APT30M61B_SLL_A.pdf

APT30M61BLL
APT30M61SLL
300V 54A 0.061Ω
R
POWER MOS 7
MOSFET
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30M61BLL-SLL
UNIT
300
Volts
Drain-Source Voltage
54
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
PD
TJ,TSTG
216
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
54
(Repetitive and Non-Repetitive)
1
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 27A)
TYP
MAX
Volts
0.061
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
1-2004
Characteristic / Test Conditions
050-7156 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30M61BLL - SLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
920
Reverse Transfer Capacitance
f = 1 MHz
41
VGS = 10V
64
VDD = 150V
23
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
ID = 54A @ 25°C
tf
20
VDD = 150V
ID = 54A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
13
INDUCTIVE SWITCHING @ 25°C
6
367
VDD = 200V, VGS = 15V
ID = 54A, RG = 5Ω
319
INDUCTIVE SWITCHING @ 125°C
6
ns
36
RG = 0.6Ω
Fall Time
nC
12
VGS = 15V
Turn-off Delay Time
pF
26
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
3720
VGS = 0V
3
MAX
µJ
451
VDD = 200V, VGS = 15V
ID = 54A, RG = 5Ω
348
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
54
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -54A, dl S/dt = 100A/µs)
440
ns
Q
Reverse Recovery Charge (IS = -54A, dl S/dt = 100A/µs)
5.8
µC
rr
dv/
dt
Peak Diode Recovery
dv/
216
(Body Diode)
1.3
(VGS = 0V, IS = -54A)
dt
Amps
Volts
5
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.31
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.89mH, RG = 25Ω, Peak IL = 54A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -54A di/dt ≤ 700A/µs VR ≤ 300V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.25
0.7
0.20
0.5
0.15
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7156 Rev A
1-2004
0.35
0.30
0.3
0.10
t1
t2
0.05
0
SINGLE PULSE
0.1
10-5
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-4
°C/W
40
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT30M61BLL - SLL
180
15V
RC MODEL
Junction
temp. (°C)
0.119
0.0135F
Power
(watts)
0.191
0.319F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
160
10V
140
9V
120
100
8V
80
60
40
7V
20
6V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
160
120
100
80
TJ = -55°C
60
TJ = +25°C
40
TJ = +125°C
20
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
50
40
30
20
10
0
1.15
1.10
1.05
1.00
0.95
0.90
-50
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
D
V
= 27A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1-2004
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
V
= 10V @ 27A
1.20
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.40
050-7156 Rev A
ID, DRAIN CURRENT (AMPERES)
140
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Typical Performance Curves
APT30M61BLL - SLL
10,000
OPERATION HERE
LIMITED BY RDS (ON)
100
100µS
10
1mS
D
14
VDS = 60V
12
VDS = 150V
VDS = 240V
8
6
4
2
0
1,000
Coss
100
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = 54
10
Ciss
Crss
1
5
10
50 100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
5,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
216
0
10 20 30 40 50 60 70 80 90 100
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
90
50
V
80
td(off)
= 200V
DD
R
G
= 5Ω
T = 125°C
40
V
30
DD
R
G
tf
J
70
L = 100µH
60
= 200V
tr and tf (ns)
td(on) and td(off) (ns)
TJ =+25°C
= 5Ω
T = 125°C
J
L = 100µH
20
50
40
30
td(on)
20
10
tr
10
0
10
V
DD
800
R
G
30
0
10
50
60
70
80
90
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
900
20
40
50
60
70
80
90
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1200
= 200V
I
1000
T = 125°C
L = 100µH
600
diode reverse recovery.
EON includes
500
Eon
400
300
200
Eoff
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
1-2004
J
050-7156 Rev A
V
= 5Ω
700
20
DD
D
30
40
= 200V
= 54A
Eoff
T = 125°C
J
L = 100µH
EON includes
800
diode reverse recovery.
600
Eon
400
200
100
0
10
0
20
30
40
50 60
70 80 90
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT30M61BLL - SLL
Gate Voltage
10 %
90%
Gate Voltage
T = 125 C
J
td(on)
T = 125 C
J
t
d(off)
tr
Drain Current
90%
Drain Voltage
90 %
t
5%
f
5%
10 %
10%
Drain Voltage
Drain Current
Switching Energy
0
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DS30
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7156 Rev A
0.46 (.018)
0.56 (.022) {3 Plcs}
1-2004
3.50 (.138)
3.81 (.150)
Similar pages