TYPICAL PERFORMANCE CURVES
APT30GN60BDQ2 APT30GN60BD_SDQ2(G)
APT30GN60SDQ2
APT30GN60BDQ2(G) APT30GN60SDQ2(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
(B)
TO
-2
D3PAK
47
(S)
C
G
G
• 600V Field Stop
•
•
•
•
Trench Gate: Low VCE(on)
Easy Paralleling
6µs Short Circuit Capability
175°C Rated
C
E
E
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT30GN60BD_SDQ2(G)
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
63
I C2
Continuous Collector Current @ TC = 110°C
37
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
90
Switching Safe Operating Area @ TJ = 150°C
90A @ 600V
Total Power Dissipation
Watts
203
Operating and Storage Junction Temperature Range
-55 to 175
°C
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
(VCE = VGE, I C = 430µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C)
I CES
I GES
RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
TYP
MAX
5.0
5.8
6.5
1.1
1.5
1.9
50
2
300
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
µA
TBD
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Volts
1.7
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Units
nA
Ω
7-2009
MIN
Rev B
Characteristic / Test Conditions
050-7617
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30GN60BD_SDQ2(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Qge
Qgc
SSOA
SCSOA
Total Gate Charge
1750
VGE = 0V, VCE = 25V
70
f = 1 MHz
50
Gate Charge
9.0
VGE = 15V
165
VCE = 300V
10
I C = 30A
Gate-Collector ("Miller ") Charge
TJ = 150°C, R G = 4.3Ω
Switching Safe Operating Area
VGE =
VCC = 360V, VGE = 15V,
TJ = 150°C, R G = 4.3Ω 7
tr
Current Rise Time
VCC = 400V
14
td(off)
Turn-off Delay Time
VGE = 15V
155
I C = 30A
55
RG = 4.3Ω 7
525
TJ = +25°C
565
Eon2
Turn-on Switching Energy
Turn-on Switching Energy (With Diode)
5
Eoff
Turn-off Switching Energy
td(on)
Turn-on Delay Time
Inductive Switching (125°C)
12
tr
Current Rise Time
VCC = 400V
14
td(off)
Turn-off Delay Time
VGE = 15V
180
I C = 30A
RG = 4.3Ω 7
75
555
TJ = +125°C
950
tf
6
44
Turn-on Switching Energy
Eon2
Turn-on Switching Energy (With Diode)
Eoff
Turn-off Switching Energy
ns
µJ
700
Current Fall Time
Eon1
nC
µs
12
Eon1
V
6
Inductive Switching (25°C)
4
pF
A
Turn-on Delay Time
Current Fall Time
UNIT
90
td(on)
tf
MAX
90
7,
15V, L = 100µH,VCE = 600V
Short Circuit Safe Operating Area
TYP
Capacitance
3
Gate-Emitter Charge
MIN
55
66
ns
µJ
895
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.74
RθJC
Junction to Case (DIODE)
.67
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
050-7617
Rev B 7-2009
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
APT30GN60BD_SDQ2(G)
100
90
V
GE
15V
= 15V
13V
12V
TJ = 125°C
40
TJ = 175°C
30
20
11V
60
10V
40
9V
20
8V
10
0
0
0
1
2
3
4
5
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
TJ = -55°C
70
TJ = 25°C
60
TJ = 125°C
50
TJ = 175°C
40
30
20
10
0
0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
IC = 60A
2.0
IC = 30A
IC = 15A
1.5
1.0
0.5
0
9
10 11 12 13 14 15 16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
8
1.10
1.00
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
J
VCE = 120V
12
VCE = 300V
10
VCE = 480V
8
6
4
2
0
20
40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.5
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.0
IC = 60A
2.5
2.0
IC = 30A
1.5
IC = 15A
1.0
0.5
0
0
25
50
75 100 125 150 175
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
1.30
1.20
I = 30A
C
T = 25°C
14
0
3
6
9
12
15
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
IC, DC COLLECTOR CURRENT(A)
IC, COLLECTOR CURRENT (A)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
80
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
90
7V
0
2
4
6
8
10
12
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
80
70
60
50
40
30
20
10
0
-50 -25
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
7-2009
TJ = 25°C
50
Rev B
TJ = -55°C
60
80
050-7617
70
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
80
APT30GN60BD_SDQ2(G)
250
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
16
14
VGE = 15V
12
10
8
6
4
VCE = 400V
T = 25°C, or =125°C
2 RJ = 4.3Ω
G
0
L = 100µH
VCE = 400V
RG = 4.3Ω
L = 100µH
100
RG = 4.3Ω, L = 100µH, VCE = 400V
RG = 4.3Ω, L = 100µH, VCE = 400V
80
tf, FALL TIME (ns)
tr, RISE TIME (ns)
50
60
40
30
20
TJ = 25 or 125°C,VGE = 15V
3000
60
TJ = 25°C, VGE = 15V
40
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1600
EOFF, TURN OFF ENERGY LOSS (µJ)
V
= 400V
CE
V
= +15V
GE
R = 4.3Ω
G
2500
TJ = 125°C, VGE = 15V
20
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
EON2, TURN ON ENERGY LOSS (µJ)
VGE =15V,TJ=25°C
100
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
0
TJ = 125°C
2000
1500
1000
500
TJ = 25°C
V
= 400V
CE
V
= +15V
GE
R = 4.3Ω
1400
TJ = 125°C
G
1200
1000
800
600
TJ = 25°C
400
200
0
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
3000
V
= 400V
CE
V
= +15V
GE
T = 125°C
J
5000
4000
Eon2,60A
Eoff,60A
3000
2000
Eon2,30A
1000
Eoff,30A
Eoff,15A
