9 385 Tj = 125°C Tj = 25°C 490 25 Qrr Reverse Recovery Charge Tj = 125°C Tj = 25°C Tj = 125°C 42 11 21 Er Reverse Recovery Energy IF = 100A VR = 900V di/dt =1000A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C DC Forward Current VF Max 1700 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 250 500 µA A 2.2 V ns µC mJ 2-6 APTGT100DU170TG – Rev 2 October, 2012 Symbol Characteristic APTGT100DU170TG Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K Min Typ Max 0.22 0.39 Unit R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 4000 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 160 °C N.m g See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT100DU170TG – Rev 2 October, 2012 SP4 Package outline (dimensions in mm) APTGT100DU170TG Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 200 200 175 TJ = 125°C TJ=25°C 160 125 IC (A) IC (A) 150 TJ=125°C 100 120 VGE=13V VGE=15V 80 75 50 VGE=9V 40 25 0 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current Transfert Characteristics 200 100 VCE = 900V VGE = 15V RG = 4.7Ω TJ = 125°C TJ=25°C 175 80 150 125 TJ=125°C E (mJ) IC (A) VGE=20V 100 75 TJ=125°C 50 60 Eon Eoff 40 20 Er 25 0 0 6 7 8 9 10 11 12 0 13 25 50 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 62.5 Eon 200 IC (A) 75 E (mJ) 250 VCE = 900V VGE =15V IC = 100A TJ = 125°C 87.5 50 Eoff 37.5 25 12.5 Er 100 VGE=15V TJ=125°C RG=4.7Ω 0 0 5 10 15 20 25 30 35 Gate Resistance (ohms) 0.2 0.15 0 40 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (°C/W) 150 50 0 75 100 125 150 175 200 IGBT 0.9 0.7 0.5 0.1 0.05 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGT100DU170TG – Rev 2 October, 2012 5 APTGT100DU170TG Forward Characteristic of diode 200 VCE=900V D=50% RG=4.7 Ω TJ=125°C TC=75°C 20 ZVS 15 ZCS 175 TJ=25°C 150 125 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 25 10 100 TJ=125°C 75 TJ=125°C 50 5 hard switching 25 0 0 0 20 40 60 80 IC (A) 100 120 0 140 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.3 0.9 Diode 0.7 0.25 0.2 0.15 0.5 0.3 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGT100DU170TG – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.4 APTGT100DU170TG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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