APT40M70B2_LVFR(G)_A.pdf

400V
57A
APT40M70B2VFR
Ω
0.070Ω
APT40M70LVFR
APT40M70B2VFRG* APT40M40LVFRG*
*G
®
POWER MOS V
Denotes RoHS Compliant, Pb Free Terminal Finish.
FREDFET
B2VFR
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
• Faster Switching
• FAST RECOVERY BODY DIODE
D
G
• Lower Leakage
S
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
APT40M70B2_LVFR(G)
UNIT
Drain-Source Voltage
400
Volts
ID
Continuous Drain Current @ TC = 25°C
57
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
520
Watts
Linear Derating Factor
4.16
W/°C
Symbol
VDSS
PD
TJ,TSTG
Parameter
1
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
57
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
-55 to 150
Operating and Storage Junction Temperature Range
1
Amps
228
Amps
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
400
Volts
57
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.070
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
3-2006
BVDSS
Characteristic / Test Conditions
050-5850 Rev A
Symbol
APT40M70B2_LVFR(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
7410
8890
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
1140
1600
Reverse Transfer Capacitance
f = 1 MHz
450
675
Crss
Qg
Total Gate Charge
Qgs
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VGS = 10V
330
495
VDD = 200V
40
40
ID = 57A @ 25°C
125
190
VGS = 15V
16
32
VDD = 200V
16
32
ID = 57A @ 25°C
55
80
RG = 0.6Ω
5
10
TYP
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
IS
ISM
MIN
57
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
228
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -57A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
500
Q rr
Reverse Recovery Charge
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
1.6
Tj = 125°C
5.5
IRRM
Peak Recovery Current
(IS = -57A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
27
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.24
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
D=0.5
0.1
0.2
0.1
0.05
0.005
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5850 Rev A
3-2006
0.3
0.01
0.02
0.01
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 1.54mH, RG = 25Ω, Peak IL = 57A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID57A di/dt ≤ 700A/µs VR ≤400V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.05
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
APT40M70B2_LVFR(G)
100
VGS=6V, 7V, 10V & 15V
80
5.5V
60
5V
40
4.5V
20
ID, DRAIN CURRENT (AMPERES)
VGS=15V
VGS=10V
80
VGS=6V & 7V
60
5V
40
4.5V
20
4V
4V
0
0
TJ = +25°C
80
60
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
TJ = +125°C
20
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.6
1.4
VGS=10V
1.2
VGS=20V
1.0
0.8
0
40
80
120
160
200
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
25
I
D
= 0.5 I
D
V
GS
1.00
0.95
-50
1.2
[Cont.]
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
2.5
1.10
0.90
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.15
60
0
1.8
1.1
1.0
0.9
0.8
3-2006
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
0
2
4
6
8
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
50
100
150
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
5.5V
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5850 Rev A
ID, DRAIN CURRENT (AMPERES)
100
APT40M70B2_LVFR(G)
OPERATION HERE
LIMITED BY RDS (ON)
100
30,000
10µS
100µS
1mS
10
10mS
5
100mS
DC
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
I = I [Cont.]
D
D
VDS=80V
16
VDS=200V
VDS=320V
12
Coss
1,000
500
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20
5,000
8
4
0
100
200
300
400
500
600
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
T-MAXTM (B2) Package Outline (B2VFR)
TO-264 (L) Package Outline (LVFR)
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Crss
100
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1
5 10
50 100
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
Ciss
10,000
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
300
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
050-5850 Rev A
3-2006
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
Similar pages