APT40GT60BR_D.pdf

APT40GT60BR
600V, 80A, VCE(ON) = 2.1V Typical
Thunderbolt IGBT®
The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using
Non-Punch-Through Technology, the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed.
TO
-24
7
Features
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
• Low Tail Current
• High Frequency Switching to 150KHz
• RoHS Compliant
• Ultra Low Leakage Current
G
C
E
C
G
E
All Ratings: TC = 25°C unless otherwise specified.
Maximum Ratings
Symbol Parameter
Ratings
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±20
IC1
Continuous Collector Current @ TC = 25°C
80
IC2
Continuous Collector Current @ TC = 105°C
40
ICM
Pulsed Collector Current 1
160
SSOA
PD
TJ, TSTG
Unit
Volts
Switching Safe Operating Area @ TJ = 150°C
Amps
160A @ 600V
Total Power Dissipation
Operating and Storage Junction Temperature Range
345
Watts
-55 to 150
°C
Static Electrical Characteristics
Min
Typ
Max
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 5mA)
600
-
-
VGE(TH)
Gate Threshold Voltage (VCE = VGE, IC = 500μA, Tj = 25°C)
3
4
5
Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 25°C)
1.6
2.15
2.5
Collector Emitter On Voltage (VGE = 15V, IC = 40A, Tj = 125°C)
-
-
2.8
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
-
-
80
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
-
-
2000
Gate-Emitter Leakage Current (VGE = ±20V)
-
-
100
VCE(ON)
ICES
IGES
Volts
μA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Unit
nA
052-6222 Rev D 3 - 2012
Symbol Characteristic / Test Conditions
Dynamic Characteristic
Symbol
APT40GT60BR
Characteristic
Test Conditions
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
SSOA
td(on)
tr
td(off)
tf
Min
Typ
Max
-
2190
-
-
220
-
-
130
-
-
8.0
-
VGE = 15V
-
200
-
VCE= 300V
-
12
-
IC = 40A
-
86
-
TJ = 150°C, RG = 5Ω , VGE = 15V, L
160
VGE = 0V, VCE = 25V
3
f = 1MHz
Gate Charge
Gate-Collector Charge
Switching Safe Operating Area
= 100μH, VCE= 600V
Current Rise Time
Turn-Off Delay Time
12
-
Inductive Switching (25°C)
-
36
-
VCC = 400V
-
124
-
-
55
-
RG = 5Ω
-
-
-
TJ = +25°C
-
945
-
VGE = 15V
Current Fall Time
IC = 40A
Eon1
Turn-On Switching Energy
4
Eon2
Turn-On Switching Energy
5
Eoff
Turn-Off Switching Energy 6
-
828
-
td(on)
Turn-On Delay Time
-
12
-
Inductive Switching (125°C)
-
33
-
Turn-Off Delay Time
VCC = 400V
-
165
-
Current Fall Time
VGE = 15V
-
58
-
Turn-On Switching Energy
4
IC = 40A
-
-
Eon2
Turn-On Switching Energy
RG = 5Ω
-
5
-
1342
-
Eoff
Turn-Off Switching Energy 6
-
1150
-
tr
td(off)
tf
Eon1
Current Rise Time
TJ = +125°C
pF
V
nC
A
-
Turn-On Delay Time
Unit
ns
μJ
ns
μJ
Thermal and Mechanical Characteristics
Symbol Characteristic / Test Conditions
Min
Typ
Max
Unit
RθJC
Junction to Case (IGBT)
-
-
0.36
RθJC
Junction to Case (DIODE)
-
-
N/A
WT
Package Weight
-
6.1
-
g
-
-
10
in·lbf
-
-
1.1
N·m
2500
-
-
Volts
°C/W
Torque
Terminals and Mounting Screws
VIsolation
RMS Voltage (50-60Hz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
052-6222 Rev D 3 - 2012
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages.
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to
z a the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance not including gate driver impedance.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
GE
15V
= 15V
TJ= 125°C
TJ= 25°C
TJ= 55°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (TJ = 25°C)
TJ= 25°C
TJ= 125°C
TJ= -55°C
IC = 40A
IC = 200A
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 80A
10V
9V
8V
7V
6V
I = 40A
C
T = 25°C
J
VCE = 120V
VCE = 300V
VCE = 480V
GATE CHARGE (nC)
FIGURE 4, Gate charge
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
11V
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (TJ = 25°C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
250μs PULSE
TEST<0.5 % DUTY
CYCLE
13V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
V
APT40GT60BR
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
IC = 80A
IC = 40A
IC = 20A
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
1.00
0.95
0.90
0.85
0.80
0.75
-.50 -.25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
TC, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
052-6222 Rev D 3 - 2012
1.05
IC, DC COLLECTOR CURRENT (A)
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
1.10
APT40GT60BR
VGE = 15V
VCE = 400V
TJ = 25°C, or 125°C
RG = 5Ω
L = 100μH
td(OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
Typical Performance Curves
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
VGE =15V,TJ=125°C
VGE =15V,TJ=25°C
VCE = 400V
RG = 5Ω
L = 100μH
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
RG = 5Ω, L = 100μH, VCE = 400V
tr, FALL TIME (ns)
tr, RISE TIME (ns)
RG = 5Ω, L = 100μH, VCE = 400V
TJ = 25°C, VGE = 15V
TJ = 25 or 125°C,VGE = 15V
TJ = 125°C, VGE = 15V
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
V
= 400V
CE
V
= +15V
GE
R = 5Ω
G
TJ = 125°C
TJ = 25°C
EOFF, TURN OFF ENERGY LOSS (μJ)
Eon2, TURN ON ENERGY LOSS (μJ)
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
V
= 400V
CE
V
= +15V
GE
T = 125°C
Eon2,80A
J
Eoff,80A
Eoff,40A
Eon2,40A
Eoff,20A
Eon2,20A
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
G
TJ = 125°C
TJ = 25°C
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (μJ)
SWITCHING ENERGY LOSSES (μJ)
052-6222 Rev D 3 - 2012
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
V
= 400V
CE
V
= +15V
GE
R = 5Ω
V
= 400V
CE
V
= +15V
GE
R = 5Ω
G
Eon2,80A
Eoff,80A
Eon2,40A
Eoff,40A
Eon2,20A
Eoff,20A
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
Typical Performance Curves
APT40GT60BR
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
Cies
Coes
Cres
VCE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
D = 0.9
0.7
0.5
Note:
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
0.3
t1
t2
t
0.1
0.05
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
SINGLE PULSE
.07172
.1434
.1451
Dissipated Powe r
(Watts )
.00157
.0040
0.1270
Z EXT are the external therma l
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling onl y
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 400V
CE
R = 1.0Ω
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
75°C
G
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
052-6222 Rev D 3 - 2012
T C (°C)
Z EXT
T J (°C)
FMAX, OPERATING FREQUENCY (kHz)
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT40GT60BR
10%
td(on)
Gate Voltage
APT30DQ60
TJ = 125°C
tr
Collector Current
90%
V CE
IC
V CC
10%
5%
5%
CollectorVoltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circui
t
Figure 22, Turn-on Switching Waveforms and Definitions
90%
TJ = 125°C
Gate Voltage
td(off )
tf
10%
0
Collector Current
CollectorVoltage
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 (B) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Collector
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
052-6222 Rev D 3 - 2012
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches
)
Similar pages