APT30M60J 600V, 31A, 0.15Ω Max N-Channel MOSFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 IS OTO P ® D APT30M60J Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 31 Continuous Drain Current @ TC = 100°C 19 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1200 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 21 A 1 160 Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 355 RθJC Junction to Case Thermal Resistance 0.35 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com °C/W 0.15 -55 150 °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Rev C 7-2011 Characteristic 050-8078 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 600 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 21A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 600V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.57 0.12 4 -10 0.15 5 100 500 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 3 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT30M60J Min Test Conditions VDS = 50V, ID = 21A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 42 5890 90 800 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 420 VGS = 0V, VDS = 0V to 400V 220 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 400V, ID = 21A tr td(off) tf Turn-Off Delay Time 215 45 90 48 55 145 44 VGS = 0 to 10V, ID = 21A, VDS = 300V RG = 4.7Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Diode Forward Voltage ISD = 21A, TJ = 25°C, VGS = 0V trr Reverse Recovery Time ISD = 21A 3 Qrr Reverse Recovery Charge Peak Recovery dv/dt Typ Max Unit 31 A G VSD dv/dt Min D 160 S diSD/dt = 100A/μs, TJ = 25°C ISD ≤ 21A, di/dt ≤1000A/μs, VDD = 400V, TJ = 125°C 1.0 705 15.2 V ns μC 8 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 5.44mH, RG = 4.7Ω, IAS = 21A. 050-8078 Rev C 7-2011 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.32E-8/VDS^2 + 3.49E-8/VDS + 1.30E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT30M60J 160 V GS 70 = 10V 120 100 TJ = 25°C 80 60 40 50 6V 40 30 20 5.5V TJ = 125°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 5V 4.5V 0 Figure 2, Output Characteristics 160 NORMALIZED TO VGS = 10V @ 21A 2.5 2.0 1.5 1.0 0.5 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 120 100 TJ = -55°C 80 TJ = 25°C 60 TJ = 125°C 40 20 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 80 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 70 TJ = -55°C 60 C, CAPACITANCE (pF) TJ = 25°C 50 TJ = 125°C 40 30 20 1000 Coss 100 Crss 10 0 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 10 20 30 40 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 120V 10 VDS = 300V 8 6 VDS = 480V 4 2 0 0 160 ID = 21A 14 0 10 50 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) 0 140 120 100 TJ = 25°C 80 60 TJ = 150°C 40 20 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev C 7-2011 gfs, TRANSCONDUCTANCE VDS> ID(ON) x RDS(ON) MAX. 140 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 050-8078 0 GS 10 TJ = 150°C 20 = 7&8V V J 60 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) T = 125°C TJ = -55°C 140 APT30M60J 200 200 100 100 IDM 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 13μs 100μs 1ms 10ms Rds(on) 1 100ms DC line 0.1 13μs Rds(on) TJ = 150°C TC = 25°C 1 100μs 1ms 10ms 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 TJ = 125°C TC = 75°C 1 10 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 0.15 t1 0.3 0.10 t2 t1 = Pulse Duration t 0.05 0 0.1 SINGLE PULSE 0.05 10 -5 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C 10 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration -4 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 7-2011 38.0 (1.496) 38.2 (1.504) 050-8078 14.9 (.587) 15.1 (.594) Rev C 3.3 (.129) 3.6 (.143) * Source 30.1 (1.185) 30.3 (1.193) 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Drai n * Emitter terminals are shorte d internally. Current handlin g capability is equal for either Source terminal . * Source Dimensions in Millimeters (Inches) Gate 1.0