APT32F120J_D.pdf

APT32F120J
1200V, 33A, 0.32Ω Max, trr ≤430ns
N-Channel FREDFET
S
S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
at very high frequency.
D
G
SO
2
T-
27
"UL Recognized"
file # E145592
IS OTO P ®
D
APT32F120J
Single die FREDFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI
• ZVS phase shifted and other full full bridge
• Low trr for high reliability
• Half bridge
• Ultra low Crss for improved noise immunity
• PFC and other boost converter
• Low gate charge
• Buck converter
• Avalanche energy rated
• Single and two switch forward
• RoHS compliant
• Flyback
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
33
Continuous Drain Current @ TC = 100°C
21
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
2700
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
25
A
1
195
Thermal and Mechanical Characteristics
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
960
RθJC
Junction to Case Thermal Resistance
0.13
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
VIsolation
RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
WT
Torque
Package Weight
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
-55
150
°C/W
°C
V
2500
1.03
oz
29.2
g
10
in·lbf
1.1
N·m
8-2011
TJ,TSTG
0.11
Rev D
Min
Characteristic
050-8090
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
1200
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 25A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1200V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.41
0.27
4
-10
0.32
5
TJ = 25°C
VGS = 0V
250
1000
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
2.5
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT32F120J
Min
Test Conditions
VDS = 50V, ID = 25A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Typ
58
18200
215
1340
Max
Unit
S
pF
520
VGS = 0V, VDS = 0V to 800V
270
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 800V, ID = 25A
tr
td(off)
tf
Turn-Off Delay Time
560
90
265
100
60
315
90
VGS = 0 to 10V, ID = 25A,
VDS = 600V
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
dv/dt
Peak Recovery dv/dt
Test Conditions
Min
Typ
D
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Max
33
A
G
195
S
ISD = 25A, TJ = 25°C, VGS = 0V
TJ = 25°C
TJ = 125°C
ISD = 25A 3
TJ = 25°C
diSD/dt = 100A/μs
TJ = 125°C
Unit
TJ = 25°C
TJ = 125°C
ISD ≤ 25A, di/dt ≤1000A/μs, VDD = 100V,
TJ = 125°C
402
703
2.8
9
14
24
1.1
546
960
V
ns
μC
A
25
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 8.64mH, RG = 25Ω, IAS = 25A.
050-8090
Rev D
8-2011
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT32F120J
140
V
GS
45
= 10V
T = 125°C
V
ID, DRIAN CURRENT (A)
ID, DRAIN CURRENT (A)
120
100
TJ = -55°C
80
60
TJ = 25°C
40
35
30
25
5V
20
15
10
TJ = 125°C
5
TJ = 150°C
0
0
5
10
15
20
25
30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
0
3.0
NORMALIZED TO
VGS = 10V @ 25A
2.5
VDS> ID(ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
2.0
1.5
1.0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
160
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
0.5
120
100
TJ = -55°C
80
TJ = 25°C
60
TJ = 125°C
40
20
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
70
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
30,000
TJ = -55°C
60
TJ = 25°C
50
TJ = 125°C
40
Ciss
10,000
C, CAPACITANCE (pF)
gfs, TRANSCONDUCTANCE
= 6, 7, 8 & 9V
GS
4.5V
20
0
J
40
30
20
1000
Coss
100
Crss
10
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
200
400
600
800 1000 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
10
VDS = 240V
8
VDS = 600V
4
VDS = 960V
2
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
180
160
140
120
100
TJ = 25°C
80
60
TJ = 150°C
40
20
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
8-2011
12
6
0
200
ID = 25A
14
0
10
30
Rev D
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
5
050-8090
0
ISD, REVERSE DRAIN CURRENT (A)
0
APT32F120J
250
250
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
10
13μs
100μs
1ms
Rds(on)
1
10ms
100ms
0.1
TJ = 125°C
TC = 75°C
1
IDM
13μs
10
100μs
1ms
Rds(on)
TJ = 150°C
TC = 25°C
1
0.1
DC line
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
10ms
100ms
C
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
D = 0.9
0.12
0.10
0.7
0.08
0.5
0.06
Note:
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.14
0.3
0.04
t1
t2
0.02
0
t1 = Pulse Duration
t
0.1
0.05
10-5
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
8-2011
14.9 (.587)
15.1 (.594)
Rev D
3.3 (.129)
3.6 (.143)
38.0 (1.496)
38.2 (1.504)
050-8090
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drai n
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal .
* Source
Dimensions in Millimeters and (Inches)
Gate
1.0
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