TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) 600V APT30GT60BRDQ2 APT30GT60BRDQ2G* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT® TO -2 The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 100KHz • Low Tail Current • Ultra Low Leakage Current G C 47 E C • RBSOA and SCSOA Rated G E MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT30GT60BRDQ2(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 64 I C2 Continuous Collector Current @ TC = 110°C 30 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 110 Switching Safe Operating Area @ TJ = 150°C 110A @ 600V Total Power Dissipation Watts 250 Operating and Storage Junction Temperature Range -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250µA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES (VCE = VGE, I C = 700µA, Tj = 25°C) 3 TYP 4 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) 1.6 2.0 Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) 2.8 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) MAX 5 Volts 2.5 50 1000 ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Units µA nA 6-2008 MIN Rev B Characteristic / Test Conditions 052-6282 Symbol DYNAMIC CHARACTERISTICS Symbol APT30GT60BRDQ2(G) Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Total Gate Charge MIN TYP Capacitance 1600 VGE = 0V, VCE = 25V 150 92 Test Conditions Characteristic f = 1 MHz Gate Charge 3 Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge SSOA Switching Safe Operating Area V VGE = 15V 7.5 VCE = 300V 145 I C = 30A 10 TJ = 150°C, R G = 10Ω, VGE = 60 Current Rise Time VCC = 400V 12 td(off) Turn-off Delay Time VGE = 15V 20 225 80 525 605 Inductive Switching (125°C) VCC = 400V 600 I C = 30A Current Fall Time Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy Turn-on Delay Time tr Current Rise Time td(off) tf Eon1 RG = 10Ω 4 Eon2 td(on) TJ = +25°C 5 6 VGE = 15V Turn-off Delay Time I C = 30A Current Fall Time Turn-on Switching Energy A 110 Inductive Switching (25°C) tr Turn-on Switching Energy nC 15V, L = 100µH,VCE = 600V Turn-on Delay Time Eon1 UNIT pF td(on) tf MAX RG = 10Ω 44 Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy 55 TJ = +125°C 6 ns µJ 12 20 245 100 570 965 TYP ns µJ THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case (IGBT) .50 RθJC Junction to Case (DIODE) 5.9 .67 WT Package Weight MAX UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 052-6282 Rev B 6-2008 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES V GE = 15V 15 &13V TJ = -55°C 80 70 TJ = 25°C 60 50 TJ = 125°C 40 30 20 10 FIGURE 1, Output Characteristics(TJ = 25°C) 7V 20 60 50 40 30 TJ = 125°C 20 TJ = 25°C 0 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125°C) 14 J VCE = 120V 12 VCE = 300V 10 8 VCE = 480V 6 4 2 0 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 30A C T = 25°C 0 IC = 60A 3.5 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 3.0 IC = 30A 2.5 2.0 1.5 IC = 15A 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 3.5 2.5 1.0 0.5 0 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 25 50 75 100 125 150 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 80 0.95 IC = 15A 1.5 1.10 1.00 IC = 30A 2.0 90 1.05 IC = 60A 3.0 1.15 IC, DC COLLECTOR CURRENT(A) 6 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4.0 VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4.5 20 0 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 6-2008 IC, COLLECTOR CURRENT (A) 70 TJ = -55°C 80 10 8V 40 Rev B 250µs PULSE TEST<0.5 % DUTY CYCLE 90 0 9V 60 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 100 10V 80 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 11V 100 6V 0 120 052-6282 IC, COLLECTOR CURRENT (A) 90 APT30GT60BRDQ2(G) 140 IC, COLLECTOR CURRENT (A) 100 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 14 VGE = 15V 12 10 8 6 4 VCE = 400V T = 25°C, or 125°C 2 RJ = 10Ω G 0 APT30GT60BRDQ2(G) 300 16 L = 100µH 250 VGE =15V,TJ=25°C 150 100 50 VCE = 400V RG = 10Ω 0 0 VGE =15V,TJ=125°C 200 L = 100µH 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 60 160 RG = 10Ω, L = 100µH, VCE = 400V 0 RG = 10Ω, L = 100µH, VCE = 400V 140 50 TJ = 125°C, VGE = 15V tf, FALL TIME (ns) tr, RISE TIME (ns) 120 40 30 20 G TJ = 125°C 1500 1000 500 TJ = 25°C G 1500 TJ = 125°C 1000 TJ = 25°C 500 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4500 3000 4000 V = 400V CE V = +15V GE T = 125°C Eon2,60A J 3500 3000 Eoff,60A 1500 Eon2,30A Eoff,30A 1000 Eoff,15A 500 0 Eon2,15A 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) V = 400V CE V = +15V GE R = 10Ω 0 0 6-2008 Rev B 052-6282 2000 V = 400V CE V = +15V GE R = 10Ω 2000 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) 2500 TJ = 25°C, VGE = 15V 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 60 20 0 80 40 TJ = 25 