APTGT100H170G-Rev2.pdf

APTGT100H170G
Full - Bridge
Trench + Field Stop IGBT3
Power Module
VCES = 1700V
IC = 100A @ Tc = 80°C
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
 Motor control
VBUS
Q1
Q3
G1
G3
E1
E3
OUT1 OUT2
Q2
Features
 Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
 Kelvin emitter for easy drive
 Very low stray inductance
- Symmetrical design
- M5 power connectors
 High level of integration
Q4
G2
G4
E2
E4
0/VBUS
Benefits
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 Low profile
 RoHS Compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1700
150
100
200
±20
560
Tj = 125°C
200A @ 1600V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APTGT100H170G – Rev 2 October, 2012
Symbol
VCES
APTGT100H170G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE = 15V
IC = 100A
Tj = 125°C
VGE = VCE , IC = 2mA
VGE = 20V, VCE = 0V
Min
Typ
5.0
2.0
2.4
5.8
Max
Unit
350
2.4
µA
6.5
500
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Td(on)
Tr
Td(off)
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 100A
RG = 4.7 
VGE = 15V
Tj = 125°C
VBus = 900V
IC = 100A
Tj = 125°C
RG = 4.7 
Typ
9
0.36
0.3
370
40
nF
ns
650
180
400
50
800
ns
300
32
mJ
31
Diode ratings and characteristics
VRRM
IRM
Test Conditions
Min
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
Max
1700
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Typ
V
VR=1700V
Tj = 25°C
Tj = 125°C
IF = 100A
Tc = 80°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
100
1.8
1.9
385
Tj = 125°C
Tj = 25°C
490
28
Tj = 125°C
Tj = 25°C
46
12
Tj = 125°C
24
IF = 100A
VR = 900V
di/dt =1600A/µs
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Unit
350
600
µA
A
2.2
V
ns
µC
mJ
2-6
APTGT100H170G – Rev 2 October, 2012
Symbol Characteristic
APTGT100H170G
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
Typ
IGBT
Diode
To heatsink
For terminals
M6
M5
4000
-40
-40
-40
3
2
Max
0.22
0.39
Unit
°C/W
V
150
125
100
5
3.5
300
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on
www.microsemi.com
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3-6
APTGT100H170G – Rev 2 October, 2012
SP6 Package outline (dimensions in mm)
APTGT100H170G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
200
200
175
TJ = 125°C
TJ=25°C
160
125
IC (A)
IC (A)
150
TJ=125°C
100
120
VGE=13V
VGE=15V
80
75
50
VGE=9V
40
25
0
0
0
0.5
1
1.5
2 2.5
VCE (V)
3
3.5
4
0
1
2
3
VCE (V)
4
5
Energy losses vs Collector Current
Transfert Characteristics
200
100
175
VCE = 900V
VGE = 15V
RG = 4.7Ω
TJ = 125°C
TJ=25°C
80
150
125
TJ=125°C
60
E (mJ)
IC (A)
VGE=20V
100
75
Eoff
40
TJ=125°C
50
Eon
Er
20
25
0
0
5
6
7
8
9
10
11
12
0
13
25
50
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
100
62.5
Eon
200
IC (A)
75
50
Eoff
37.5
150
100
25
12.5
Er
0
0
0
5
10 15 20 25 30 35
Gate Resistance (ohms)
0.2
0.15
0
40
400
800
1200
1600
2000
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.25
Thermal Impedance (°C/W)
VGE=15V
TJ=125°C
RG=4.7Ω
50
IGBT
0.9
0.7
0.5
0.1
0.05
0
0.00001
0.3
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-6
APTGT100H170G – Rev 2 October, 2012
E (mJ)
250
VCE = 900V
VGE =15V
IC = 100A
TJ = 125°C
87.5
75 100 125 150 175 200
IC (A)
VGE (V)
APTGT100H170G
Forward Characteristic of diode
200
20
ZVS
15
VCE=900V
D=50%
RG=4.7 Ω
TJ=125°C
TC=75°C
175
125
ZCS
10
TJ=25°C
150
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
25
100
TJ=125°C
75
TJ=125°C
50
5
hard
switching
25
0
0
0
20
40
60
80
IC (A)
100
120
0
140
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
Diode
0.7
0.25
0.2
0.15
0.5
0.3
0.1
0.05
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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5-6
APTGT100H170G – Rev 2 October, 2012
Thermal Impedance (°C/W)
0.4
APTGT100H170G
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
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warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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APTGT100H170G – Rev 2 October, 2012
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Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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