APT30M17JLL_A.pdf

APT30M17JLL
300V 135A 0.017Ω
POWER MOS 7
R
MOSFET
Symbol
VDSS
ID
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
27
2
T-
D
G
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M17JLL
UNIT
300
Volts
Drain-Source Voltage
135
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
540
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
135
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 67.5A)
TYP
MAX
Volts
0.017
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
4-2004
Characteristic / Test Conditions
050-7157 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30M17JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
3285
Reverse Transfer Capacitance
f = 1 MHz
185
VGS = 10V
230
VDD = 150V
85
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 135A @ 25°C
tf
31
VDD = 150V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
13
INDUCTIVE SWITCHING @ 25°C
6
1120
VDD = 200V, VGS = 15V
6
ns
44
ID = 135A @ 25°C
Fall Time
nC
19
VGS = 15V
Turn-off Delay Time
pF
105
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
14100
VGS = 0V
3
MAX
ID = 135A, RG = 5Ω
1250
INDUCTIVE SWITCHING @ 125°C
1325
VDD = 200V, VGS = 15V
ID = 135A, RG = 5Ω
µJ
1460
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
135
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID135A, dl S/dt = 100A/µs)
620
ns
Q
Reverse Recovery Charge (IS = -ID135A, dl S/dt = 100A/µs)
14
µC
rr
dv/
dt
Peak Diode Recovery
dv/
540
(Body Diode)
1.3
(VGS = 0V, IS = -ID135A)
dt
Amps
Volts
5
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.40mH, RG = 25Ω, Peak IL = 135A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID135A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7157 Rev A
4-2004
0.20
0.16
0.3
0.1
0
t1
t2
0.04
SINGLE PULSE
0.05
10-5
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
VGS =15 & 10V
RC MODEL
0.0268
Power
(watts)
0.109
0.0426
0.0456F
0.765F
23.5F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
Case temperature. (°C)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
300
250
200
TJ = -55°C
150
TJ = +25°C
100
TJ = +125°C
50
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
150
7V
100
6.5V
50
6V
5.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
120
100
80
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
1.30
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
D
1.10
1.05
1.00
0.95
0.90
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.15
1.2
= 67.5A
GS
50
100
150
200
250
300
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ 67.5A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
ID, DRAIN CURRENT (AMPERES)
7.5V
200
1.20
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
8V
250
050-7157 Rev A
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
350
300
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
400
APT30M17JLL
350
Ciss
10,000
100µS
100
50
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
10
I
Crss
= 100A
D
VDS= 60V
12
1,000
100
VDS= 150V
VDS= 240V
8
4
0
0
50
100
150
200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
400
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
Coss
10mS
1
10
100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT30M17JLL
30,000
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
540
TJ =+150°C
100
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
250
V
DD
R
G
td(off)
V
150
DD
R
G
tf
T = 125°C
J
80
L = 100µH
= 200V
tr and tf (ns)
td(on) and td(off) (ns)
200
= 200V
= 5Ω
= 5Ω
T = 125°C
J
L = 100µH
100
60
40
tr
20
50
td(on)
0
40
0
40
60
80
100
120
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
80
100
120
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1500
6,000
60
V
DD
I
SWITCHING ENERGY (µJ)
4-2004
050-7157 Rev A
Eon
Eoff
600
V
DD
R
G
= 200V
= 5Ω
T = 125°C
300
J
L = 100µH
SWITCHING ENERGY (µJ)
5,000
1200
900
D
= 200V
= 50A
T = 125°C
J
L = 100µH
EON includes
4,000
Eoff
diode reverse recovery.
3,000
2,000
Eon
1,000
EON includes
0
40
diode reverse recovery.
50
60
70
80
90 100 110 120
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M17JLL
90%
10%
Gate Voltage
Gate Voltage
T 125°C
J
td(off)
td(on)
tr
5%
tf
Drain Current
90%
Drain Voltage
90%
10%
0
5%
10%
T 125°C
J
Drain Voltage
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7157 Rev A
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
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