APT30M30B2FLL APT30M30LFLL 300V 100A 0.030Ω POWER MOS 7 R FREDFET B2FLL ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-264 LFLL • Increased Power Dissipation • Easier To Drive • Popular T-MAX™ or TO-264 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol T-MAX™ D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT30M30B2FLL_LFLL UNIT 300 Volts Drain-Source Voltage Continuous Drain Current 5 100 @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 694 Watts Linear Derating Factor 5.56 W/°C PD TJ,TSTG 400 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 100 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 50A) TYP MAX UNIT Volts 0.030 Ohms Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 7-2004 Characteristic / Test Conditions 050-7162 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol Ciss APT30M30B2FLL_LFLL Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg Total Gate Charge 3 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 150V tf ID = 100A @ 25°C RG = 0.6Ω 8 INDUCTIVE SWITCHING @ 25°C 925 Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 7 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy VDD = 200V, VGS = 15V nC ns 1345 ID = 100A, RG = 5Ω 7 INDUCTIVE SWITCHING @ 125°C UNIT pF 110 140 41 70 15 22 35 ID = 100A @ 25°C Turn-off Delay Time MAX 7030 1895 VDD = 150V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 1055 VDD = 200V VGS = 15V 1485 ID = 100A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD dv/ Characteristic / Test Conditions MIN TYP 100 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 415 Diode Forward Voltage 2 (VGS = 0V, IS = -100A) 1.3 Volts 8 V/ns Peak Diode Recovery dt MAX dv/ dt 6 t rr Reverse Recovery Time (IS = -100A, di/dt = 100A/µs) Tj = 25°C 250 Tj = 125°C 500 Q rr Reverse Recovery Charge (IS = -100A, di/dt = 100A/µs) Tj = 25°C 1.4 Tj = 125°C 4.9 IRRM Peak Recovery Current (IS = -100A, di/dt = 100A/µs) Tj = 25°C 14 Tj = 125°C 25 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient MIN TYP MAX 0.18 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.7 0.12 0.10 0.5 Note: 0.08 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 7-2004 050-7162 Rev B 0.18 0.14 0.3 0.06 t2 0.1 0.02 0 Peak TJ = PDM x ZθJC + TC 0.05 10-5 t1 Duty Factor D = t1/t2 0.04 SINGLE PULSE 10-4 °C/W 4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A 5 The maximum current is limited by lead temperature 6 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID100A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C 7 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.20 0.16 UNIT 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT30M30B2FLL_LFLL 250 VGS =15 &10V 0.0271 Power (Watts) 0.0656 0.0859 0.00899F 0.0202F 0.293F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. ( ”C) 8V 200 7.5V 150 7V 100 6.5 6V 50 5.5V Case temperature 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 150 100 TJ = +25°C 50 TJ = +125°C 0 TJ = -55°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 100 80 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE NORMALIZED TO = 10V @ I = 50A GS D 1.20 1.10 VGS=10V 1.00 VGS=20V 0.90 0.80 0 20 40 60 80 100 120 140 160 180 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 1.2 I D V = 50A GS = 10V 2.0 1.5 1.0 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, RDS(ON) vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.30 1.15 120 0.0 -50 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 7-2004 200 1.40 050-7162 Rev B ID, DRAIN CURRENT (AMPERES) 250 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL OPERATION HERE LIMITED BY RDS (ON) 10,000 100 100µS 10 1mS D = 100A VDS=60V 12 VDS=150V VDS=240V 8 4 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE 0 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 300 100 TJ =+150°C TJ =+25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 200 120 V 180 td(off) 100 80 V DD R G G = 300V T = 125°C J 60 L = 100µH 40 = 5Ω T = 125°C J L = 100µH 140 = 5Ω = 200V DD R 160 tr and tf (ns) td(on) and td(off) (ns) Crss 100 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I Coss 1,000 10 1 10 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 Ciss 10mS TC =+25°C TJ =+150°C SINGLE PULSE 1 APT30M30B2FLL_LFLL 20,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 400 tf 120 100 80 tr 60 td(on) 40 20 20 0 40 60 0 40 80 100 120 140 160 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 100 120 140 160 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT V DD R G V = 200V D SWITCHING ENERGY (µJ) 7-2004 050-7162 Rev B L = 100µH E ON includes 2000 Eoff 1500 1000 Eon 500 60 80 100 120 140 160 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (µJ) T = 125°C diode reverse recovery. 0 40 DD I = 5Ω J 2500 80 5000 3500 3000 60 = 200V = 100A T = 125°C 4000 J L = 100µH EON includes Eoff diode reverse recovery. 300 2000 Eon 1000 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT30M30B2FLL_LFLL 90% Gate Voltage 10% Gate Voltage TJ125°C td(off) td(on) tr 5% Drain Voltage tf Drain Current 90% 5% 10% TJ125°C 90% 10% Drain Voltage Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions 0 Drain Current Figure 19, Turn-off Switching Waveforms and Definitions APT60DS30 V DS ID V DD G D.U.T. Figure 20, Inductive Switching Test Circuit T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain Source 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 5.45 (.215) BSC 2-Plcs. 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) Dimensions in Millimeters and (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source 7-2004 4.50 (.177) Max. 25.48 (1.003) 26.49 (1.043) 050-7162 Rev B Drain 20.80 (.819) 21.46 (.845)