APT30GS60BRDL(G)_C.pdf

APT30GS60BRDL(G)
600V, 30A, VCE(ON) = 2.8V Typical
Resonant Mode Combi IGBT®
TO
The Thunderbolt HS™ IGBT used in this resonant mode combi is based on thin wafer non-punch through
(NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower
turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz,
approaching power MOSFET performance but lower cost.
-24
7
An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it
easy to parallel Thunderbolts HS™ IGBT's. Controlled slew rates result in very good noise and oscillation
immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor
drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi
versions are packaged with a high speed, soft recovery DL series diode.
Features
G
Single die
IGBT with
separate DL
C
C
E
G
E
Typical Applications
• Fast Switching with low EMI
• Tight parameter distribution
• ZVS Phase Shifted Bridge
• Very Low EOFF for Maximum Efficiency
• Easy paralleling
• Resonant Mode Switching
• Short circuit rated
• Low Forward Diode Voltage (VF)
• Phase Shifted Bridge
• Low Gate Charge
• Ultrasoft Recovery Diode
• Welding
• RoHS Compliant
• Induction heating
• High Frequency SMPS
Absolute Maximum Ratings
Symbol
Parameter
Rating
I C1
Continuous Collector Current TC = @ 25°C
54
I C2
Continuous Collector Current TC = @ 100°C
30
I CM
Pulsed Collector Current 1
113
VGE
Gate-Emitter Voltage
Unit
A
±30V
SSOA
Switching Safe Operating Area
113
tSC
Short Circut Withstand Time 3
10
V
μs
Thermal and Mechanical Characteristics
Parameter
Total Power Dissipation TC = @ 25°C
IGBT
Min
Typ
Max
Unit
-
-
250
W
-
-
0.50
RθJC
Junction to Case Thermal Resistance
RθCS
Case to Sink Thermal Resistance, Flat Greased Surface
-
0.11
-
TJ, TSTG
Operating and Storage Junction Temperature Range
-55
-
150
-
-
300
-
0.22
-
oz
-
5.9
-
g
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Diode
1.0
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
°C/W
°C
052-6353 Rev C 3-2012
Symbol
PD
Static Characteristics
Symbol
VBR(CES)
ΔVBR(CES)/ΔTJ
TJ = 25°C unless otherwise specified
Parameter
Collector-Emitter Breakdown Voltage
Breakdown Voltage Temperature Coeff
Collector-Emitter On Voltage 4
VGE(th)
Gate-Emitter Threshold Voltage
ΔVGE(th)/ΔTJ
Threshold Voltage Temp Coeff
ICES
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Input Capacitance
Output Capacitance
Cres
Typ
Max
Unit
600
-
-
V
Reference to 25°C, IC = 250μA
-
0.60
-
V/°C
TJ = 25°C
-
2.8
3.15
TJ = 125°C
-
3.25
-
3
4
5
VGE = VCE, IC = 1mA
VCE = 600V,
VGE = 0V
-
6.7
-
-
-
50
TJ = 125°C
-
-
1000
-
-
±100
nA
Min
Typ
Max
Unit
-
18
-
S
VGE = ±20V
-
1600
-
-
140
-
Reverse Transfer Capacitance
-
90
-
Co(cr)
Reverse Transfer Capacitance
Charge Related 5
-
130
-
Co(er)
Reverse Transfer Capacitance
Current Related 6
Gate-Emitter Charge
Ggc
Gate-Collector Charge
td(on)
tr
td(off )
tf
VGE = 0V, VCE = 25V
f = 1MHz
Turn-On Delay Time
Rise Time
Inductive Switching IGBT and
Diode:
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
8
Eon2
Turn-On Switching Energy
9
Eoff
Turn-Off Switching Energy 10
tr
td(off )
tf
Eon1
VGE = 0V
VCE = 0 to 400V
VGE = 0 to 15V
IC = 30A, VCE = 300V
Eon1
td(on)
mV/°C
μA
pF
Total Gate Charge
Qge
V
TJ = 25°C
Test Conditions
VCE = 50V, IC = 30A
Forward Transconductance
Coes
Qg
052-6353 Rev C 3-2012
Parameter
Cies
Min
TJ = 25°C unless otherwise specified
Dynamic Characteristics
Symbol
gfs
Test Conditions
VGE = 0V, IC = 250μA
VGE = 15V
IC = 30A
VCE(ON)
APT30GS60BRDL(G)
TJ = 25°C, VCC = 400V,
IC = 30A
RG = 9.1Ω 7, VGG = 15V
Turn-On Delay Time
Inductive Switching IGBT and
Diode:
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
8
Eon2
Turn-On Switching Energy
9
Eoff
Turn-Off Switching Energy 10
TJ = 125°C, VCC = 400V,
IC = 30A
RG = 9.1Ω 7, VGG = 15V
95
-
145
-
-
12
-
-
65
-
-
16
-
-
29
-
-
360
-
-
27
