APT30M40B2VR
APT30M40LVR
300V 76A 0.040W
POWER MOS V ®
B2VR
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout..
T-MAX™
TO-264
LVR
• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular T-MAX™ or TO-264
Package
D
G
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M40
UNIT
300
Volts
Drain-Source Voltage
76
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
VGSM
PD
TJ,TSTG
304
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
76
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
Volts
76
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.040
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Ohms
µA
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
UNIT
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
EUROPE
Chemin de Magret
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
050-5541 Rev D 11-2001
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30M40 B2VR - LVR
Characteristic
Test Conditions
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
8500
10200
Coss
Output Capacitance
VDS = 25V
1500
2100
Reverse Transfer Capacitance
f = 1 MHz
390
585
Crss
Qg
Total Gate Charge
Qgs
3
VGS = 10V
285
425
VDD = 0.5 VDSS
56
85
ID = ID[Cont.] @ 25°C
120
180
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
VGS = 15V
16
32
VDD = 0.5 VDSS
20
40
ID = ID[Cont.] @ 25°C
48
72
RG = 0.6W
4
8
TYP
MAX
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
Characteristic / Test Conditions
MIN
76
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
304
Diode Forward Voltage
2
(VGS = 0V, IS = -ID[Cont.])
1.3
UNIT
Amps
Volts
t rr
Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/µs)
530
ns
Q rr
Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/µs)
11.5
µC
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RqJC
Junction to Case
RqJA
Junction to Ambient
TYP
MAX
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 870µH, R
j
G
= 25W, Peak IL = 76A
APT Reserves the right to change, without notice, the specifications and information contained herein.
D=0.5
0.1
0.05
0.2
0.1
0.05
Note:
0.01
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
q
050-5541 Rev D 11-2001
0.3
0.02
0.005
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
UNIT
°C/W
APT30M40 B2VR - LVR
150
VGS=6.5V, 7V, 10V & 15V
120
6V
90
5.5V
60
5V
30
4.5V
VGS=15V
ID, DRAIN CURRENT (AMPERES)
4V
0
0
30
60
90
120
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
TJ = -55°C
TJ = +25°C
120
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
90
60
TJ = +125°C
30
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
60
40
20
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
90
5.5V
60
5V
30
4.5V
1.3
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.2
1.1
VGS=10V
1.0
VGS=20V
0.9
0.8
0
40
80
120
160
200
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.20
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
6V
4V
0
1
2
3
4
5
6
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
80
VGS=6.5V & 7V
0
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
150
VGS=10V
120
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5541 Rev D 11-2001
ID, DRAIN CURRENT (AMPERES)
150
APT30M40 B2VR - LVR
30,000
10µS
OPERATION HERE
LIMITED BY RDS (ON)
100µS
100
1mS
10
10mS
5
100mS
DC
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = I [Cont.]
D
VDS=60V
16
VDS=150V
12
VDS=240V
8
4
0
100
200
300
400
500
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
Crss
1,000
500
400
TJ =+150°C
50
10
5
1
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
19.81 (.780)
20.32 (.800)
2.29 (.090)
2.69 (.106)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Gate
Drain
Source
050-5541 Rev D 11-2001
Source
2.21 (.087)
2.59 (.102)
TJ =+25°C
100
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Coss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
D
5,000
100
1
5
10
50 100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
Ciss
10,000
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
400
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
Dimensions in Millimeters and (Inches)
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058