APTGT100H170G Full - Bridge Trench + Field Stop IGBT3 Power Module VCES = 1700V IC = 100A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control VBUS Q1 Q3 G1 G3 E1 E3 OUT1 OUT2 Q2 Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Q4 G2 G4 E2 E4 0/VBUS Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1700 150 100 200 ±20 560 Tj = 125°C 200A @ 1600V TC = 25°C TC = 80°C TC = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT100H170G – Rev 2 October, 2012 Symbol VCES APTGT100H170G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 100A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V Min Typ 5.0 2.0 2.4 5.8 Max Unit 350 2.4 µA 6.5 500 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 100A RG = 4.7 Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 100A RG = 4.7 VGE = 15V Tj = 125°C VBus = 900V IC = 100A Tj = 125°C RG = 4.7 Typ 9 0.36 0.3 370 40 nF ns 650 180 400 50 800 ns 300 32 mJ 31 Diode ratings and characteristics VRRM IRM Test Conditions Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Max 1700 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ V VR=1700V Tj = 25°C Tj = 125°C IF = 100A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 100 1.8 1.9 385 Tj = 125°C Tj = 25°C 490 28 Tj = 125°C Tj = 25°C 46 12 Tj = 125°C 24 IF = 100A VR = 900V di/dt =1600A/µs www.microsemi.com Unit 350 600 µA A 2.2 V ns µC mJ 2-6 APTGT100H170G – Rev 2 October, 2012 Symbol Characteristic APTGT100H170G Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight Typ IGBT Diode To heatsink For terminals M6 M5 4000 -40 -40 -40 3 2 Max 0.22 0.39 Unit °C/W V 150 125 100 5 3.5 300 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT100H170G – Rev 2 October, 2012 SP6 Package outline (dimensions in mm) APTGT100H170G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 200 200 175 TJ = 125°C TJ=25°C 160 125 IC (A) IC (A) 150 TJ=125°C 100 120 VGE=13V VGE=15V 80 75 50 VGE=9V 40 25 0 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current Transfert Characteristics 200 100 175 VCE = 900V VGE = 15V RG = 4.7Ω TJ = 125°C TJ=25°C 80 150 125 TJ=125°C 60 E (mJ) IC (A) VGE=20V 100 75 Eoff 40 TJ=125°C 50 Eon Er 20 25 0 0 5 6 7 8 9 10 11 12 0 13 25 50 Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 62.5 Eon 200 IC (A) 75 50 Eoff 37.5 150 100 25 12.5 Er 0 0 0 5 10 15 20 25 30 35 Gate Resistance (ohms) 0.2 0.15 0 40 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (°C/W) VGE=15V TJ=125°C RG=4.7Ω 50 IGBT 0.9 0.7 0.5 0.1 0.05 0 0.00001 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGT100H170G – Rev 2 October, 2012 E (mJ) 250 VCE = 900V VGE =15V IC = 100A TJ = 125°C 87.5 75 100 125 150 175 200 IC (A) VGE (V) APTGT100H170G Forward Characteristic of diode 200 20 ZVS 15 VCE=900V D=50% RG=4.7 Ω TJ=125°C TC=75°C 175 125 ZCS 10 TJ=25°C 150 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 25 100 TJ=125°C 75 TJ=125°C 50 5 hard switching 25 0 0 0 20 40 60 80 IC (A) 100 120 0 140 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.3 0.9 Diode 0.7 0.25 0.2 0.15 0.5 0.3 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5-6 APTGT100H170G – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.4 APTGT100H170G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 6-6 APTGT100H170G – Rev 2 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.