APT30M70BVFR(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 300V POWER MOS V ® 48A 0.070Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode TO-247 • 100% Avalanche Tested D FREDFET • Lower Leakage • Popular TO-247 Package G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. APT30M70BVFR(G) Parameter 300 Drain-Source Voltage Volts 48 Continuous Drain Current @ TC = 25°C 1 UNIT Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 370 Watts Linear Derating Factor 2.96 W/°C VGSM PD TJ,TSTG 192 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 48 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 300 Volts 48 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 TYP (VGS = 10V, 0.5 ID[Cont.]) MAX 0.070 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA APT Website - http://www.advancedpower.com 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord 050-5548 Rev A Symbol APT30M70BVFR(G) APT30M70BVFR DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 4890 5870 Coss Output Capacitance VDS = 25V 882 1235 Crss Reverse Transfer Capacitance f = 1 MHz 277 415 VGS = 10V 152 225 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 35 66 52 99 VGS = 15V 14 28 VDD = 0.5 VDSS 21 42 ID = ID [Cont.] @ 25°C 57 85 RG = 1.6Ω 10 20 TYP MAX Qg Total Gate Charge 3 Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 48 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ Peak Diode Recovery dv/dt dt 192 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 225 Tj = 125°C 400 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 1.0 Tj = 125°C 4.2 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 10 Tj = 125°C 20 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% TYP MAX 0.34 40 VR = 200V. D=0.5 0.05 0.1 0.05 0.01 Note: 0.02 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-5548 Rev A 0.4 0.2 0.01 0.005 0.001 10-5 t1 t2 SINGLE PULSE 10-4 °C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25°C, L = 1.13mH, R = 25Ω, Peak I = 48A j G L 5 I ≤ -I [Cont.], di/ = 100A/µs, V S D DD ≤ VDSS, Tj ≤ 150°C, RG = 2.0Ω, dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT30M70BVFR(G) 100 100 VGS=15V 6V 80 5.5V 60 40 5V 20 4.5V ID, DRAIN CURRENT (AMPERES) VGS=10V 80 60 5.5V 40 5V 20 4.5V 4V 4V 0 0 ID, DRAIN CURRENT (AMPERES) TJ = -55°C TJ = +25°C 80 TJ = +125°C VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 60 40 TJ = +125°C 20 TJ = +25°C TJ = -55°C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 30 60 90 120 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 1.3 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.2 1.1 VGS=10V VGS=20V 1.0 0.9 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.20 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 6V VGS=7V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5548 Rev A ID, DRAIN CURRENT (AMPERES) VGS=7V, 10V & 15V APT30M70BVFR(G) 200 OPERATION HERE LIMITED BY RDS (ON) 100 10,000 100µS Ciss 50 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 15,000 10µS 1mS 10 5 10mS 1 100mS DC TC =+25°C TJ =+150°C SINGLE PULSE .5 .1 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) I = I [Cont.] D VDS=60V VDS=150V 12 VDS=240V 8 4 0 1,000 Crss 500 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 16 Coss 100 1 5 10 50 100 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 5,000 0 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 200 100 TJ =+150°C 50 TJ =+25°C 10 5 1 .5 .1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-5548 Rev A 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Drain Source