APT38F50J 500V, 38A, 0.10Ω Max, trr ≤280ns N-Channel FREDFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. D G SO 2 T- 27 "UL Recognized" file # E145592 IS OTO P ® D APT38F50J Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 38 Continuous Drain Current @ TC = 100°C 24 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1200 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 28 A 1 175 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 355 RθJC Junction to Case Thermal Resistance 0.35 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m 8-2011 TJ,TSTG 0.15 Rev D Min Characteristic 050-8130 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 28A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 500V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.60 0.085 4 -10 0.10 5 250 1000 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT38F50J Min Test Conditions VDS = 50V, ID = 28A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 42 8800 120 945 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 550 VGS = 0V, VDS = 0V to 333V 275 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 333V, ID = 28A tr td(off) tf Turn-Off Delay Time 220 50 100 38 45 100 33 VGS = 0 to 10V, ID = 28A, VDS = 250V RG = 4.7Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min Typ D A 175 S ISD = 28A, TJ = 25°C, VGS = 0V 1.0 280 520 TJ = 25°C TJ = 125°C TJ = 25°C diSD/dt = 100A/μs TJ = 125°C VDD = 100V TJ = 25°C Unit 38 G ISD = 28A 3 Max TJ = 125°C ISD ≤ 28A, di/dt ≤1000A/μs, VDD = 333V, TJ = 125°C 1.20 3.07 10.1 14.5 V ns μC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 050-8130 Rev D 8-2011 2 Starting at TJ = 25°C, L = 3.06mH, RG = 25Ω, IAS = 28A. 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.04E-7/VDS^2 + 4.76E-8/VDS + 1.36E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT38F50J 200 V GS 100 = 10V T = 125°C TJ = -55°C 120 TJ = 25°C 80 40 0 6.5V TJ = 150°C 70 6V 60 50 40 5.5V 30 20 5V 10 TJ = 125°C 0 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 1, Output Characteristics 2.5 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 175 NORMALIZED TO VGS = 10V @ 28A VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 150 2.0 ID, DRAIN CURRENT (A) 1.5 1.0 0.5 125 TJ = -55°C 100 TJ = 25°C 75 TJ = 125°C 50 25 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 70 Ciss 10,000 TJ = -55°C TJ = 25°C 50 C, CAPACITANCE (pF) TJ = 125°C 40 30 20 1000 Coss 100 Crss 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 10 20 30 40 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 100V 10 VDS = 250V 8 6 VDS = 400V 4 2 0 0 175 ID = 28A 14 0 10 50 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 150 125 100 TJ = 25°C 75 TJ = 150°C 50 25 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 8-2011 0 ISD, REVERSE DRAIN CURRENT (A) 0 Rev D gfs, TRANSCONDUCTANCE 60 050-8130 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE = 7 & 10V GS 80 ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 160 V J 90 APT38F50J 250 250 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 10 13μs 100μs 1ms Rds(on) 10ms 1 100ms 0.1 13μs TJ = 150°C TC = 25°C 1 0.1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 100μs 1ms 10ms Rds(on) 100ms Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line DC line TJ = 125°C TC = 75°C 1 10 C 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: 0.15 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 0.3 0.10 t1 t2 t1 = Pulse Duration 0.05 0 t 0.1 0.05 10-5 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) Rev D 8-2011 3.3 (.129) 3.6 (.143) 050-8130 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drai n * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal . 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) Gate 1.0