-
-
TBD
-
-
800
-
-
570
-
-
16
-
-
29
-
-
390
-
-
22
-
-
TBD
-
-
1185
-
-
695
-
nC
ns
μJ
ns
μJ
TYPICAL PERFORMANCE CURVES
APT30GS60BRDL(G)
120
120
VGE = 15V
T = 125°C
J
IC, COLLECTOR CURRENT (A)
80
TJ = 25°C
60
40
TJ = 125°C
12V
11V
80
10V
60
9V
40
8V
20
20
6V
TJ = 150°C
0
0
0
1
2
3
4
5
6
7
8
VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)
0
5
10
15
20
25
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics
120
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
FIGURE 2, Output Characteristics
6
250μs PULSE
TEST<0.5 % DUTY
CYCLE
100
TJ = 125°C
TJ = 25°C
80
TJ = -55°C
60
40
20
0
0
2
4
6
8
10
12
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
IC = 100A
4
50A
IICC==30A
3
IC = 25A
I = 15A
1
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
16
14
IC = 30A
3
IC = 15A
2
1
VGE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
0
VCE = 120V
12
VCE = 300V
10
8
VCE = 480V
6
4
2
0
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Junction Temperature
25
0
2000
20
40
60
80 100 120
GATE CHARGE (nC)
FIGURE 6, Gate Charge
140
160
60
Cies
1000
100
Coes
Cres
0
100
200
300
400
500
600
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
IC, DC COLLECTOR CURRENT(A)
50
P
C, CAPACITANCE ( F)
C
2
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage
IC = 60A
4
10
TJ = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 60A
0
14
5
0
30
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
052-6353 Rev C 3-2012
IC, COLLECTOR CURRENT (A)
VGE = 13 & 15V
100
100
TYPICAL PERFORMANCE CURVES
APT30GS60BRDL(G)
500
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
25
20
VGE = 15V
15
10
5 VCE = 400V
TJ = 25°C, TJ =125°C
0
RG = 9.1Ω
L = 100μH
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
VGE =15V,TJ=25°C
200
100
VCE = 400V
RG = 9.1Ω
L = 100μH
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
60
RG = 9.1Ω, L = 100μH, VCE = 400V
60
RG = 9.1Ω, L = 100μH, VCE = 400V
50
TJ = 25 or 125°C,VGE = 15V
tf, FALL TIME (ns)
50
tr, RISE TIME (ns)
VGE =15V,TJ=125°C
300
0
0
70
400
40
30
40
30
TJ = 125°C, VGE = 15V
20
20
TJ = 25°C, VGE = 15V
10
10
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
G
3000
TJ = 125°C,VGE =15V
2000
1000
TJ = 25°C,VGE =15V
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
V = 400V
CE
V = +15V
GE
R = 9.1Ω
1400
G
1200
TJ = 125°C, VGE = 15V
1000
800
600
400
200
0
0
5
0
1600
V = 400V
CE
V = +15V
GE
R = 9.1Ω
EOFF, TURN OFF ENERGY LOSS (μJ)
EON2, TURN ON ENERGY LOSS (μJ)
0
0
TJ = 25°C, VGE = 15V
0
10
20
30
40
50
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
4
V = 400V
CE
V = +15V
GE
T = 125°C
V = 400V
CE
V = +15V
GE
R = 9.1Ω
Eon2,60A
3
Eoff,60A
2
Eon2,30A
1
Eoff,30A
Eoff,15A
Eon2 15A
,
0
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (mJ)
SWITCHING ENERGY LOSSES (mJ)
052-6353 Rev C 3-2012
J
4
G
3
Eon2,60A
2
Eoff,60A
Eon2,30A
1
Eoff,30A
Eon2,15A
0
Eoff,15A
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
APT30GS60BRDL(G)
200
200
100
100
ICM
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
ICM
10
VCE(on)
13μs
100μs
1ms
1
10ms
100ms
10
VCE(on)
100μs
1ms
DC line
Scaling for Different Case & Junction
Temperatures:
IC = IC(T = 25°C)*(TJ - TC)/125
TJ = 125°C
TC = 75°C
1
10ms
100ms
TJ = 150°C
TC = 25°C
1
DC line
0.1
13μs
C
0.1
10
100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
1
10
100
800
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 18, Maximum Forward Safe Operating Area
0.60
0.9
0.40
0.7
0.30
0.5
0.20
Note:
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.50
0.3
t1
t2
0.10
SINGLE PULSE
0.1
0.05
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
120
T = 75°C
0.0838
0.207
0.209
Dissipated Powe r
(Watts )
0.00245
0.00548
0.165
Z EXT are the external therma l
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling onl y
the case to junction.
