APT32M80J_C.pdf

APT32M80J
800V, 33A, 0.19Ω Max
N-Channel MOSFET
S
S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar strip design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
D
G
SO
2
T-
27
"UL Recognized"
IS OTO P ®
file # E145592
D
APT32M80J
G
Single die MOSFET
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI/RFI
• PFC and other boost converter
• Low RDS(on)
• Buck converter
• Ultra low Crss for improved noise immunity
• Two switch forward (asymmetrical bridge)
• Low gate charge
• Single switch forward
• Avalanche energy rated
• Flyback
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
33
Continuous Drain Current @ TC = 100°C
20
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1979
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
24
A
1
173
Thermal and Mechanical Characteristics
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
543
RθJC
Junction to Case Thermal Resistance
0.23
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
VIsolation
RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.)
WT
Torque
Package Weight
Terminals and Mounting Screws.
Microsemi Website - http://www.microsemi.com
0.15
-55
150
°C/W
°C
V
2500
1.03
oz
29.2
g
10
in·lbf
1.1
N·m
Rev C 7-2011
Min
Characteristic
050-8168
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
800
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID =24A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
VDS = 1200V
VGS = 0V
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Typ
Max
1.41
0.16
4
-10
0.19
5
TJ = 25°C
100
500
±100
TJ = 125°C
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
3
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT32M80J
Min
Test Conditions
VDS = 50V, ID = 24A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Typ
43
9326
159
927
Max
Unit
S
pF
438
VGS = 0V, VDS = 0V to 533V
217
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 533V, ID = 24A
tr
td(off)
tf
Turn-Off Delay Time
303
51
155
53
76
231
67
VGS = 0 to 10V, ID = 24A,
VDS = 400V
RG = 2.2Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Diode Forward Voltage
ISD = 24A, TJ = 25°C, VGS = 0V
Reverse Recovery Time
ISD = 24A, VDD = 100V 3
Qrr
Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Typ
Max
Unit
32
A
G
trr
VSD
Min
D
173
S
diSD/dt = 100A/μs, TJ = 25°C
ISD ≤ 24A, di/dt ≤1000A/μs, VDD = 100V,
TJ = 125°C
1.0
1000
20
V
ns
μC
10
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 6.9mH, RG = 25Ω, IAS = 24A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10.
050-8168
Rev C 7-2011
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
100
V
GE
APT32M80J
60
= 10V
TJ= 55°C
50
70
ID, DRAIN CURRENT (A)
TJ= 25°C
60
50
TJ= 125°C
30
TJ= 150°C
20
10 & 15V
40
5.5V
30
5V
20
10
4.5V
4V
10
3.5
0
0
5
10
15
20
25
30
35
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 2, Output Characteristics
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
160
NORMALIZED TO
VDS> ID(ON) x RDS(ON) MAX.
VGS = 10V @ 24A
3.0
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
ID, DRAIN CURRENT (A)
2.5
2.0
1.5
1.0
0.5
120
TJ= 55°C
100
80
TJ= 25°C
60
40
TJ= 125°C
20
0
0
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 3, RDS(ON) vs Junction Temperature
60
0
2
4
6
8
VGS , GATE-TO-SOURCE VOLTAGE (V)
FIGURE 4, Transfer Characteristics
10,000
Ciss
TJ = -55°C
50
TJ = 25°C
40
TJ = 125°C
30
20
1,000
Coss
100
Crss
10
0
10
0
5
10
15
20
25
30
35
ID, DRAIN CURRENT (A)
FIGURE 5, Gain vs Drain Current
12
VDS = 120V
VDS = 300V
8
6
VDS = 480V
4
2
0
0
200
400
600
80
200
ID = 33A
10
0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 6, CAPACITANCE VS DRAIN-TO-SOURCE VOLTAGE
100
200
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 7, Gate Charge vs Gate-to-Source Voltage
ISD, REVERSE DRAIN CURRENT (A)
VGS, GATE-TOSOURCE VOLTAGE (V)
10
160
120
80
TJ = 25°C
TJ = 150°C
40
0
0
0.4
0.8
1.2
1.6
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev C 7-2011
g fs, TRANSCONDUCTANCE
0
C, CAPACITANCE (pF)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
6 & 6.5V
050-8168
ID, DRAIN CURRENT (A)
80
40
T = 125°C
J
90
APT32M80J
1000
100
100
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1000
IDM
13μs
100μs
1ms
10ms
Rds(on)
10
1
100ms
1
13μs
10
1
100μs
1ms
Rds(on)
10ms
TJ = 150°C
100ms
TC = 25°C
DC line
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
TJ = 125°C
TC = 75°C
0.1
IDM
C
0.1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
D = 0.9
0.20
0.7
0.15
0.5
Note:
0.10
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.25
0.3
t1
t2
0.05
t1 = Pulse Duration
0.1
t
0.05
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
SINGLE PULSE
0
10-5
10
-4
10 -3
10 -2
10 -1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
Rev C 7-2011
14.9 (.587)
15.1 (.594)
* Source
30.1 (1.185)
30.3 (1.193)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Drai n
* Emitter terminals are shorte d
internally. Current handlin g
capability is equal for either
Source terminal .
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters (Inches)
050-8168
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
Gate
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