APT40M70JVFR
400V
53A 0.070Ω
Ω
POWER MOS V® FREDFET
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• FAST RECOVERY BODY DIODE
D
G
• Popular SOT-227 Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT40M70JVFR
UNIT
400
Volts
Drain-Source Voltage
53
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
450
Watts
Linear Derating Factor
3.6
W/°C
VGSM
PD
TJ,TSTG
212
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
-55 to 150
°C
300
Amps
53
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
2500
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
400
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
TYP
MAX
UNIT
Volts
(VGS = 10V, 26.5A)
0.07
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V)
250
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 320V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
2-2005
Characteristic / Test Conditions
050-5893 Rev A
Symbol
DYNAMIC CHARACTERISTICS
APT40M70JVFR
Characteristic
Symbol
Test Conditions
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
TYP
MAX
VGS = 0V
7410
8890
VDS = 25V
1140
1600
f = 1 MHz
450
675
VGS = 10V
330
495
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
40
127
60
190
VGS = 15V
16
32
VDD = 0.5 VDSS
16
32
ID = ID [Cont.] @ 25°C
54
80
RG = 0.6Ω
5
10
TYP
MAX
3
Fall Time
MIN
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
53
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
dt
Peak Diode Recovery dv/dt
212
(Body Diode)
(VGS = 0V, IS = -ID [Cont.])
5
UNIT
Amps
1.3
Volts
15
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
500
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
1.6
Tj = 125°C
5.5
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
27
ns
µC
Amps
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.28
40
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
2500
10
0.1
0.2
0.05
0.1
0.05
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
2-2005
050-5893 Rev A
D=0.5
0.005
t1
0.01
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
lb•in
4 Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 53A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID53A di/dt ≤ 700A/µs VR ≤100V TJ ≤ 150°C
0.3
0.02
°C/W
Volts
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.01
UNIT
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT40M70JVFR
100
100
80
5.5V
60
5V
40
4.5V
20
VGS=15V
ID, DRAIN CURRENT (AMPERES)
VGS=10V
80
VGS=6V & 7V
60
5V
40
4.5V
20
4V
4V
0
0
TJ = +25°C
80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
TJ = +125°C
20
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
60
50
40
30
20
10
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.6
1.4
VGS=10V
1.2
VGS=20V
1.0
0.8
0
40
80
120
160
200
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
1.8
1.1
1.0
0.9
0.8
2-2005
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
0
2
4
6
8
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
50
100
150
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
5.5V
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5893 Rev A
ID, DRAIN CURRENT (AMPERES)
VGS=6V, 7V, 10V & 15V
APT40M70JVFR
10µS
OPERATION HERE
LIMITED BY RDS (ON)
100
30,000
100µS
1mS
10
5
10mS
1
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = I [Cont.]
D
VDS=80V
VDS=200V
VDS=320V
12
8
4
0
Coss
1,000
500
Crss
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
5,000
100
1
5 10
50 100
400
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Ciss
10,000
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
300
0
100
200
300
400
500
600
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
50
10
5
1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
14.9 (.587)
15.1 (.594)
2-2005
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
050-5893 Rev A
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
"UL Recognized" File No. E145592
ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.