or 125°C,VGE = 15V 10 100 2500 V = 400V CE V = +15V GE R = 10Ω Eon2,60A G 2000 1500 Eoff,60A 1000 Eon2,30A Eoff,15A 500 0 Eoff,30A Eon2,15A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES IC, COLLECTOR CURRENT (A) Cies P C, CAPACITANCE ( F) 1,000 500 Coes 100 APT30GT60BRDQ2(G) 120 3,000 Cres 50 100 80 60 40 20 10 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.50 D = 0.9 0.40 0.7 0.30 0.5 0.20 Note: PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.60 0.3 t1 t2 0.10 0 t 0.1 0.05 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.00245 0.207 0.00548 0.209 0.165 Case temperature. (°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL Fmax = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf 10 5 1 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 10Ω fmax2 = Pdiss - Pcond Eon2 + Eoff Pdiss = TJ - TC RθJC G 5 15 25 35 45 55 65 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 6-2008 0.0838 50 Rev B Power (watts) RC MODEL 052-6282 Junction temp. (°C) FMAX, OPERATING FREQUENCY (kHz) 140 APT30GT60BRDQ2(G) Gate Voltage 10% APT40DQ60 TJ = 125°C td(on) IC V CC 90% V CE Collector Current tr 5% 10% 5% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure21,InductiveSwitchingTestCircuit 90% td(off) Gate Voltage tf 90% Collector Voltage 10% 0 Collector Current Switching Energy 052-6282 Rev B 6-2008 Figure 23, Turn-off Switching Waveforms and Definitions TJ = 125°C TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. APT30GT60BRDQ2(G) UNIT Characteristic / Test Conditions IF(AV) IF(RMS) Maximum Average Forward Current (TC = 111°C, Duty Cycle = 0.5) 40 RMS Forward Current (Square wave, 50% duty) 63 Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) IFSM Amps 320 STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions VF MIN TYP IF = 30A 1.85 Forward Voltage IF = 60A 2.24 IF = 30A, TJ = 125°C 1.48 MIN TYP MAX UNIT Volts DYNAMIC CHARACTERISTICS Characteristic Symbol Test Conditions MAX UNIT trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C F F R J - 22 trr Reverse Recovery Time - 25 Qrr Reverse Recovery Charge - 35 - 3 - 160 ns - 480 nC - 6 - 85 ns - 920 nC - 20 Amps IRRM IF = 40A, diF/dt = -200A/µs VR = 400V, TC = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 40A, diF/dt = -200A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 40A, diF/dt = -1000A/µs VR = 400V, TC = 125°C Maximum Reverse Recovery Current ns nC - - Amps Amps D = 0.9 0.60 0.50 0.7 0.40 0.5 Note: 0.30 0.3 0.20 t 0.1 0.05 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0.289 0.00448 0.381 0.120 Power (watts) 6-2008 RC MODEL Junction temp (°C) Rev B 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE Case temperature (°C) FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL 052-6282 0 t1 t2 0.10 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.70 100 80 60 TJ = 125°C 40 TJ = 175°C 20 TJ = 25°C IRRM, REVERSE RECOVERY CURRENT (A) 80A 1000 40A 600 400 20A 200 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 27. Reverse Recovery Charge vs. Current Rate of Change trr IRRM 0.8 trr 0.4 T = 125°C J V = 400V R 80A 20 15 40A 10 20A 5 Duty cycle = 0.5 T = 175°C J 50 40 30 20 Qrr 10 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 29. Dynamic Parameters vs. Junction Temperature 0 0 75 100 125 150 175 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature 200 180 160 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 1 CJ, JUNCTION CAPACITANCE (pF) 25 60 0.2 40 70 Qrr 1.0 0 60 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 28. Reverse Recovery Current vs. Current Rate of Change IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) 6-2008 Rev B 052-6282 80 80 1.2 0.0 20A 100 0 1.4 40A 120 Qrr, REVERSE RECOVERY CHARGE (nC) R 800 140 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 26. Reverse Recovery Time vs. Current Rate of Change T = 125°C J V = 400V 1200 R 80A 0 0 0 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 1400 T = 125°C J V = 400V 160 20 TJ = -55°C 0.6 APT30GT60BRDQ2(G) 180 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 120 25 50 TYPICAL PERFORMANCE CURVES APT30GT60BRDQ2(G) Vr diF /dt Adjust +18V APT6017LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure32.DiodeTestCircuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 4 Zero 5 3 0.25IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure33,DiodeReverseRecoveryWaveformandDefinitions TO-247PackageOutline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) Collector (Cathode) 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 2.21 (.087) 2.59 (.102) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector (Cathode) Emitter (Anode) 6-2008 19.81 (.780) 20.32 (.800) Rev B 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 052-6282 5 1