APT38M50J_C.pdf

APT38M50J
500V, 38A, 0.10Ω Max
N-Channel MOSFET
S
S
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in flyback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
D
G
SO
2
T-
27
"UL Recognized"
file # E145592
IS OTO P ®
D
APT38M50J
Single die MOSFET
G
S
TYPICAL APPLICATIONS
FEATURES
• Fast switching with low EMI/RFI
• PFC and other boost converter
• Low RDS(on)
• Buck converter
• Ultra low Crss for improved noise immunity
• Two switch forward (asymmetrical bridge)
• Low gate charge
• Single switch forward
• Avalanche energy rated
• Flyback
• RoHS compliant
• Inverters
Absolute Maximum Ratings
Symbol
ID
Parameter
Unit
Ratings
Continuous Drain Current @ TC = 25°C
38
Continuous Drain Current @ TC = 100°C
24
A
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy 2
1200
mJ
IAR
Avalanche Current, Repetitive or Non-Repetitive
28
A
1
175
Thermal and Mechanical Characteristics
Min
Typ
Max
Unit
W
PD
Total Power Dissipation @ TC = 25°C
357
RθJC
Junction to Case Thermal Resistance
0.35
RθCS
Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG
Operating and Storage Junction Temperature Range
VIsolation
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT
Torque
Package Weight
Terminals and Mounting Screws.
0.15
-55
150
°C/W
°C
V
2500
1.03
oz
29.2
g
10
in·lbf
1.1
N·m
Rev C 7-2011
Characteristic
050-8075
Symbol
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
500
∆VBR(DSS)/∆TJ
Drain-Source On Resistance
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
VGS = 10V, ID = 28A
3
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
Dynamic Characteristics
Forward Transconductance
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 500V
TJ = 25°C
VGS = 0V
TJ = 125°C
Typ
Max
0.60
0.085
4
-10
0.10
5
100
500
±100
VGS = ±30V
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
TJ = 25°C unless otherwise specified
Parameter
gfs
3
VGS = VDS, ID = 2.5mA
Threshold Voltage Temperature Coefficient
IDSS
Symbol
Reference to 25°C, ID = 250μA
Breakdown Voltage Temperature Coefficient
RDS(on)
APT38M50J
Min
Test Conditions
VDS = 50V, ID = 28A
4
Effective Output Capacitance, Charge Related
Co(er)
5
Effective Output Capacitance, Energy Related
Max
42
8800
120
945
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr)
Typ
Unit
S
pF
550
VGS = 0V, VDS = 0V to 333V
275
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
Resistive Switching
Current Rise Time
VDD = 333V, ID = 28A
tr
td(off)
tf
Turn-Off Delay Time
220
50
100
38
45
100
33
VGS = 0 to 10V, ID = 28A,
VDS = 250V
RG = 4.7Ω 6 , VGG = 15V
Current Fall Time
nC
ns
Source-Drain Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
Diode Forward Voltage
ISD = 28A, TJ = 25°C, VGS = 0V
trr
Reverse Recovery Time
ISD = 28A 3
Qrr
Reverse Recovery Charge
Peak Recovery dv/dt
Typ
Max
Unit
38
A
G
VSD
dv/dt
Min
D
175
S
diSD/dt = 100A/μs, TJ = 25°C
ISD ≤ 28A, di/dt ≤1000A/μs, VDD = 333V,
TJ = 125°C
1
660
13.2
V
ns
μC
8
V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 3.06mH, RG = 4.7Ω, IAS = 28A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
050-8075
Rev C 7-2011
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = -2.04E-7/VDS^2 + 4.76E-8/VDS + 1.36E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT38M50J
200
V
GS
100
= 10V
T = 125°C
TJ = -55°C
J
90
V
ID, DRIAN CURRENT (A)
TJ = 25°C
80
40
0
TJ = 150°C
TJ = 125°C
60
50
40
30
20
5V
10
4.5V
0
0
5
10
15
20
25
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
6V
70
0
Figure 2, Output Characteristics
175
NORMALIZED TO
VGS = 10V @ 28A
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
2.0
1.5
1.0
0.5
125
TJ = -55°C
100
TJ = 25°C
75
TJ = 125°C
50
25
0
0
-55 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
70
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
20,000
60
TJ = 25°C
50
Ciss
10,000
TJ = -55°C
C, CAPACITANCE (pF)
TJ = 125°C
40
30
20
1000
Coss
100
Crss
10
0
VGS, GATE-TO-SOURCE VOLTAGE (V)
16
10
20
30
40
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
100
200
300
400
500
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
12
VDS = 100V
10
VDS = 250V
8
6
VDS = 400V
4
2
0
0
175
ID = 28A
14
0
10
50
50 100 150 200 250 300 350
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
ISD, REVERSE DRAIN CURRENT (A)
0
150
125
100
TJ = 25°C
75
TJ = 150°C
50
25
0
0
0.2 0.4
0.6 0.8
1.0 1.2 1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev C 7-2011
gfs, TRANSCONDUCTANCE
VDS> ID(ON) x RDS(ON) MAX.
150
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
Figure 1, Output Characteristics
2.5
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
050-8075
ID, DRAIN CURRENT (A)
120
= 7,8 & 10V
GS
80
160
APT38M50J
250
250
100
100
IDM
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
IDM
10
13μs
100μs
1ms
Rds(on)
10ms
1
100ms
0.1
13μs
TJ = 150°C
TC = 25°C
1
0.1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
100μs
1ms
10ms
Rds(on)
100ms
Scaling for Different Case & Junction
Temperatures:
ID = ID(T = 25°C)*(TJ - TC)/125
DC line
DC line
TJ = 125°C
TC = 75°C
1
10
C
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.35
D = 0.9
0.30
0.7
0.25
0.20
0.5
Note:
0.15
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.40
0.3
0.10
t1
t2
t1 = Pulse Duration
0.05
0
t
0.1
0.05
10-5
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
050-8075
Rev C 7-2011
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
* Source
30.1 (1.185)
30.3 (1.193)
8.9 (.350)
9.6 (.378)
Hex Nut M 4
(4 places )
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Drai n
* Emitter terminals are shorte d
internally. Current handlin g
capability is equal for either
Source terminal .
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters (Inches)
Gate
1.0
Similar pages