APT30M36JFLL 300V POWER MOS 7 R 76A 0.036Ω Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS Symbol 27 2 T- D G ® • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg S S FREDFET D G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT30M36JFLL UNIT Drain-Source Voltage 300 Volts ID Continuous Drain Current @ TC = 25°C 76 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 463 Watts Linear Derating Factor 3.70 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 304 -55 to 150 °C 300 Amps 76 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 50 4 mJ 2500 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 38A) TYP MAX UNIT Volts 0.036 Ohms Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com µA 7-2004 Characteristic / Test Conditions 050-7158 Rev B Symbol APT30M36JFLL DYNAMIC CHARACTERISTICS Symbol Ciss Characteristic Test Conditions Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V Crss Reverse Transfer Capacitance f = 1 MHz Qg 3 Total Gate Charge Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time RESISTIVE SWITCHING VGS = 15V VDD = 150V tf ID = 76A @ 25°C Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy INDUCTIVE SWITCHING @ 25°C 6 Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 660 VDD = 200V, VGS = 15V 690 ID = 76A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C 6 nC 5 RG = 0.6Ω Eon UNIT pF 75 115 35 45 15 28 29 ID = 76A @ 25°C Turn-off Delay Time MAX 6480 1540 VDD = 150V Rise Time td(off) TYP VGS = 10V Qgs tr MIN µJ 770 VDD = 200V, VGS = 15V ID = 76A, RG = 5Ω 740 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions IS ISM VSD dv/ MIN TYP MAX 76 Continuous Source Current (Body Diode) Amps Pulsed Source Current 1 (Body Diode) 304 Diode Forward Voltage 2 (VGS = 0V, IS = -76A) 1.3 Volts 8 V/ns Peak Diode Recovery dt UNIT dv/ dt 5 t rr Reverse Recovery Time (IS = -76A, di/dt = 100A/µs) Tj = 25°C 240 Tj = 125°C 500 Q rr Reverse Recovery Charge (IS = -76A, di/dt = 100A/µs) Tj = 25°C 1.1 Tj = 125°C 5.2 IRRM Peak Recovery Current (IS = -76A, di/dt = 100A/µs) Tj = 25°C 12 Tj = 125°C 22 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.27 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7158 Rev B 7-2004 0.30 0.9 t1 t2 Duty Factor D = t1/t2 SINGLE PULSE 0.05 0 10-5 10-4 °C/W 4 Starting Tj = +25°C, L = 0.87mH, RG = 25Ω, Peak IL = 76A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID76A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25 UNIT Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1 Typical Performance Curves 200 RC MODEL 0.0260 Power (watts) 10V 0.00119F 0.0585 0.0354F 0.185 0.463F ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) APT30M36JFLL VGS=15V 9V 160 8V 120 7.5V 80 7V 40 6.5V Case temperature. (°C) 6V VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 200 150 100 TJ = +25°C 50 TJ = +125°C 0 TJ = -55°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 80 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 D 1.2 VGS=10V 1.1 1.0 VGS=20V 0.9 0.8 0 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -50 = 38A GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 D 1.3 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) I V NORMALIZED TO = 10V @ I = 38A GS 1.1 1.0 0.9 0.8 7-2004 ID, DRAIN CURRENT (AMPERES) V 1.20 70 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.4 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7158 Rev B ID, DRAIN CURRENT (AMPERES) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 250 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 10,000 50 100µS 10 1mS 5 10mS TC =+25°C TJ =+150°C SINGLE PULSE = 76A D VDS= 60V 12 VDS=150V 10 VDS= 240V 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE td(off) 70 100 TJ =+150°C 50 TJ =+25°C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE V DD R G = 200V = 5Ω T = 125°C tf J L = 100µH V 50 DD R G 100 = 200V tr and tf (ns) td(on) and td(off) (ns) Crss 120 60 = 5Ω T = 125°C J 40 L = 100µH 30 td(on) 20 80 tr 60 40 20 10 0 40 60 0 40 100 120 140 ID (A) FIGURE 14, DELAY TIMES vs CURRENT 80 100 120 140 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT DD R G = 5Ω Eoff T = 125°C J L = 100µH EON includes diode reverse recovery. 1000 500 Eon 2500 Eoff 2000 1500 Eon V 1000 I 60 80 100 120 140 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT DD D = 200V = 76A T = 125°C J 500 0 40 80 = 200V SWITCHING ENERGY (µJ) V 1500 60 3000 2000 SWITCHING ENERGY (µJ) 100 140 80 7-2004 500 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I 14 Coss 1,000 10 1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 050-7158 Rev B Ciss 5,000 100 1 APT30M36JFLL 20,000 OPERATION HERE LIMITED BY RDS (ON) C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 304 0 L = 100µH E ON includes diode reverse recovery. 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT30M36JFLL 90% 10% Gate Voltage Gate Voltage TJ125°C td(off) td(on) tf tr Drain Current 90% 5% 5% 10% TJ125°C Drain Voltage 90% 10% Drain Voltage 0 Drain Current Switching Energy Switching Energy Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT60DS30 V DD ID V DS G D.U.T. Figure 20, Inductive Switching Test Circuit SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 7-2004 r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 050-7158 Rev B 7.8 (.307) 8.2 (.322)