APT30M70BVFR(G)_A.pdf

APT30M70BVFR(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
300V
POWER MOS V ®
48A 0.070Ω
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Fast Recovery Body Diode
TO-247
• 100% Avalanche Tested
D
FREDFET
• Lower Leakage
• Popular TO-247 Package
G
• Faster Switching
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
APT30M70BVFR(G)
Parameter
300
Drain-Source Voltage
Volts
48
Continuous Drain Current @ TC = 25°C
1
UNIT
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
370
Watts
Linear Derating Factor
2.96
W/°C
VGSM
PD
TJ,TSTG
192
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
48
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
Volts
48
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
(VGS = 10V, 0.5 ID[Cont.])
MAX
0.070
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
APT Website - http://www.advancedpower.com
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
F-33700 Merignac - France
Phone: (33) 5 57 92 15 15
FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
050-5548 Rev A
Symbol
APT30M70BVFR(G)
APT30M70BVFR
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
MAX
Ciss
Input Capacitance
VGS = 0V
4890
5870
Coss
Output Capacitance
VDS = 25V
882
1235
Crss
Reverse Transfer Capacitance
f = 1 MHz
277
415
VGS = 10V
152
225
VDD = 0.5 VDSS
ID = ID [Cont.] @ 25°C
35
66
52
99
VGS = 15V
14
28
VDD = 0.5 VDSS
21
42
ID = ID [Cont.] @ 25°C
57
85
RG = 1.6Ω
10
20
TYP
MAX
Qg
Total Gate Charge
3
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
t d(on)
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
Fall Time
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
48
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
Peak Diode Recovery dv/dt
dt
192
(Body Diode)
(VGS = 0V, IS = -ID [Cont.])
5
UNIT
Amps
1.3
Volts
5
V/ns
t rr
Reverse Recovery Time
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
225
Tj = 125°C
400
Q rr
Reverse Recovery Charge
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
1.0
Tj = 125°C
4.2
IRRM
Peak Recovery Current
(IS = -ID [Cont.], di/dt = 100A/µs)
Tj = 25°C
10
Tj = 125°C
20
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
TYP
MAX
0.34
40
VR = 200V.
D=0.5
0.05
0.1
0.05
0.01
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5548 Rev A
0.4
0.2
0.01
0.005
0.001
10-5
t1
t2
SINGLE PULSE
10-4
°C/W
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 1.13mH, R = 25Ω, Peak I = 48A
j
G
L
5 I ≤ -I [Cont.], di/ = 100A/µs, V
S
D
DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω,
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT30M70BVFR(G)
100
100
VGS=15V
6V
80
5.5V
60
40
5V
20
4.5V
ID, DRAIN CURRENT (AMPERES)
VGS=10V
80
60
5.5V
40
5V
20
4.5V
4V
4V
0
0
ID, DRAIN CURRENT (AMPERES)
TJ = -55°C
TJ = +25°C
80
TJ = +125°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
40
TJ = +125°C
20
TJ = +25°C
TJ = -55°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
50
40
30
20
10
0
0
2
4
6
8
10
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
30
60
90
120
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
100
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
25
1.3
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.2
1.1
VGS=10V
VGS=20V
1.0
0.9
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.20
1.15
1.10
1.05
1.00
0.95
0.90
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-50
1.2
2.5
I = 0.5 I [Cont.]
D
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
6V
VGS=7V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5548 Rev A
ID, DRAIN CURRENT (AMPERES)
VGS=7V, 10V & 15V
APT30M70BVFR(G)
200
OPERATION HERE
LIMITED BY RDS (ON)
100
10,000
100µS
Ciss
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
15,000
10µS
1mS
10
5
10mS
1
100mS
DC
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
.1
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I = I [Cont.]
D
VDS=60V
VDS=150V
12
VDS=240V
8
4
0
1,000
Crss
500
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
16
Coss
100
1
5
10
50 100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
5,000
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
50
TJ =+25°C
10
5
1
.5
.1
0
0.4
0.8
1.2
1.6
2.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 SAC: Tin, Silver, Copper
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
050-5548 Rev A
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
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