APTGT100TDU60PG-Rev2.pdf

APTGT100TDU60PG
Triple Dual Common Source
Trench + Field Stop IGBT3
Power Module
C3
C1
G1
G5
E3
E5
E1/E2
E5/E6
E3/E4
E2
E4
E6
G2
G4
G6
C2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
C5
G3
E1
VCES = 600V
IC = 100A @ Tc = 80°C
C4
C6
Features
• Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant
Absolute maximum ratings
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
600
150
100
200
±20
340
Tj = 150°C
200A @ 550V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-6
APTGT100TDU60PG – Rev 2 October 2012
Symbol
VCES
APTGT100TDU60PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
Min
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 100A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
5.0
Typ
1.5
1.7
5.8
Max
Unit
250
1.9
µA
6.5
400
V
nA
Max
Unit
V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Turn-on Delay Time
Rise Time
Td(off)
Turn-off Delay Time
Tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 100A
RG = 3.3Ω
VGE = ±15V Tj = 25°C
VBus = 300V Tj = 150°C
IC = 100A
Tj = 25°C
RG = 3.3Ω
Tj = 150°C
Typ
6100
390
190
115
45
225
pF
ns
55
130
50
ns
300
70
0.4
0.875
2.5
3.5
mJ
mJ
Reverse diode ratings and characteristics
IRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 100A
VGE = 0V
IF = 100A
VR = 300V
di/dt =2000A/µs
Er
Reverse Recovery Energy
Min
600
Typ
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
100
1.6
1.5
125
220
4.7
Tj = 150°C
Tj = 25°C
9.9
1.1
Tj = 150°C
2.4
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Max
250
500
Unit
V
µA
A
2
V
ns
µC
mJ
2-6
APTGT100TDU60PG – Rev 2 October 2012
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTGT100TDU60PG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
4000
-40
-40
-40
3
Typ
Max
0.44
0.77
Unit
°C/W
V
175
125
100
5
250
°C
N.m
g
SP6-P Package outline (dimensions in mm)
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3-6
APTGT100TDU60PG – Rev 2 October 2012
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
APTGT100TDU60PG
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
200
200
TJ=25°C
175
TJ=150°C
125
IC (A)
IC (A)
150
TJ=125°C
150
100
50
50
0.5
1
1.5
VCE (V)
0
2
2.5
0
3
7
175
1
1.5
2
VCE (V)
VCE = 300V
VGE = 15V
RG = 3.3Ω
TJ = 150°C
6
TJ=25°C
150
5
E (mJ)
125
100
TJ=125°C
75
0.5
TJ=150°C
TJ=25°C
4
Er
3
5
6
7
Eon
0
0
8
9
10
11
0
12
25
50
75
100 125 150 175 200
IC (A)
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
250
VCE = 300V
VGE =15V
IC = 100A
TJ = 150°C
200
Eoff
Eon
IF (A)
E (mJ)
3.5
Eoff
1
25
6
3
2
50
8
2.5
Energy losses vs Collector Current
Transfert Characteristics
200
IC (A)
VGE=9V
25
TJ=25°C
0
VGE=15V
100
75
0
VGE=13V
125
75
25
VGE=19V
TJ = 150°C
175
4
150
100
2
Er
VGE=15V
TJ=150°C
RG=3.3Ω
50
Eon
0
0
0
5
10
15
20
25
Gate Resistance (ohms)
30
0
100
200
300 400
VCE (V)
500
600
700
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
IGBT
0.9
0.7
0.3
0.5
0.2
0.1
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-6
APTGT100TDU60PG – Rev 2 October 2012
Thermal Impedance (°C/W)
0.5
APTGT100TDU60PG
Forward Characteristic of diode
200
VCE=300V
D=50%
RG=3.3Ω
TJ=150°C
100
ZCS
80
150
125
Tc=85°C
ZVS
60
175
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
120
100
TJ=125°C
75
40
TJ=150°C
50
Hard
switching
20
25
TJ=25°C
0
0
0
25
50
75
100
125
0
150
0.4
IC (A)
0.8
1.2
1.6
VF (V)
2
2.4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.9
Diode
0.7
0.5
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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APTGT100TDU60PG – Rev 2 October 2012
Thermal Impedance (°C/W)
0.8
APTGT100TDU60PG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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that Seller was negligent regarding the design or manufacture of the goods.
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APTGT100TDU60PG – Rev 2 October 2012
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Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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