SWITCHING ENERGY LOSSES (µJ)
SWITCHING ENERGY LOSSES (µJ)
VGE =15V,TJ=125°C
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
10
Rev B 7-2009
150
0
10
50
050-7617
200
V
= 400V
CE
V
= +15V
GE
R = 4.3Ω
G
2500
Eon2,60A
2000
Eoff,60A
1500
1000
Eon2,30A
Eoff,30A
500
Eon2,15A
0
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
Eoff,15A
Eon2,15A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
3,000
APT30GN60BD_SDQ2(G)
100
IC, COLLECTOR CURRENT (A)
Cies
C, CAPACITANCE ( F)
1,000
P
500
100
Coes
50
Cres
90
80
70
60
50
40
30
20
10
10
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.70
D = 0.9
0.60
0.7
0.50
0.5
0.40
Note:
PDM
0.30
0.3
0.20
t1
t2
SINGLE PULSE
0.1
0.10
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
130
50
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
10
5
1
T = 125°C
J
T = 75°C
C
D = 50 %
= 400V
V
CE
R = 4.3Ω
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
G
10 15 20 25 30 35 40 45 50 55
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
Rev B
7-2009
5
050-7617
FMAX, OPERATING FREQUENCY (kHz)
ZθJC, THERMAL IMPEDANCE (°C/W)
0.80
APT30GN60BD_SDQ2(G)
10%
APT40DQ60
Gate Voltage
TJ = 125°C
td(on)
tr
IC
V CC
90%
Collector Current
V CE
5%
5%
10%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
td(off)
90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
050-7617
Rev B 7-2009
Figure 23, Turn-off Switching Waveforms and Definitions
TJ = 125°C
TYPICAL PERFORMANCE CURVES
APT30GN60BD_SDQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol
IF
(AV)
IF
(RMS)
IFSM
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT30GN60BD_SDQ2(G)
Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5)
40
RMS Forward Current (Square wave, 50% duty)
63
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
UNIT
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
Forward Voltage
VF
MIN
TYP
IF = 30A
1.85
IF = 60A
2.27
IF = 30A, TJ = 125°C
MAX
UNIT
Volts
1.5
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F
F
R
J
-
22
trr
Reverse Recovery Time
-
25
Qrr
Reverse Recovery Charge
-
35
-
3
-
160
ns
-
480
nC
-
6
-
85
ns
-
920
nC
-
20
Amps
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
IF = 40A, diF/dt = -200A/µs
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
Reverse Recovery Time
IF = 40A, diF/dt = -200A/µs
Reverse Recovery Charge
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
Reverse Recovery Time
IF = 40A, diF/dt = -1000A/µs
Reverse Recovery Charge
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
ns
nC
-
-
Amps
Amps
D = 0.9
0.60
0.50
0.7
0.40
0.5
Note:
0.30
PDM
0.3
0.20
t1
t2
t
0.1
SINGLE PULSE
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
7-2009
0
Rev B
0.10
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
050-7617
ZθJC, THERMAL IMPEDANCE (°C/W)
0.70
APT30GN60BD_SDQ2(G)
180
100
80
60
TJ = 125°C
40
TJ = 175°C
20
TJ = 25°C
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
120
0.5
1
1.5
2
2.5
3
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 25. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
1400
T = 125°C
J
V = 400V
R
1200
80A
1000
800
40A
600
400
20A
200
0
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 27. Reverse Recovery Charge vs. Current Rate of Change
40
25
T = 125°C
J
V = 400V
R
80A
20
15
40A
10
20A
5
0.6
trr
0.4
Duty cycle = 0.5
T = 175°C
J
70
60
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
IRRM
0.8
50
40
30
Qrr
20
10
0
200
180
CJ, JUNCTION CAPACITANCE
(pF)
60
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Current vs. Current Rate of Change
trr
1.0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 29. Dynamic Parameters vs. Junction Temperature
Rev B 7-2009
80
0
Qrr
0.2
050-7617
20A
100
80
1.2
160
140
120
100
80
60
40
20
0
40A
120
0
200
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Reverse Recovery Time vs. Current Rate of Change
1.4
0.0
140
0
IRRM, REVERSE RECOVERY CURRENT
(A)
0
R
80A
20
TJ = -55°C
0
T = 125°C
J
V = 400V
160
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 31. Junction Capacitance vs. Reverse Voltage
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 30. Maximum Average Forward Current vs. CaseTemperature
TYPICAL PERFORMANCE CURVES
APT30GN60BD_SDQ2(G)
Vr
diF /dt Adjust
+18V
APT40GT60BR
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 32. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 33, Diode Reverse Recovery Waveform and Definitions
3
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
Collector
(Cathode)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Collector (Cathode)
(Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Collector (Cathode)
Emitter (Anode)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Emitter (Anode)
Collector (Cathode)
Gate
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Collector)
and Leads are Plated
7-2009
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
Rev B
4.50 (.177) Max.
050-7617
0.46 (.018)
0.56 (.022) {3 Plcs}