Figure 20, Transient Thermal Impedance Model
T = 100°C
C
10
T = 125°C
J
T = 75°C
C
D = 50 %
V = 400V
CE
R = 9.1Ω
G
1
F max = min (f max, f max2)
0.05
f max1 =
t d(on) + tr + td(off) + tf
f max2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
0
10
20
30
40
50
IC, COLLECTOR CURRENT (A)
Figure 21, Operating Frequency vs Collector Current
052-6353 Rev C 3-2012
T C (°C)
Z EXT
T J (°C )
FMAX, OPERATING FREQUENCY (kHz)
C
APT30GS60BRDL(G)
10%
Gate Voltage
APT30DL60
TJ = 125°C
td(on)
Collector Current
IC
V CC
90%
V CE
tr
5%
5%
10%
Collector Voltage
Switching Energy
A
D.U.T.
Figure 23, Turn-on Switching Waveforms and Definitions
Figure 22, Inductive Switching Test Circuit
Gate Voltage
TJ = 125°C
90%
td(off )
Collector Voltage
90%
tf
10%
0
Collector Current
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
FOOT NOTE:
1
3
4
5
6
052-6353 Rev C 3-2012
7
8
9
10
Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
Short circuit time: VGE = 15V, VCC ≤ 600V, TJ ≤ 150°C
Pulse test: Pulse width < 380μs, duty cycle < 2%
Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES.
Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
VCE less than V(BR)CES, use this equation: Co(er) = -1.40E-7/VDS^2 + 1.47E-8/VDS + 5.95E-11.
RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
DYNAMIC CHARACTERISTICS
APT30GS60BRDL(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
IF(AV)
IF(RMS)
IFSM
APT30GS60BRDL(G)
Characteristic / Test Conditions
Maximum Average Forward Current (TC = 126°C, Duty Cycle = 0.5)
30
RMS Forward Current (Square wave, 50% duty)
51
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
UNIT
Amps
320
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
Characteristic / Test Conditions
MIN
Forward Voltage
TYP
MAX
IF = 30A
1.25
1.6
IF = 60A
2.0
IF = 30A, TJ = 125°C
UNIT
Volts
1.25
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C
F
F
R
J
-
64
trr
Reverse Recovery Time
-
317
Qrr
Reverse Recovery Charge
-
962
-
7
-
561
ns
-
2244
nC
-
9
-
264
ns
-
3191
nC
-
26
Amps
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF =30A, diF/dt = -200A/μs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A, diF/dt = -1000A/μs
VR = 400V, TC = 125°C
Maximum Reverse Recovery Current
ZθJC, THERMAL IMPEDANCE (°C/W)
nC
-
-
Amps
Amps
Note:
P DM
IRRM
VR = 400V, TC = 25°C
t1
t2
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
T J (°C)
T C (°C)
.112
.437
.450
.0005
.0016
0.263
Dissipated Powe r
(Watts )
Z EXT
IRRM
IF = 30A, diF/dt = -200A/μs
ns
Z EXT are the external therma l
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling onl y
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
052-6353 Rev C 3-2012
Symbol
TYPICAL PERFORMANCE CURVES
800
100
TJ= 125°C
TJ= 150°C
TJ= 55°C
70
60
TJ= 25°C
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5 3.0
VF, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
4500
T = 125°C
60A
J
V = 400V
R
4000
3500
30A
3000
15A
2500
2000
1500
1000
500
0
400
15A
300
200
100
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
32
28
T = 125°C
J
V = 400V
60A
R
30A
24
15A
20
16
12
8
4
0
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
IRRM
0.8
tRR
0.6
QRR
0.4
0
Duty cycle = 0.5
TJ = 126°C
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
300
CJ, JUNCTION CAPACITANCE (pF)
30A
500
1
0.2
052-6353 Rev C 3-2012
600
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
0
200
400
600
800
1000
-diF/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
R
60A
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT (A)
80
T = 125°C
J
V = 400V
700
trr, COLLECTOR CURRENT (A)
90
Qrr, REVERSE RECOVERY CHARGE
(nC)
APT30GS60BRDL(G)
250
200
150
100
50
0
1
10
100
400
VR, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
Vr
diF /dt Adjus t
+18V
0V
D.U.T.
trr/Q rr
Wavefor m
CURRENT
TRANSFORMER
Figure 9. Diode Test Circui
1
I F - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
I RRM - Maximum Reverse Recovery Current
4
e diode
trr - Revers e R ecovery Time, measured from zero crossing wher
current goes from positive to negative, to the point at which the straight
line through I RRM and 0.25 I RRM passes through zero .
t
1
4
6
Zer o
.
5
5
Q rr - Area Under the Curve Defined by I
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of t
3
2
0.25 I RRM
Slope = di
M/dt
and trr.
RRM
rr.
Figure 10, Diode Reverse Recovery Waveform and Definition
s
TO-247 (B) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Collector
(Cathode)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Collector (Cathode)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches
)
052-6353 Rev C 3-2012
Emitter (Anode)
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